Results 61 to 70 of about 2,309,761 (293)

cluster tool for studying reaction mechanisms in atomic layer deposition and atomic layer etching processes

, 2023
In this paper, we introduce a vacuum cluster tool designed specifically for studying reaction mechanisms in atomic layer deposition (ALD) and atomic layer etching (ALE) processes. In the tool, a commercial flow-type ALD reactor is in vacuo connected to a
Heta-Elisa Nieminen, Nieminen, Heta-Elisa, Putkonen, Matti, Mikko J. Heikkilä, Matti Putkonen, Paloma Ruiz Kärkkäinen, Karkkainen, Paloma Ruiz, Vehkamaki, Marko, Mykhailo Chundak, Chundak, Mykhailo, Ritala, Mikko, Marko Vehkamäki, Heikkila, Mikko J., Mikko Ritala   +13 more
core   +1 more source

Mechanical white etching layer formation kinetics in pearlitic steels: A phenomenological model based on microstructural characterization [PDF]

, 2023
In order to predict the lifetime of railtrack components, numerical models are required to better describe the apparition of microstructural defects that lead to material failure.
MERINO, Pierrick, SAULOT, Aurélien, LEBON, Frédéric, THIERCELIN, Leo, CAZOTTES, Sophie   +4 more
core   +1 more source

Research progress of high precision and selective atomic layer etching technology

Gongneng cailiao yu qijian xuebao
With the rapid development of semiconductor technology, the key sizes of chips continue to shrink, and even require complex three-dimensional structures, such as FinFET and 3D NAND flash memory.
Yi OUYANG, Guanghui YAN, Guoxiang CHEN, Gaoshan HUANG, Xiangzhong CHEN, Zhihao BAO, Jianjun SHI, Xueqin ZUO, Yongfeng MEI   +8 more
doaj   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Photochemical atomic layer deposition and etching [PDF]

, 2016
Conventional atomic layer deposition (ALD) is a thermo-chemical process that is now used extensively in the manufacture of ultrathin films. In addition to substrate heating, various forms of other "assisted" ALD processes are actively being developed ...
Chalker, PR, Chalker, P.R.
core   +1 more source

Fully Additive Vertical Organic Electrochemical Transistors on Renewable and Compostable Substrates Enable Ultrasensitive Bioelectronics

Advanced Functional Materials, EarlyView.
Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi, Samuele Lavelli, Zsolt M. Kovács‐Vajna, Fabrizio Torricelli   +3 more
wiley   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

Fabrication of Ultra-High Aspect Ratio (>420:1) Al₂O₃ Nanotube Arraysby Sidewall TransferMetal Assistant Chemical Etching

Micromachines, 2020
We report a robust, sidewall transfer metal assistant chemical etching scheme for fabricating Al2O3 nanotube arrays with an ultra-high aspect ratio. Electron beam lithography followed by low-temperature Au metal assisted chemical etching (MacEtch) is ...
Hailiang Li, Changqing Xie
doaj   +1 more source

Advances in Sustainable and Wearable Textile Based Soft Robotics

Advanced Functional Materials, EarlyView.
This Review examines advances in wearable textile‐based soft robotics, focusing on sustainable materials, integrated sensing, and scalable actuation. It discusses manufacturing and system integration across healthcare, assistive robotics, prosthetics, and human–machine interfaces, and highlights key challenges in circular design, including life‐cycle ...
Zahir Abbas, Marzia Dulal, Sophia K. Novoselov, Victoria K. Novoselov, Kostya S. Novoselov, Shaila Afroj, Nazmul Karim   +6 more
wiley   +1 more source

Atomic layer processing for Ångström-scale precision in 3D-integrated semiconductor manufacturing

International Journal of Extreme Manufacturing
For decades, conventional geometric scaling has driven performance improvements in the semiconductor industry. However, the continued reduction in technology nodes has increasingly become decoupled from simple dimensional shrinkage, instead reflecting ...
Hae Lin Yang, Min Chan Kim, Gi-Beom Park, Ji-Yeon Park, Hyein Park, Jihoon Shin, Jinho Ahn, Jin-Seong Park   +7 more
doaj   +1 more source