Numerical simulation of neutron radiation effects in avalanche photodiodes
A new one-dimensional (1-D) device model developed for the simulation of neutron radiation effects in silicon avalanche photodiodes is described. The model uses a finite difference technique to solve the time-independent semiconductor equations across a ...
Osborne, M, Watts, SJ, Hobson, PR
core +1 more source
Modeling of the characteristics of an avalanche photodiode taking into account the influence of the directed energy of the electromagnetic field [PDF]
The paper presents and discusses the results of simulation of the current-voltage characteristics of an avalanche photodiode carried out in the SPICE program.
Jacek Dąbrowski, Janusz Zarębski
doaj +1 more source
3D Simple Monte Carlo Statistical Model for GaAs Nanowire Single Photon Avalanche Diode
GaAs based nanowire single photon avalanche diode (SPAD) has been demonstrated with extremely small afterpulsing probability and low dark count rate, and hence it has attracted wide attention for the near infrared applications.
Shiyu Xie +3 more
doaj +1 more source
HgCdTe e-avalanche photodiode detector arrays
Initial results on the MWIR e-APD detector arrays with 30 μm pitch fabricated on LPE grown compositionally graded p-HgCdTe epilayers are presented. High dynamic resistance times active area (R0A) product 2 × 106 Ω-cm2, low dark current density 4 nA/cm2 ...
Anand Singh, A. K. Shukla, Ravinder Pal
doaj +1 more source
Photodetector device for fiber optical telecommunication systems
The properties of a photodetector device with a balanced photodetector, which includes an avalanche silicon photodiode with the Schottky barrier, have been analyzed in this work. Considered here are advantages of the analyzed semiconductor photodetectors
N.O. Andreyeva
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Research on the Metasurface for Single-Photon Avalanche Photodiode
As the core device of the quantum information field, the single photon avalanche photodiode (SPAD) is a solid-state single photon detector with a pico-second level time-resolution, low bias voltage, high signal-to-noise ratio, and a low cost.
Linyao Chen +8 more
doaj +1 more source
Extremely Low Excess Noise Avalanche Photodiode with GaAsSb Absorption Region and AlGaAsSb Avalanche Region [PDF]
An extremely low noise Separate Absorption and Multiplication Avalanche Photodiode (SAM-APD), consisting of a GaAs0.52Sb0.48 absorption region and an Al0.85Ga0.15As0.56Sb0.44 avalanche region, is reported. The device incorporated an appropriate doping
Tarick Osman (7466135) +17 more
core +1 more source
Intensity-based laser distance measurement system using 2D electromagnetic scanning micromirror
In this research, we present the feasibility testing results of a simple distance measurement system using microfabricated scanning micromirrors. Two different configurations have been tested with different types of micromirrors.
Kyoungeun Kim +2 more
doaj +1 more source
A Near-Infrared Enhanced Field-Line Crowding Based CMOS-Integrated Avalanche Photodiode
This paper presents a CMOS-integrated linear-mode avalanche photodiode based on electric field-line crowding (EFLC-APD) to form an effective multiplication zone and a wide absorption zone. The EFLC-APD possesses a hemispherical avalanching electric field
Seyed Saman Kohneh Poushi +5 more
doaj +1 more source
Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application
This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong +12 more
wiley +1 more source

