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Atomic Layer Deposition and Atomic Layer Etching—An Overview of Selective Processes
, 2021 The continued evolution in nanoelectronics and nanophotonics has been made possible by the recent developments in Atomic Layer Deposition and Atomic Layer Etching. While uniform deposition of conformal films with controllable thickness is a key feature of Atomic Layer Deposition, Atomic Layer Etching offers the advantages of controlled removal of ...
Samiha Hossain +2 more
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Atomic Layer Etching of Porous Silicon
MRS Proceedings, 1996 AbstractIn this work we describe the controlled shifting of the PL peak of p+ (10 mΩcm) porous silicon (PoSi) by means of atomic layer etching (ALEP). We hereby study the cluster-size dependence of the PL of this material. By this technique of repeated oxidation by H2O2 and stripping of the oxidized surface layer, we reduced the size of the ...
I. H. Libon +3 more
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The 33rd IEEE International Conference on Plasma Science, 2006. ICOPS 2006. IEEE Conference Record - Abstracts., 2006
Summary form only given. The thinning of the dielectric in the metal (and non-metal) gate stacks and the need to resolve etching on an atomic layer basis present large technological challenges. Conventional plasma processes which utilize reactive ion etching typically do not have sufficient controllability to achieve atomic layer resolution and to ...
A. Agarwal, M.J. Kushner
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Summary form only given. The thinning of the dielectric in the metal (and non-metal) gate stacks and the need to resolve etching on an atomic layer basis present large technological challenges. Conventional plasma processes which utilize reactive ion etching typically do not have sufficient controllability to achieve atomic layer resolution and to ...
A. Agarwal, M.J. Kushner
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Atomic layer etching of germanium
Applied Surface Science, 1997Abstract Atomic layer etching of Ge has been investigated experimentally based on the surface chemistry that Cl can adsorb on the clean Ge surface at room temperature and desorb thermally as GeCl 2 at high temperatures. The ideal etching rate of one monolayer per cycle has been achieved.
Keiji Ikeda +2 more
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Thermal atomic layer etching: A review
Journal of Vacuum Science & Technology A, 2021This article reviews the state-of-the art status of thermal atomic layer etching of various materials such as metals, metal oxides, metal nitrides, semiconductors, and their oxides. We outline basic thermodynamic principles and reaction kinetics as they apply to these reactions and draw parallels to thermal etching.
Andreas Fischer +3 more
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Atomic layer in situ etching and MBE regrowth
Journal of Crystal Growth, 1999We report on atomic layer precise etching in MBE with AsBr 3 as the etching species. Selective etching of SiO 2 masked GaAs (100) substrates allows in situ preparation of extremely sharp V-grooves with almost perfect planar {110} side facets. By MBE regrowth of V-grooves we can prepare buried layers and completely embedded wires.
Eberl, K., Lipinski, M., Schuler, H.
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