Results 11 to 20 of about 2,309,761 (293)
Atomic-layer soft plasma etching of MoS2 [PDF]
Scientific Reports, 2016 AbstractTransition from multi-layer to monolayer and sub-monolayer thickness leads to the many exotic properties and distinctive applications of two-dimensional (2D) MoS2. This transition requires atomic-layer-precision thinning of bulk MoS2without damaging the remaining layers, which presently remains elusive. Here we report a soft, selective and high-
Xiao, Shaoqing +8 more
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Atomic Layer Etching: What Can We Learn from Atomic Layer Deposition? [PDF]
ECS Journal of Solid State Science and Technology, 2015 Current trends in semiconductor device manufacturing impose extremely stringent requirements on nanoscale processing techniques, both in terms of accurately controlling material properties and in terms of precisely controlling nanometer dimensions. To take nanostructuring by dry etching to the next level, there is a fast growing interest in so-called ...
Faraz, T. +3 more
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Isotropic Atomic Layer Etching of ZnO Using Acetylacetone and O2 Plasma. [PDF]
ACS Appl Mater Interfaces, 2018 Atomic layer etching (ALE) provides Ångström-level control over material removal and holds potential for addressing the challenges in nanomanufacturing faced by conventional etching techniques.
Mameli A +4 more
europepmc +3 more sources
Origin of Enhanced Thermal Atomic Layer Etching of Amorphous HfO2 [PDF]
, 2021 HfO2 is a high-k material that is used in semiconductor devices. Atomic-level control of material processing is required for the fabrication of thin films of high-k materials at nanoscale device sizes.
Michael, Nolan +2 more
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IEEE Open Journal of Nanotechnology, 2021 We investigated a high electron mobility Ge FinFET fabricated by defect-free and roughness-free atomic layer neutral beam etching (NBE) compared with one fabricated by conventional plasma etching (PE).
Daisuke Ohori +8 more
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Structural, Chemical and Morphological of Porous Silicon Produced by Electrochemical Etching [PDF]
Engineering and Technology Journal, 2012 In this paper, the nanocrystalline porous silicon (PS) films is prepared by electrochemical etching of p-type silicon wafer with different currents density (15 and 30 mA/cm2) and etching times on the formation nano-sized pore array with a dimension of ...
Amna A. Salman +2 more
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I-V and C-V Characteristics of Porous Silicon Nanostructures by Electrochemical Etching [PDF]
Engineering and Technology Journal, 2013 Porous silicon (PS) layers has been prepared in this work by electrochemical etching (ECE) technique of a p-type silicon wafer with resistivity (1.5-4 Ω.cm) in hydrofluoric (HF) acid of 20% concentration.
Fatima I. Sultan +2 more
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Principles of atomic layer etching of metallic thin films
, 2022 Teplyakov, Andrew V.Modern nanoscale fabrication requires precise control over both nanoscaledimensions and material properties. Atomic layer processes, such as atomic layerdeposition (ALD) and atomic layer etching (ALE), provide a conformal ...
Konh, Mahsa
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Aero-TiO2 Prepared on the Basis of Networks of ZnO Tetrapods
Crystals, 2022 In this paper, new aeromaterials are proposed on the basis of titania thin films deposited using atomic layer deposition (ALD) on a sacrificial network of ZnO microtetrapods.
Vladimir Ciobanu +9 more
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Mechanisms of Thermal Atomic Layer Etching [PDF]
Accounts of Chemical Research, 2020 ConspectusAtomic layer control of semiconductor processing is needed as critical dimensions are progressively reduced below the 10 nm scale. Atomic layer deposition (ALD) methods are meeting this challenge and produce conformal thin film growth on high aspect ratio features.
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