Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption [PDF]
Scientific Reports, 2021 Cryogenic Atomic Layer Etching (cryo-ALE) of SiO2 based on alternating a C4F8 molecule physisorption step and an argon plasma step, has been enhanced thanks to a better understanding of the mechanism. First, we used Quadrupole Mass spectrometry (QMS) and
G. Antoun +5 more
doaj +2 more sources
Halogen‐Free Anisotropic Atomic‐Layer Etching of HfO2 at Room Temperature [PDF]
Small ScienceHafnium(IV) oxide (HfO2)‐based materials have attracted substantial interest owing to their outstanding performance in advanced ultrathin semiconductor devices.
Shih‐Nan Hsiao +5 more
doaj +2 more sources
Atomic layer etching of graphene through controlled ion beam for graphene-based electronics [PDF]
Scientific Reports, 2017 The electronic and optical properties of graphene are greatly dependent on the the number of layers. For the precise control of the graphene layers, atomic layer etching (ALE), a cyclic etching method achieved through chemical adsorption and physical ...
Ki Seok Kim +6 more
doaj +2 more sources
Molecular dynamics simulation of atomic layer etching for sidewall damage recovery in GaN-based structures [PDF]
Scientific ReportsToday, as GaN-based devices are becoming increasingly smaller, dry etching has been employed, but it has caused damage, particularly in InGaN/GaN multiple quantum well (MQW) structures exposed to Cl2-based reactive ion etching (RIE).
Eun Koo Kim +13 more
doaj +2 more sources
Atomic Force Microscopy (AFM)-Based Metrology for Advanced Etching in Three-Dimensional Integrated Circuits [PDF]
MicromachinesFueled by the push for “More than Moore”, three-dimensional integrated circuits (3D ICs) have become a backbone of next-generation electronics. Their complex architectures place unprecedented demands on etching technologies, which must now deliver atomic
Jing Chang +4 more
doaj +2 more sources
Fabrication of β-Ga2O3 Nanotubes via Sacrificial GaSb-Nanowire Templates
Nanomaterials, 2023 β-Ga2O3 nanostructures are attractive wide-band-gap semiconductor materials as they exhibit promising photoelectric properties and potential applications.
Lei Shangguan +9 more
doaj +1 more source
Recent Progress of Atomic Layer Technology in Spintronics: Mechanism, Materials and Prospects
Nanomaterials, 2022 The atomic layer technique is generating a lot of excitement and study due to its profound physics and enormous potential in device fabrication. This article reviews current developments in atomic layer technology for spintronics, including atomic layer ...
Yuanlu Tsai, Zhiteng Li, Shaojie Hu
doaj +1 more source
Crystals, 2022 Wafer-scale on-axis 4H-SiC epitaxial layers with very low roughness were obtained in this study. By performing carbon-rich hydrogen etching and epitaxial growth of the epitaxial layer at different temperatures, local mirror regions (LMRs) with root mean ...
Jiulong Wang +6 more
doaj +1 more source
Atomic Layer Etching: Rethinking the Art of Etch [PDF]
The Journal of Physical Chemistry Letters, 2018 Atomic layer etching (ALE) is the most advanced etching technique in production today. In this Perspective, we describe ALE in comparison to long-standing conventional etching techniques, relating it to the underlying principles behind the ancient art of etching.
Keren J. Kanarik +2 more
openaire +2 more sources
Study of Characteristics of Porous Silicon by Electrochemical Etching [PDF]
Engineering and Technology Journal, 2013 In this work, the nanocrystalline porous silicon layer is prepared by electrochemical etching of p-type silicon wafer. The morphological films characterized have been studied of the by atomic force microscopy, XRD and FTIR spectroscopy.The atomic force ...
Hasan Hadi Hussein
doaj +1 more source