Results 41 to 50 of about 2,309,761 (293)

Design and fabrication of dust removal nanoarray structure on the surface of solar cell glass cover

Journal of Science: Advanced Materials and Devices, 2023
A nanoarray structure was constructed on the quartz glass cover surface, which had both strong dust removal ability and significant anti-reflection. Firstly, a structure model of dust removal nanoarray was established to investigate the effects of the ...
Zhang Guanglu, Huang Jindong, Wang Luoshu, Geng Zhenbo, Zhang Dequan, Liu Juncheng   +5 more
doaj   +1 more source

Nanostructure and optical propertes of porous silicon layer [PDF]

Kirkuk Journal of Science, 2015
In this paper nanostructures Porous silicon layers have been prepared by electrochemical etching (ECE) technique of (111) P-type silicon wafer with a solution Electrolytic HF: ethanol at a concentration of 1:2 with various anodization currents and ...
Shihab A. Motar, Falah A-H. Mutlak, Baha T.Chiad   +2 more
doaj   +1 more source

Micromachining of Al2O3 thin films via laser drilling and plasma etching for interfacing copper

Materials & Design, 2021
Due to their chemical inertness and high-temperature stability, atomic layer deposited (ALD) oxide thin films emerged as an attractive copper encapsulation, passivation, and protection technology.
Gül Dogan, Frank Chiu, Sam U.H. Chen, Mebil R.T. David, Andreas Michalowski, Michael Schänzel, Christian Silber, Gisela Schütz, Corinne Grévent, Kahraman Keskinbora   +9 more
doaj   +1 more source

Atomic Layer Deposition of Lithium Fluoride Optical Coatings for the Ultraviolet

Inorganics, 2018
Lithium fluoride is an important material for ultraviolet optical systems, possessing among the largest optical bandgaps of dielectric materials. We report on the development of an atomic layer deposition (ALD) process for lithium fluoride that is ...
John Hennessy, Shouleh Nikzad
doaj   +1 more source

Effect of Atomic Layer Etching on n-GaN MOS Capacitors

IEEE Journal of the Electron Devices Society
Gallium nitride (GaN) with its high breakdown voltage and low specific on resistance is suitable for high voltage power electronic applications. Common dry etching processes such as reactive ion etching with an inductively coupled plasma (ICP-RIE ...
Sesha Gopal Selvakumar, Tobias Claus, Dong Wang   +2 more
doaj   +1 more source

Concept model of atomic hydrogen dry developing process for photolithographic patterning

AIP Advances, 2020
Atomic hydrogen dry etching was used for microstructure fabrication. Photolithography was proposed and achieved by a dry development process using atomic hydrogen irradiation.
Yuki Takemori, Masao Gohdo, Yuta Koda, Hideo Horibe   +3 more
doaj   +1 more source

Influence of Scan Strategies in Electron Beam Powder Bed Fusion on Solidification, Microstructure, and High‐Temperature Compressive Properties of γ′‐Strengthened Inconel 738LC

Advanced Engineering Materials, EarlyView.
Experiments and thermophysical simulations were conducted to investigate the electron beam powder bed fusion electron beam (PBF‐EB/M) process for the γ′‐strengthened nickel‐based superalloy Inconel 738LC. The results demonstrate the impact of process‐induced microstructural variations on high‐temperature mechanical behavior, providing a basis for ...
Jan Niklas Petenati, Karthik Kumar Banku, Prasanth Bondi, Ivan Zhirnov, Yangyiwei Yang, Gordon Schmidt, Jürgen Christen, Georg Hasemann, Manja Krüger, Bai‐Xiang Xu, Bilal Gökce, Silja‐Katharina Rittinghaus   +11 more
wiley   +1 more source

Seeding-Layer-Free Deposition of High-k Dielectric on CVD Graphene for Enhanced Gate Control Ability

Crystals, 2022
The gate insulator is one of the most crucial factors determining the performance of a graphene field effect transistor (GFET). Good electrostatic control of the conduction channel by gate voltage requires thin gate oxides.
Yunpeng Yan, Songang Peng, Zhi Jin, Dayong Zhang, Jingyuan Shi   +4 more
doaj   +1 more source

Investigating the Effect of Inclination Angle and the Influence of Scan Parameters on the Appearance and Thermal and Mechanical Properties of Filigree Tension Rods of LPBF‐Manufactured NiTi Shape‐Memory Alloys

Advanced Engineering Materials, EarlyView.
This article investigates the dependence of the properties on the manufacturing orientation in the form of the inclination angle to the build plate of LPBF‐fabricated NiTi rods with a diameter of 150–220 µm. Metallographic, chemical, thermal, and mechanical characterization show behavior under identical manufacturing conditions that ranges from ...
Sandra Herzig, Michael Werner, Christian Rotsch   +2 more
wiley   +1 more source

Research status and development trend of area selective atomic layer deposition

Gongneng cailiao yu qijian xuebao
In recent years, with manufacturing technology advancing into the atomic age, significant progress has been achieved in nano-manufacturing technologies.
Xiaorui WU, Yi OUYANG, Jianjun SHI, Xueqiang LU, Xueqin ZUO   +4 more
doaj   +1 more source