Results 41 to 50 of about 2,787,827 (292)

Coexisting Volatile and Nonvolatile Switching in 3D ALD-IGZO Vertical RRAM for Fully Hardware-Based Wide Reservoir Computing. [PDF]

Adv Sci (Weinh)
A conformal ALD‐IGZO vertical RRAM integrates volatile and nonvolatile switching within a compact 2F architecture. Before forming, tunable volatile dynamics provide fading‐memory reservoir states, while after forming, stable multilevel conductance modulation enables hardware readout.
Lee S, Park J, Kim N, Ju S, Jang SC, Kim HS, Kim S.   +6 more
europepmc   +2 more sources

Structure and Dielectric Property of High-k ZrO2 Films Grown by Atomic Layer Deposition Using Tetrakis(Dimethylamido)Zirconium and Ozone

Nanoscale Research Letters, 2019
s High-k metal oxide films are vital for the future development of microelectronics technology. In this work, ZrO2 films were grown on silicon by atomic layer deposition (ALD) using tetrakis(dimethylamido)zirconium and ozone as precursors. The relatively
Junqing Liu, Junpeng Li, Jianzhuo Wu, Jiaming Sun   +3 more
doaj   +1 more source

Chemical State Detection and Charge Transfer in Complex Oxide Heterostructures via In Situ Auger Electron Spectroscopy

Advanced Functional Materials, EarlyView.
In situ Auger Electron Spectroscopy resolves oxidation states with high fidelity during the pulsed laser deposition of multivalent perovskite manganate and vanadate heterostructures. The chemical‐state signature is carried by the valence‐electron population of the transition‐metal cation, read out through the relative intensities of Auger fine ...
Harish Kumarasubramanian, Jayakanth Ravichandran   +1 more
wiley   +1 more source

Advances in the application of atomic layer deposition in gas sensors

Gongneng cailiao yu qijian xuebao
Atomic layer deposition (ALD) represents a high-precision thin film deposition technique, distinguished by its sub-nanometer thickness control, superior uniformity, and unique three-dimensional conformality.
Fayu SONG, Jingyuan ZHANG, Weijin LI, Min TU   +3 more
doaj   +1 more source

Efficient Planar Perovskite Solar Cells Using Passivated Tin Oxide as an Electron Transport Layer

Advanced Science, 2018
Planar perovskite solar cells using low‐temperature atomic layer deposition (ALD) of the SnO2 electron transporting layer (ETL), with excellent electron extraction and hole‐blocking ability, offer significant advantages compared with high‐temperature ...
Yonghui Lee, Seunghwan Lee, Gabseok Seo, Sanghyun Paek, Kyung Taek Cho, Aron J. Huckaba, Marco Calizzi, Dong‐won Choi, Jin‐Seong Park, Dongwook Lee, Hyo Joong Lee, Abdullah M. Asiri, Mohammad Khaja Nazeeruddin   +12 more
doaj   +1 more source

Electrode and Microstructure Dependence of Oxygen Diffusion in Ferroelectric Hafnium Zirconium Oxide Thin Films

Advanced Functional Materials, EarlyView.
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg, Thomas W. Pfeifer, Chuanzhen Zhou, Yong Kyu Choi, Duk‐Hyun Choe, Patrick E. Hopkins, Jon F. Ihlefeld   +6 more
wiley   +1 more source

The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology

Nanomaterials, 2021
With the development of industrial civilization, advanced manufacturing technology has attracted widespread concern, including in the aerospace industry.
Guibai Xie, Hongwu Bai, Guanghui Miao, Guobao Feng, Jing Yang, Yun He, Xiaojun Li, Yun Li   +7 more
doaj   +1 more source

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

Advanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon, Junil Kim, Geuntae Park, Minseok Kim, Woohyun Hwang, Wanki Kim, Daewon Ha, Byeongmoon Lee, Jae Eun Jang, Hyuk‐Jun Kwon   +9 more
wiley   +1 more source

From atomic interfaces to scalable nanocrystal light-emitting diodes

Journal of Information Display
Atomic layer deposition (ALD) heralds a paradigm-shifting revolution in atomic-scale interface engineering for semiconductor nanocrystal light-emitting diodes (SNC-LEDs), elegantly unifying colloidal quantum dots (cQDs) and metal-halide perovskite ...
Rakesh Kumar Jha, Min Seok Kim, Eun A Kim, Seong-Yong Cho   +3 more
doaj   +1 more source

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park, Yeonseop Shin, Changhyeon Han, Sangwoo Kim, Eunchan Park, Youngchan Cho, Jaehong Min, Hyunjun Ahn, Jaekyoung Park, Cheol‐Woong Yang, Jangsaeng Kim, Daewoong Kwon, Wonjun Shin   +12 more
wiley   +1 more source