Results 211 to 220 of about 102,528 (248)

Temperature effects in silicon avalanche diodes

Solid-State Electronics, 1974
Abstract Gain-voltage curves for reach-through avalanche photodiodes are computed using the ionization rate data of van Overstraeten and de Man and Lee et al. and compared with measured curves. Noise spectral density measurements are also made and compared with McIntyre's avalanche noise theory.
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Dynamic Effects of Avalanche-Generated Carriers.

1979
Abstract : Dynamic effects of avalanche-generated carriers in transistors were investigated using a two-dimensional, time-domain computer program. Basic properties of MESFET logic devices were also studied. The primary effect of avalanche process on bipolar transistor was found to be the majority carrier current in the lateral direction of the base ...
W. Tantraporn, S. P. Yu
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Radiation Effects on Silicon Avalanche (Impatt) Diodes

IEEE Transactions on Nuclear Science, 1968
The effects of fast neutrons with fluences up to 1016 n/cm2 on both dc and microwave characteristics of nearly abrupt X-band avalanche diodes have been studied. Good forward dc characteristics were observed up to 2×1015 n/cm2. At higher doses, the forward characteristics are degraded by the formation of a thin intrinsic layer at the metallurgical PN ...
D. K. Wilson, H. S. Lee, H. Noffke
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Creation of Interface States by Avalanche Effect

6th Annual Reliability Physics Symposium (IEEE), 1967
Charge and interface states are introduced into the oxide in an MOS capacitor by producing avalanche break-down at the semiconductor surface. Both the charge trapped in the oxide and the interface states can be annealed out at low temperatures.
E. H. Nicollian, A. Goetzberger
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Acoustic superradiance, phonon avalanche, and propagation effects

Physics Letters A, 1979
Abstract New quantum equations for superradiance in extended systems are presented, and some preliminary considerations concerning the possibility for acoustic superradiance to prevail over incoherent phonon avalanche are developed.
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Temperature effects in reverse-type avalanche photodiodes

2007 IEEE Nuclear Science Symposium Conference Record, 2007
The present paper shows ionization coefficient ratios, k values, kt and keffs of reverse-type Si avalanche photodiode. Both of keff and K1, tend to increase when APDs are cooled down. The results for keff are 0.0023 plusmn 0.0002 at 20degC, 0.0027 plusmn 0.0003 at 0degC, and 0.0049 plusmn 0.0007 at -20degC. With the result of k1, temperature dependency
null Mitsuhiro Sato, null Takayuki Yanagida, null Akira Yoshikawa, null Yoichi Yatsu, null Jun Kataoka, null Fumio Saito   +5 more
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Avalanche effect performance test on AES algorithm

2011 Second International Conference on Mechanic Automation and Control Engineering, 2011
The avalanche effect is an important performance that any block cipher must have. With the AES algorithm program and experiments, we fully test and research the avalanche effect performance of the AES algorithm, and give the changed cipher-bit numbers when respectively changing every bit of the plaintext and key in turn.
null Yuanqing Deng, null Hui Shi, null Jing Gong, null Tao Xie   +3 more
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Photon avalanche effect in doped quantum wells

Journal of Luminescence, 2001
Abstract A system of n-doped quantum wells is considered. The system is illuminated by IR radiation with frequency ω resonant to the transition between the second and third size-quantized subbands. At low light intensities j , the excitation does not induce any intersubband transitions.
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Avalanche-enhanced self-electro-optic-effect device

Optical Society of America Annual Meeting, 1992
The ability to enhance optical nonlinearities associated with the photogeneration of free carriers can be accomplished with carrier multiplication. The gain mechanism provided by carrier multiplication is inherently feasible in avalanche photodiodes.
Suzanne M. Horbatuck, Thomas G. Brown
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Electronic Tuning Effects in the Read Microwave Avalanche Diode

IEEE Transactions on Electron Devices, 1966
Read's theory of the negative-resistance avalanche diode has been examined in detail for the small-signal case. The space-charge wave approach has been used in the analysis leading directly to a simple equivalent circuit and a general expression for the small-signal impedance which includes the significant design and operating parameters.
M. Gilden, M.E. Hines
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