Results 211 to 220 of about 7,300 (264)

Biocompatible Interface Films Deposited within Porous Polymers by Atomic Layer Deposition (ALD)

ACS Applied Materials & Interfaces, 2009
Ultrathin ceramic films were deposited throughout highly porous poly(styrene-divinylbenzene) (PS-DVB) particles using a low-temperature atomic layer deposition (ALD) process. Alumina and titania films were deposited by alternating reactions of trimethylaluminum and H2O at 33 degrees C and of titanium tetrachloride and H2O2 (50 wt % in H2O) at 100 ...
Xinhua Liang, David M KING, Stephanie J Bryant   +2 more
exaly   +3 more sources

Electrodeposition of Ru by atomic layer deposition (ALD)

Electrochimica Acta, 2008
Studies are presented describing attempts to form a cycle for the growth of Ru nanofilms using the electrochemical form of atomic layer deposition (ALD). Au substrates have been used to form Ru nanofilms, based on layer by layer growth of deposits, using surface limited reactions. These deposits were formed using surface limited redox replacement (SLRR)
Chandru Thambidurai, Youn-Geun Kim, John L. Stickney   +2 more
openaire   +1 more source

Atomic layer deposition (ALD) as a coating tool for reinforcing fibers

Analytical and Bioanalytical Chemistry, 2010
Layers of alumina were deposited on to bundled carbon fibers in an atomic layer deposition (ALD) process via sequential exposure to vapors of aluminium chloride and water, respectively. Scanning electron microscopic (SEM) images of the coated fibers revealed that each individual fiber within a bundle was coated evenly and separately, fibers are not ...
A K, Roy, W, Baumann, I, König, G, Baumann, S, Schulze, M, Hietschold, T, Mäder, D J, Nestler, B, Wielage, W A, Goedel   +9 more
openaire   +2 more sources

Mechanistic Details of Atomic Layer Deposition (ALD) Processes

Journal of the Korean Physical Society, 2007
Several examples are provided where the reaction mechanisms of atomic layer deposition (ALD) processes have been characterized by a combination of surface-sensitive techniques. In the first, a proposal is advanced for the layer-by-layer growth of metal films using metal carbonyl precursors and hydrogen as a carbon monoxide displacement agent.
Mingde Xu, Hugo Tiznado, Byung-Chang Kang, Menno Bouman, Ilkeun Lee, Francisco Zaera   +5 more
openaire   +1 more source

Frontiers in Applied Atomic Layer Deposition (ALD) Research

Materials Science Forum, 2012
Atomic layer deposition (ALD) has been a key player in advancing the science and technology of nanomaterials synthesis and device fabrication. The monolayer (ML) control of growth rate obtained with ALD combined with its ability to self-limit growth reactions at the gas-substrate interface can be exploited in fundamentally new ways to produce novel ...
Fei Wu, Jun Nan Wu, Sriya Banerjee, Oshri Blank, Parag Banerjee   +4 more
openaire   +1 more source

Atomic layer deposition (ALD) of palladium: from processes to applications

Critical Reviews in Solid State and Materials Sciences, 2023
International ...
Clément Lausecker, David Muñoz-Rojas, Matthieu Weber   +2 more
openaire   +2 more sources

Atomic layer deposition (ALD) for optical nanofabrication

SPIE Proceedings, 2010
ALD is currently one of the most rapidly developing fields of thin film technology. Presentation gives an overview of ALD technology for optical film deposition, highlighting benefits, drawbacks and peculiarities of the ALD, especially compared to PVD.
openaire   +1 more source

PtRu Nanofilm Formation by Electrochemical Atomic Layer Deposition (E-ALD)

Langmuir, 2014
The high CO tolerance of PtRu electrocatalysis, compared with pure Pt and other Pt-based alloys, makes it interesting as an anode material in proton exchange membrane fuel cells (PEMFC) and direct methanol fuel cells (DMFC). This report describes the formation of bimetallic PtRu nanofilms using the electrochemical form of atomic layer deposition (E-ALD)
Nagarajan, Jayaraju, Dhego, Banga, Chandru, Thambidurai, Xuehai, Liang, Youn-Guen, Kim, John L, Stickney   +5 more
openaire   +2 more sources

Atomic layer deposition (ALD) tungsten nano-electromechanical transistors

2010 IEEE 23rd International Conference on Micro Electro Mechanical Systems (MEMS), 2010
In this paper a relatively simple, CMOS compatible, top-down nano-fabrication process used in the fabrication of 3-terminal NEMS switches is introduced. The process is low-temperature, using atomic layer deposition tungsten (WALD) deposited at 120 °C as the structural material.
B.D. Davidson, S.M. George, V.M. Bright
openaire   +1 more source