We investigate the feasibility of single and entangled photon-based quantum key distribution protocols at telecommunication wavelengths with two types of single photon detectors, namely InGaAs/InP and Silicon-APD, under various realistic conditions.
Vishal Sharma
doaj +1 more source
CMOS‐Compatible Short‐Wave Infrared Linear Arrays of Ge‐on‐Si Avalanche Photodiodes
Germanium‐containing short‐wave infrared (SWIR) avalanche photodiode (APD) arrays on silicon platforms have the potential for monolithic integration into complementary metal‐oxide‐semiconductor (CMOS) integrated circuits, making them mass‐manufacturable,
Mrudul Modak +15 more
doaj +1 more source
Optimization Strategy of 4H-SiC Separated Absorption Charge and Multiplication Avalanche Photodiode Structure for High Ultraviolet Detection Efficiency. [PDF]
Kou J +6 more
europepmc +1 more source
A Three-Terminal Si-Ge Avalanche Photodiode with a Breakdown Voltage of 6.8 V and a Gain Bandwidth Product of 1377 GHz. [PDF]
Cheng C, Xue J, Yu X, Mu J, Wang B.
europepmc +1 more source
Temporal and spatial multiplexed infrared single-photon counter based on high-speed avalanche photodiode. [PDF]
Chen X +6 more
europepmc +1 more source
Development of Gated Pinned Avalanche Photodiode Pixels for High-Speed Low-Light Imaging. [PDF]
Resetar T +6 more
europepmc +1 more source
Sensitivity and Performance of Uncooled Avalanche Photodiode for Thermoluminescent Dosimetry Applications. [PDF]
Sobotka P +6 more
europepmc +1 more source
Robust Pixel Design Methodologies for a Vertical Avalanche Photodiode (VAPD)-Based CMOS Image Sensor. [PDF]
Inoue A +24 more
europepmc +1 more source
Low-temperature-dependent property in an avalanche photodiode based on GaN/AlN periodically-stacked structure. [PDF]
Zheng J +13 more
europepmc +1 more source
Room-Temperature (RT) Extended Short-Wave Infrared (e-SWIR) Avalanche Photodiode (APD) with a 2.6 µm Cutoff Wavelength. [PDF]
Benker M +9 more
europepmc +1 more source

