Results 21 to 30 of about 7,248 (265)

Area‐selective atomic layer deposition on HOPG enabled by writable electron beam functionalization

Nano Select, 2022
Area‐selective atomic layer deposition (AS‐ALD) techniques are an emerging class of bottom‐up nanofabrication techniques that selectively deposit patterned ALD films without the need for conventional top‐down lithography. To achieve this patterning, most
Gordon Koerner, Quinton K. Wyatt, Brady Bateman, Camden Boyle, Matthias J. Young, Matthew R. Maschmann   +5 more
doaj   +1 more source

Improved Monolayer MoS Performance With Two-Step Atomic Layer Deposited High- Dielectrics

IEEE Journal of the Electron Devices Society, 2022
Gate dielectric engineering is crucial to enable two-dimensional (2D) transition metal dichalcogenides (TMDs) for logic transistor applications. In this work, we demonstrate a uniform and pinhole-free bilayer high-κ fabricated on monolayer (1L ...
Bo-Jhih Chou, Yu-Cheng Chang, Wen-Hao Chang, Chao-Hsin Chen   +3 more
doaj   +1 more source

Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films

Beilstein Journal of Nanotechnology, 2013
We report on results on the preparation of thin (
Jörg Haeberle, Karsten Henkel, Hassan Gargouri, Franziska Naumann, Bernd Gruska, Michael Arens, Massimo Tallarida, Dieter Schmeißer   +7 more
doaj   +1 more source

Application of a Pd-TiO2 nanotube/Ti electrode prepared by atomic layer deposition to reductive dechlorination of trichloroethylene

Electrochemistry Communications, 2019
Trichloroethylene (TCE) is a toxic carcinogen. Electrocatalytic hydrodechlorination is a very effective and safe method for degrading TCE and does not produce any secondary pollution.
Jueming Lu, JianGuo Bao, Xueshi Lu, Dan Zheng, Xiaobin Li   +4 more
doaj   +1 more source

Structure and Dielectric Property of High-k ZrO2 Films Grown by Atomic Layer Deposition Using Tetrakis(Dimethylamido)Zirconium and Ozone

Nanoscale Research Letters, 2019
s High-k metal oxide films are vital for the future development of microelectronics technology. In this work, ZrO2 films were grown on silicon by atomic layer deposition (ALD) using tetrakis(dimethylamido)zirconium and ozone as precursors. The relatively
Junqing Liu, Junpeng Li, Jianzhuo Wu, Jiaming Sun   +3 more
doaj   +1 more source

Efficient Planar Perovskite Solar Cells Using Passivated Tin Oxide as an Electron Transport Layer

Advanced Science, 2018
Planar perovskite solar cells using low‐temperature atomic layer deposition (ALD) of the SnO2 electron transporting layer (ETL), with excellent electron extraction and hole‐blocking ability, offer significant advantages compared with high‐temperature ...
Yonghui Lee, Seunghwan Lee, Gabseok Seo, Sanghyun Paek, Kyung Taek Cho, Aron J. Huckaba, Marco Calizzi, Dong‐won Choi, Jin‐Seong Park, Dongwook Lee, Hyo Joong Lee, Abdullah M. Asiri, Mohammad Khaja Nazeeruddin   +12 more
doaj   +1 more source

The Applications of Ultra-Thin Nanofilm for Aerospace Advanced Manufacturing Technology

Nanomaterials, 2021
With the development of industrial civilization, advanced manufacturing technology has attracted widespread concern, including in the aerospace industry.
Guibai Xie, Hongwu Bai, Guanghui Miao, Guobao Feng, Jing Yang, Yun He, Xiaojun Li, Yun Li   +7 more
doaj   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source

Advances in the application of atomic layer deposition in gas sensors

Gongneng cailiao yu qijian xuebao
Atomic layer deposition (ALD) represents a high-precision thin film deposition technique, distinguished by its sub-nanometer thickness control, superior uniformity, and unique three-dimensional conformality.
Fayu SONG, Jingyuan ZHANG, Weijin LI, Min TU   +3 more
doaj   +1 more source

Solution‐Processed Two‐Dimensional Indium Oxide on Sodium‐Embedded Alumina for Reconfigurable Optoelectronic Synaptic Transistors

Advanced Functional Materials, EarlyView.
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min, Yonghyun Albert Kwon, Hyunbin Kim, Jihyun Kim, Myeongjin Jung, Jaewon Heo, Gwang Ya Kim, Vlastimil Mazanek, Zdeněk Sofer, In Soo Kim, Jeong Ho Cho, Hyesung Park, Sang Min Won, Joohoon Kang   +13 more
wiley   +1 more source