Results 31 to 40 of about 2,309,761 (293)

ICP Etching of Silicon for Micro and Nanoscale Devices [PDF]

, 2010
The physical structuring of silicon is one of the cornerstones of modern microelectronics and integrated circuits. Typical structuring of silicon requires generating a plasma to chemically or physically etch silicon.
Henry, Michael David
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Atomic layer etching of gallium nitride (0001) [PDF]

, 2017
In this work, atomic layer etching (ALE) of thin film Ga-polar GaN(0001) is reported in detail using sequential surface modification by Cl2 adsorption and removal of the modified surface layer by low energy Ar plasma exposure in a standard reactive ion ...
Kauppinen, Esko I., Sundqvist, Jonas, Dmitry B. Suyatin, Kauppinen, Christoffer, Kauppinen, Christoffer; id_orcid, Khan, Sabbir Ahmed, Christoffer Kauppinen, Sabbir Ahmed Khan, Suyatin, Dmitry B., Esko I. Kauppinen, Jonas Sundqvist, Markku Sopanen, Suihkonen, Sami, Suihkonen, Sami; id_orcid, Sopanen, Markku, Sami Suihkonen   +15 more
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In-situ observation and atomic resolution imaging of the ion irradiation induced amorphisation of graphene [PDF]

, 2014
Ion irradiation has been observed to induce a macroscopic flattening and in-plane shrinkage of graphene sheets without a complete loss of crystallinity.
Greaves, Graeme, Haigh, S. J., Bangert, U., Haigh, S. J.; id_orcid, Ramasse, Quentin Mathieu, Donnelly, S. E., Hinks, J. A., Ramasse, Q. M., Pan, C. T., Greaves, G., Pan, C.-T.   +10 more
core   +1 more source

Thermal Atomic Layer Deposition and Thermal Atomic Layer Etching For Device Applications [PDF]

, 2019
Thermal atomic layer deposition (ALD) and thermal atomic layer etching (ALE) are important techniques for current and future microelectromechanical systems (MEMS) and microelectronic devices. Both atomic layer processing techniques use sequential surface
Gertsch, Jonas
core   +8 more sources

Enhancing Laser Damage Resistance of Co²⁺:MgAl₂O₄ Crystal by Plasma Etching

Applied Sciences, 2023
Co2+:MgAl2O4 crystals are successfully used as passive Q-switches within the cavity of erbium glass lasers. Their limited resistance to laser radiation might also put constraints on the generated output peak power.
Giedrius Abromavičius, Martynas Skapas, Remigijus Juškėnas   +2 more
doaj   +1 more source

High synergy atomic layer etching of AlGaN/GaN with HBr and Ar [PDF]

, 2022
Here, we show a process of AlGaN/GaN atomic layer etching with a high synergy of >91%. Achieved by means of a cyclical HBr and Ar process, highly controllable layer removal was observed within the atomic layer etching window and is attributed to ...
Li, Xu, Thayne, Iain, Iain Thayne, Hemakumara, Dilini Tania, Kevin G. Crawford, Grant, James, Crawford, Kevin G., Dilini Tania Hemakumara, Xu Li, David A. J. Moran, Moran, David A.J., James Grant   +11 more
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Isotropic plasma atomic layer etching of Al2O3

, 2020
Data used to plot all of the figures in the letter titled "Isotropic plasma atomic layer etching of Al2O3 using a fluorine containing plasma and Al(CH3)3)".
Chittock, Nicholas J., Selective atomic-scale processing for nanoelectronics, Plasma & Materials Processing   +2 more
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Classification of hyper-variable Corynebacterium glutamicum surface-layer proteins by sequence analyses and atomic force microscopy [PDF]

, 2004
Hansmeier N, Bartels FW, Ros R, et al. Classification of hyper-variable Corynebacterium glutamicum surface-layer proteins by sequence analyses and atomic force microscopy. J Biotechnol.
Hansmeier, Nicole, Ros, Robert, Bartels, Frank Wilco, Tauch, Andreas, Pühler, Alfred ; https://orcid.org/, Kalinowski, Jörn, Anselmetti, Dario ; https://orcid.org/   +6 more
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The Effect of Etching Time On Structural Properties of Porous Quaternary AlInGaN Thin Films

Iraqi Journal of Physics, 2021
Using photo electrochemical etching technique (PEC), porous silicon (PS) layers were produced on n-type silicon (Si) wafers to generate porous silicon for n-type with an orientation of (111) The results of etching time were investigated at: (5,10,15 min).
Ghasaq Ali Tomaa, Alaa Jabbar Ghazai
doaj   +1 more source

Preparation and Characterization Study of Porous Silicon Doped with Cu and Ag [PDF]

Engineering and Technology Journal, 2017
In this paper, porous silicon was prepared by using electrochemical etching technique of p-type silicon acceptor, with a resistivity of 1.5-4Ohm.cm, using hydrochloric acid with concentration of 24%. The etching current density effect 4, 12, 20mA/cm2 was
U. M. Nayef, A.M. Abdul Hussein, A. J. Kata   +2 more
doaj   +1 more source