Results 161 to 170 of about 29,849 (211)
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Biocompatible Interface Films Deposited within Porous Polymers by Atomic Layer Deposition (ALD)
ACS Applied Materials & Interfaces, 2009Ultrathin ceramic films were deposited throughout highly porous poly(styrene-divinylbenzene) (PS-DVB) particles using a low-temperature atomic layer deposition (ALD) process. Alumina and titania films were deposited by alternating reactions of trimethylaluminum and H2O at 33 degrees C and of titanium tetrachloride and H2O2 (50 wt % in H2O) at 100 ...
Xinhua, Liang +4 more
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Atomic layer deposition (ALD) for optical nanofabrication
SPIE Proceedings, 2010ALD is currently one of the most rapidly developing fields of thin film technology. Presentation gives an overview of ALD technology for optical film deposition, highlighting benefits, drawbacks and peculiarities of the ALD, especially compared to PVD.
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Progress in Pulse Plating Atomic Layer Deposition (PP-ALD)
ECS Meeting Abstracts, 2015A family of absorber materials of interest for high volume production of photovoltaics is referred to as CZTS, or Cu2ZnSn(S,Se)4. The primary advantages of these materials are that they are made from nontoxic earth abundant elements. This group has been working on electrochemical atomic layer deposition (E-ALD) as a method for the formation of PV ...
John Lewellen Stickney +4 more
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Atomic layer deposition (ALD) of palladium: from processes to applications
Critical Reviews in Solid State and Materials Sciences, 2023International ...
Clément Lausecker +2 more
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Atomic layer deposition (ALD) technology for reliable RF MEMS
2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278), 2003A nano-layer inorganic coating technology has been developed to protect RF MEMS from electrical shorting as well as long-term reliability failures due to charging or moisture. The combination of alumina dielectric and zinc-oxide conducting layers can be constructed one atomic layer at a time. At 177/spl deg/C, the released RF MEMS devices can be coated
N. Hoivik +5 more
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Electron Enhanced Atomic Layer Deposition (EE-ALD)
2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2019Electron enhanced atomic layer deposition (EE-ALD) can dramatically reduce the temperatures required for film growth. Temperature reduction is possible because of electron stimulated desorption (ESD) of surface species. The desorption process creates highly reactive "dangling bond" surface sites.
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Atomic Layer Deposition (ALD) - Principes généraux, matériaux et applications
Innovations technologiques, 2016Cet article detaille le principe de la methode de depot chimique par flux alternes appelee Atomic Layer Deposition (ALD). A l’issue d’un inventaire des differents materiaux pouvant etre deposes par cette technique, il est suivi d’un bref resume de ses applications principales et emergentes.
Nathanaelle SCHNEIDER +1 more
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Atomic layer deposition (ALD) as a coating tool for reinforcing fibers
Analytical and Bioanalytical Chemistry, 2010Layers of alumina were deposited on to bundled carbon fibers in an atomic layer deposition (ALD) process via sequential exposure to vapors of aluminium chloride and water, respectively. Scanning electron microscopic (SEM) images of the coated fibers revealed that each individual fiber within a bundle was coated evenly and separately, fibers are not ...
A K, Roy +9 more
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TiO2/Ni Inverse-Catalysts Prepared by Atomic Layer Deposition (ALD)
Catalysis Letters, 2011Atomic layer deposition (ALD) was used to deposit TiO2 on Ni particles, and the catalytic activity of Ni for CO2 reforming of methane (CRM) was evaluated. In the presence of TiO2 islands on Ni surfaces, the onset temperature of the CRM reaction was lower than that of bare Ni.
Dong Wun Kim +7 more
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Formation of PbTe nanofilms by electrochemical atomic layer deposition (ALD)
Electrochimica Acta, 2008Abstract This article describes optimization of a cycle for the deposition of lead telluride (PbTe) nanofilms using electrochemical atomic layer deposition (ALD). PbTe is of interest for the formation of thermoelectric device structures. Deposits were formed using an ALD cycle on Au substrates, one atomic layer at a time, from separate solutions ...
Dhego O. Banga +5 more
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