Results 41 to 50 of about 30,611 (305)

ALD grown zinc oxide with controllable electrical properties

, 2012
The paper presents results for zinc oxide films grown at low temperature regime by Atomic Layer Deposition (ALD). We discuss electrical properties of such films and show that low temperature deposition results in oxygen-rich ZnO layers in which free ...
Gieraltowska, S., Godlewski, M., Guziewicz, E., Jablonski, A., Jakiela, R., Krajewski, T. A., Krawczyk, M., Lisowski, W., Luka, G., Sobczak, J. W., Stonert, A., Wachnicki, L.   +11 more
core   +1 more source

Deterministic Detection of Single Ion Implantation

Advanced Engineering Materials, EarlyView.
Focused ion beam implantation with high detection efficiencies will enable the rapid and scalable fabrication of advanced spin‐based technologies such as qubits. This work presents the detection efficiencies of a wide range of ions implanted into solid‐state hosts, with efficiencies of >90% recorded for ion species and substrate combinations of ...
Mason Adshead, Lok Kan Wan, Maddison Coke, Janet Jacobs, Nicholas F. L. Collins, Mark C. Rosamond, Richard J. Curry   +6 more
wiley   +1 more source

High‐Performance Graphene‐Dielectric Interface by UV‐Assisted Atomic Layer Deposition for Graphene Field Effect Transistor

Advanced Electronic Materials, 2023
The deposition of high‐quality dielectric films on graphene surfaces is crucial in fabricating high‐performance graphene‐based electronics. In this study, the first application of UV‐assisted atomic layer deposition (UV‐ALD) to graphene surfaces and the ...
Geonwoo Park, Dohyun Go, Sungchan Jo, Tae Hoon Lee, Jeong Woo Shin, Jihwan An   +5 more
doaj   +1 more source

Investigation of the initial deposition steps and the interfacial layer of Atomic Layer Deposited (ALD) Al2O3 on Si [PDF]

Applied Surface Science, 2019
During the first stages of Atomic Layer Deposition (ALD) of Al 2 O 3 on silicon (Si), the substrate nature affects the surface chemistry, leading to an initial island growth mode. Furthermore, an interfacial zone develops between the Si surface and the dielectric, thus damaging the physical properties of the deposited structure. In this work, these two
Gakis, Giorgos, Vahlas, Constantin, Vergnes, Hugues, Dourdain, Sandrine, Tison, Yann, Martinez, Hervé, Bour, Jerôme, Ruch, David, Boudouvis, Andreas, Caussat, Brigitte, Scheid, Emmanuel   +10 more
openaire   +4 more sources

Understanding and Tuning Mobile Interfaces in Ferroelectric Hf0.5Zr0.5O2 Thin Films in Relation to Microstructure

Advanced Functional Materials, EarlyView.
Ferroelectricity in thin HfO2‐based films offers great possibilities for next‐generation neuromorphic memory devices. There, the response to subcoercive voltage signals is driven by the movement of mobile interfaces and their interaction with crystal defects – a yet rather unexplored aspect, which we shed light on and gain new insights into the complex
Maximilian T. Becker, Yoonsang Park, Kihong Kim, Ji Soo Kim, Nives Strkalj, Atif Jan, Giuliana Di Martino, Benson K. Tsai, Haiyan Wang, Ping Lu, Duk‐Hyun Choe, Judith L. MacManus‐Driscoll   +11 more
wiley   +1 more source

Atomic‐Scale Light Coupling Control in Ultrathin Photonic Membranes

Advanced Functional Materials, EarlyView.
Ultrathin photonic nanomembranes provide atomic‐scale control over the coupling between incident light and high‐Q photonic modes, enabling angstrom‐level resonance tuning and strong field confinement. When integrated with TMD monolayers, they further yield enhanced light–matter interactions, offering a versatile platform for advancing quantum photonics,
Chih‐Zong Deng, Chun‐Hao Chiang, Sunhao Shi, Jui‐Han Fu, Yen‐Ju Wu, Kuniaki Konishi, Vincent Tung, Chun‐Wei Chen, Ya‐Lun Ho   +8 more
wiley   +1 more source

Thermal stability of interface dipole modulation in atomic layer-deposited HfO2/SiO2 multi-stack structures

AIP Advances, 2020
In this paper, we report on an interface dipole modulation (IDM) loss occurring in HfO2/atomically thin TiO2/SiO2 stack structures prepared by atomic layer deposition (ALD).
Shutaro Asanuma, Kyoko Sumita, Yusuke Miyaguchi, Kazumasa Horita, Takehito Jimbo, Kazuya Saito, Noriyuki Miyata   +6 more
doaj   +1 more source

Atomic layer deposition of ZnS nanotubes

, 2009
We report on growth of high-aspect-ratio ($\gtrsim300$) zinc sulfide nanotubes with variable, precisely tunable, wall thicknesses and tube diameters into highly ordered pores of anodic alumina templates by atomic layer deposition (ALD) at temperatures as
K Nielsch, Landolt H, Law M, Lieber C, M Pelletier, R B Yang, Sh Farhangfar, Zhang H, Zhou T-Y, Zhu Y-C   +9 more
core   +1 more source

Atomic Layer Deposition of Ni Thin Films and Application to Area-Selective Deposition [PDF]

, 2015
Ni thin films were deposited by atomic layer deposition (ALD) using bis(dimethylamino-2-methyl-2-butoxo)nickel [Ni(dmamb)(2)] as a precursor and NH3 gas as a reactant. The growth characteristics and film properties of ALD Ni were investigated.
Chung, TM, Heo, J, Heo, K, Hong, S, Kim, CG, Kim, H, Kim, WH, Lee, HBR, Lee, YK, 김형준   +9 more
core   +1 more source

Atomic layer deposition: A versatile technique for plasmonics and nanobiotechnology [PDF]

Journal of Materials Research, 2012
Abstract
Hyungsoon, Im, Nathan J, Wittenberg, Nathan C, Lindquist, Sang-Hyun, Oh   +3 more
openaire   +2 more sources