Results 221 to 230 of about 30,611 (305)
Temperature-Dependent Atomic Layer Deposition of Passivating ZnO Nanolayers for Dye-Sensitized Solar Cells. [PDF]
Addae EA, Szindler M, Sitek W, Matus K.
europepmc +1 more source
Germanium‐Based Mid‐Infrared Integrated Photonics
The mid‐infrared (mid‐IR) spectral range is a part of the electromagnetic spectrum in which most of the molecules have vibrational and rotational resonances. Photonics integration in this wavelength range have thus seen a burst of interest in the recent years, mainly driven by applications related with the detection of chemical and biological ...
Delphine Marris‐Morini +6 more
wiley +1 more source
Ultrathin Monatomic Antimony Films by Sacrificial Atomic Layer Deposition for Phase Change Memory. [PDF]
Jeon G +9 more
europepmc +1 more source
3ω Study of Hybrid Nanostructure Epoxy Thin Films for Thermal Interfaces. ABSTRACT Epoxy‐based thin films reinforced with graphene oxide (GO), hexagonal boron nitride (h‐BN), and their hybrid combination (GO/h‐BN) at low filler contents (< 1 wt%) were developed to advance thermosetting nanocomposites for high‐performance thermal interface materials ...
Vinicius Alvarenga +6 more
wiley +1 more source
Atomic Layer Deposition for Perovskite Solar Cells: Interface Engineering, Stability Enhancement, and Future Prospects. [PDF]
Liao X +6 more
europepmc +1 more source
Area-Selective Low-Pressure Thermal Atomic Layer Deposition of Gallium Nitride. [PDF]
van der Wel BY +3 more
europepmc +1 more source
Silver‐Alloyed Wide‐Bandgap (Ag,Cu)(In,Ga)S2 Thin‐Film Solar Cells With 15.5% Efficiency
This study reports improvements in compositional homogeneity, microstructure, enhanced radiative recombination, and extended carrier lifetime of CIGS absorber via Ag incorporation. The optimal Ag‐alloyed CIGS solar cells achieve 15.5% PCE and 948 mV VOC, competing with the VOC of the Ag‐free reference sample from the same batch.
Yucheng Hu +16 more
wiley +1 more source
Advances in Gate Dielectrics for 2D Electronics
This review discusses advanced gate dielectric integration for 2D electronic devices, including layered and nonlayered dielectric materials, while highlighting strategies such as seed‐assisted ALD, transfer methods, and in situ oxidation. By focusing on interface engineering and materials innovation, new routes for scalable, high‐performance 2D ...
Moon‐Chul Jung +2 more
wiley +1 more source
Nanoionics Drastically Accelerating Mass Transfer at Elevated Temperatures over 750 °C. [PDF]
Chen Y +4 more
europepmc +1 more source

