Results 31 to 40 of about 7,200 (227)

Free-Space Optical Data Receivers with Avalanche Detectors for Satellite Downlinks Regarding Background Light

Sensors, 2022
Data receiving frontends using avalanche photodiodes are used in optical free-space communications for their effective sensitivity, large detection area, and uncomplex operation.
Dirk Giggenbach
doaj   +1 more source

AlGaAsSb Avalanche Photodiodes

2018 IEEE Photonics Conference (IPC), 2018
Avalanche photodiodes are widely used in optical receivers for high-speed communication systems. We have been studying the material AlGaAsSb (lattice-matched to InP substrates) experimentally in recent years, evaluating its potential as an alternative avalanche material for these avalanche photodiodes. Our experimental studies cover key characteristics
Ng, J.S., Tan, C.H.
openaire   +2 more sources

Ge-on-Si single-photon avalanche diode detectors: design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm [PDF]

, 2013
The design, modeling, fabrication, and characterization of single-photon avalanche diode detectors with an epitaxial Ge absorption region grown directly on Si are presented.
Lever, LJM, Paul, D.J., Buller, GS, Ikonic, Zoran, Warburton, Ryan E, Ikonic, Z, Myronov, Maksym, Knights, AP, Leadley, D. R. (David R.), Gallacher, Kevin, Kelsall, Robert W., Pilgrim, Neil J, Pilgrim, NJ, Paul, DJ, Myronov, M., Paul, Douglas J. (Professor of Semiconductor Devices), Allred, P, Intermite, G., Leadley, David R, Huante-Ceron, E, Kelsall, RW, Lever, Leon J M, Pilgrim, Neil J., Kelsall, R.W., Allred, P., Myronov, M, Huante-Ceron, Edgar, Lever, Leon J. M., Lever, L.J.M., Leadley, D.R., Knights, A.P., Knights, Andrew P., Allred, Phil, Ikonic, Z., Huante-Ceron, E., Warburton, RE, Knights, Andrew P, Pilgrim, N.J., Buller, G.S., Intermite, G, Paul, Douglas J, Warburton, Ryan E., Leadley, DR, Intermite, Giuseppe, Gallacher, K, Warburton, R.E., Buller, G. S. (Gerald S.), Kelsall, Robert W, Buller, Gerald Stuart   +48 more
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Generic radiation hardened photodiode layouts for deep submicron CMOS image sensor processes [PDF]

, 2011
Selected radiation hardened photodiode layouts, manufactured in a deep submicron CMOS Image Sensor technology, are irradiated by 60Co gamma-rays up to 2.2 Mrad(SiO2) and studied in order to identify the most efficient structures and the guidelines ...
V. Goiffon, Goiffon, Vincent, Corbière, Franck, C. Virmontois, P. Magnan, Estribeau, Magali, F. Corbiere, Virmontois, Cédric, M. Estribeau, Cervantes, Paola, P. Cervantes, Magnan, Pierre   +11 more
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Advances in near-infrared avalanche diode single-photon detectors

Chip, 2022
Avalanche-photodiode-based near-infrared single-photon detectors have seen rapid development in the last two decades because of their enormous internal gain, high sensitivity, fast response, small volume, and ease of integration.
Chen Liu, Hai-Feng Ye, Yan-Li Shi
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Free-Running Single-Photon Detection via GHz Gated InGaAs/InP APD for High Time Resolution and Count Rate up to 500 Mcount/s

Micromachines, 2023
Free-running InGaAs/InP single-photon avalanche photodiodes (SPADs) typically operate in the active-quenching mode, facing the problems of long dead time and large timing jitter.
Wen Wu, Xiao Shan, Yaoqiang Long, Jing Ma, Kun Huang, Ming Yan, Yan Liang, Heping Zeng   +7 more
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Surface passivation of random alloy AlGaAsSb avalanche photodiode

Electronics Letters, 2023
AlGaAsSb attracts significant interest for near‐infrared avalanche photodiodes (APD). The authors report a two‐order reduction in the dark current and a six‐time enhancement of gain in random alloy (RA) AlGaAsSb APD that is surface passivated by ...
Peng Cao, Hongling Peng, Tiancai Wang, Vibha Srivastava, Manoj Kesaria, Minghui You, Qiandong Zhuang, Wanhua Zheng   +7 more
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Thin Al1−xGaxAs0.56Sb0.44 diodes with extremely weak temperature dependence of avalanche breakdown [PDF]

Royal Society Open Science, 2017
When using avalanche photodiodes (APDs) in applications, temperature dependence of avalanche breakdown voltage is one of the performance parameters to be considered. Hence, novel materials developed for APDs require dedicated experimental studies.
Xinxin Zhou, Chee Hing Tan, Shiyong Zhang, Manuel Moreno, Shiyu Xie, Salman Abdullah, Jo Shien Ng   +6 more
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A Nearly Interference-Free and Depth-Resolution-Configurable Time-of-Flight System Based on a Mega-Pixel Vertical Avalanche Photodiodes CMOS Image Sensor

IEEE Open Journal of Circuits and Systems, 2022
We present a long range (~250 m) time-of flight (TOF) system with suppressed (nearly-free) mutual-interference. The system is based on a $1296\times960$ pixels vertical avalanche photodiodes (VAPD) CMOS image sensor (CIS).
Shota Yamada, Motonori Ishii, Shigetaka Kasuga, Masato Takemoto, Hiromu Kitajima, Toru Okino, Yusuke Sakata, Manabu Usuda, Yugo Nose, Hiroshi Koshida, Masaki Tamaru, Akito Inoue, Yuki Sugiura, Shigeru Saito, Taiki Kunikyo, Yusuke Yuasa, Kentaro Nakanishi, Naoki Torazawa, Takashi Shirono, Tatsuya Kabe, Shinzo Koyama, Mitsuyoshi Mori, Yutaka Hirose, Masayuki Sawada, Akihiro Odagawa, Tsuyoshi Tanaka   +25 more
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Superlattice avalanche photodiodes

Conference Proceedings. LEOS '97. 10th Annual Meeting IEEE Lasers and Electro-Optics Society 1997 Annual Meeting, 1997
Summary form only given. InGaAsP-InAlAs superlattice avalanche photodiode (SL-APD) is applied to the receiver of the analog video transmission as well as to the high-bit-rate digital transmission. The low noise, wide bandwidth, low distortion, and wide dynamic range characteristics of the SL-APD are fully exploited in the video transmission system. All
openaire   +1 more source