Results 21 to 30 of about 2,309,761 (293)

Investigation of Laser Assisted Etching for Preparation Silicon Nanostructure and Diagnostic Physical Properties [PDF]

Engineering and Technology Journal, 2015
In this paper; nanostructure porous silicon (PS) was prepared by using photo-electrochemical etching (PECE) of n-type silicon at 10 & 30 mA/cm2 etching current density for 10 minute.
Zahraa J. Abdulkareem, Uday M. Nayef, Kadhim A.Hubeatir   +2 more
doaj   +1 more source

A two-step physical-chemical etching technique to improve laser damage resistance of fused silica

Journal of Materials Research and Technology, 2022
A two-step physical-chemical etching method, namely large incident angle ion beam etching followed by HF etching, is proposed to remove the damage precursors in fused silica surface to achieve good surface quality and significantly improve the laser ...
Bo Li, Wenfeng Sun, Xia Xiang, Xiaolong Jiang, Wei Liao, Haijun Wang, Xiaodong Yuan, Xiaodong Jiang, Xiaotao Zu   +8 more
doaj   +1 more source

Development of nanometer-thick graphite film extreme ultraviolet pellicle with hydrogen-resistant TiN capping layer

Materials Research Express, 2022
TiN has beneficial physicochemical properties, such as high hardness, good chemical inertness, and good corrosion resistance. TiN has been used for optical filters and protective coatings to exploit these properties.
Jin-Ho Yeo, Ki-Bong Nam, Gil-Seon Kang, Qicheng Hu, Chang-Young Jeong, Young-Soo Park, Seok Jong Lee, Jaesun Jung, Seung Hyun Lee, Deok Hyun Cho, Mun-Ja Kim, Ji-Beom Yoo   +11 more
doaj   +1 more source

Plasma-Assisted Nanofabrication: The Potential and Challenges in Atomic Layer Deposition and Etching

Nanomaterials, 2022
The growing need for increasingly miniaturized devices has placed high importance and demands on nanofabrication technologies with high-quality, low temperatures, and low-cost techniques.
William Chiappim, Benedito Botan Neto, Michaela Shiotani, Júlia Karnopp, Luan Gonçalves, João Pedro Chaves, Argemiro da Silva Sobrinho, Joaquim Pratas Leitão, Mariana Fraga, Rodrigo Pessoa   +9 more
doaj   +1 more source

Surface Smoothing by Atomic Layer Deposition and Etching for the Fabrication of Nanodevices [PDF]

, 2022
[Image: see text] In many nano(opto)electronic devices, the roughness at surfaces and interfaces is of increasing importance, with roughness often contributing toward losses and defects, which can lead to device failure.
Kessels, Wilhelmus M.M., Marcel A. Verheijen, Knoops, Harm C.M.; id_orcid, Chittock, Nicholas J., Vincent Vandalon, Sven H. Gerritsen, Knoops, Harm C. M., Kessels, Wilhelmus M. M., Knoops, Harm C.M., Gerritsen, Sven H., Verheijen, Marcel A., Adriaan J. M. Mackus, Mackus, Adriaan J. M., Harm C. M. Knoops, Wilhelmus M. M. Kessels, Vandalon, Vincent, Nicholas J. Chittock, Mackus, Adriaan J.M.   +17 more
core   +2 more sources

The Atomic Layer Etching Technique with Surface Treatment Function for InAlN/GaN Heterostructure

Crystals, 2022
This paper studied an atomic layer etching (ALE) technique with a surface treatment function for InAlN/GaN heterostructures with AlN spacer layers. Various parameters were attempted, and 30 s O2 + 15 W BCl3 was chosen as the optimal recipe.
Fangzhou Du, Yang Jiang, Zhanxia Wu, Honghao Lu, Jiaqi He, Chuying Tang, Qiaoyu Hu, Kangyao Wen, Xinyi Tang, Haimin Hong, Hongyu Yu, Qing Wang   +11 more
doaj   +1 more source

Studying the efficacy of hydrogen plasma treatment for enabling the etching of thermally annealed ruthenium in chemical solutions

Micro and Nano Engineering, 2023
Ruthenium (Ru) is a noble metal and is known to be resistant to many common chemicals and mixtures. We report in this study a controlled etching/recessing of Ru via wet processing and a combination of dry and wet process using metal-free chemical ...
Q.T. Le, E. Gül Arslan, J. Rip, H. De Coster, P. Verdonck, D. Radisic, F. Schleicher, I. Vaesen, T. Conard, E. Altamirano-Sanchez   +9 more
doaj   +1 more source

Atomic Layer Etching.

Nihon Kessho Gakkaishi, 1991
Concept of atomic layer etching is described. Experimental results on the atomic layer con-trolled etching are reported. Under alternative supply of Cl2, the etching rate saturates at 1/3 mono-layer/cycle as a function of Cl gas feeding rate. By using Cl radical, the etching rate saturates at one atomic layer/cycle as a function of Cl gas feeding rate ...
AOYAGI, Yoshinobu, MEGURO, Takashi
openaire   +2 more sources

Etching with atomic-level precision:The emerging field of atomic layer etching [PDF]

, 2020
Following the example of ALD, its etching counterpart atomic layer etching (ALE) is currently being implemented in the semiconductor industry for the fabrication of integrated circuits.
Faraz, Tahsin, Chittock, Nicholas, Faraz, T Tahsin, Mackus, AJM Adrie, Mackus, Adriaan J.M.   +4 more
core   +2 more sources

Direct CVD Growth of Transferable 3D Graphene for Sensitive and Flexible SERS Sensor

Nanomaterials, 2023
Three-dimensional (3D) graphene (Gr) has been successfully grown on a patterned sapphire substrate (PSS) with very low mismatch between Gr and the sapphire nanostructure through metal-catalyst-assisted chemical vapor deposition (CVD).
Su Han Kim, Shiru Jiang, Sang-Shin Lee
doaj   +1 more source