Results 101 to 110 of about 2,787,827 (292)
A Unified Flash Memory Platform for Mode‐Adaptive and Robust AI Computation
A unified AND‐type flash memory platform enables both transistor‐mode and capacitor‐mode computing‐in‐memory operations within the same device structure. By selectively switching the sensing mode through peripheral reconfiguration, the platform provides adaptable trade‐offs between computational accuracy, robustness, and energy efficiency for AI ...
Dayeon Yu +6 more
wiley +1 more source
Plasma atomic layer deposition [PDF]
Plasma atomic layer deposition (ALD) is optimized through modulation of the gas residence time during an excited species phase, wherein activated reactant is supplied such as from a plasma.
core +2 more sources
Comparative Study of Indium Oxide Films for High‐Mobility TFTs: ALD, PLD and Solution Process
Deposition of indium oxide base films for high‐mobility thin film transistors (TFTs) has been an important part in the implementation of high‐resolution and high‐frequency display back panels.
Min Guo +14 more
doaj +1 more source
A non‐filamentary self‐rectifying HfO2/TiOx resistive random‐access memory integrates H2 annealing with an incremental step pulse with verify algorithm to achieve stable and linear analog conductance modulation. The device enables low‐current 6‐bit multilevel operation while suppressing sneak current in crossbar arrays. Implemented in Transformer‐based
Seonjeong Lee +5 more
wiley +1 more source
Hierarchical Multi‐Mode Computing in Interlayer‐Coupled 3D RRAM Crossbar Arrays
2‐deck RRAM crossbar array provides a versatile hardware platform for multifunctional in‐memory computing. Stacked, series, and entropy node configurations enable multi‐layer conductance modulation, logic‐in‐memory operation, genetic learning, and reconfigurable physical unclonable functions.
Seungman Park +7 more
wiley +1 more source
Atomic layer deposition of functional multicomponent oxides
Advances in the fabrication of multicomponent oxide thin films are crucial to prepare specific compositions with precise structures and controlled interfaces.
Mariona Coll, Mari Napari
doaj +1 more source
Scalable inverted perovskite solar cells enabled by atomic layer deposition (ALD) [PDF]
Perovskite solar cells (PSCs) have managed to achieve certified power conversion efficiencies (PCEs) of 27.3%, yet losses during device upscaling remain a major roadblock in the path to commercialization.
Aedan Gibson +7 more
doaj +1 more source
An antiferroelectric tunnel junction serves as a reservoir computing node, where field‐induced phase transitions and spontaneous ZrO2 relaxation deliver nonlinear fading memory. An In‐Ga‐Zn oxide interlayer enlarges the memory margin and multibit state richness.
Taegyu Kwon +13 more
wiley +1 more source
HfO2‐based ferroelectrics exhibit wake‐up and fatigue behaviors during electrical cycling, significantly affecting device endurance and reliability. These phenomena are governed by defect dynamics, including oxygen vacancy redistribution and charge trapping.
Hongseok Kim +6 more
wiley +1 more source
Selective Polarity Control of Metal Oxide Semiconductors for Complementary Logic Gates
A scalable electrochemical doping strategy enables in situ p‐to‐n polarity conversion in tin oxide (SnO) thin films using electrolyte gating. Both the pristine p‐type SnO transistor and the electrochemically converted n‐type SnO2 transistor exhibited noticeable and stable electrical performance.
Dong Hyun Park +6 more
wiley +1 more source

