Results 21 to 30 of about 7,200 (227)

Geiger-Mode Avalanche Photodiode Arrays Integrated to All-Digital CMOS Circuits [PDF]

Sensors, 2016
This article reviews MIT Lincoln Laboratory's work over the past 20 years to develop photon-sensitive image sensors based on arrays of silicon Geiger-mode avalanche photodiodes.
Brian Aull
doaj   +2 more sources

SIMULATION OF AVALANCHE PHOTODIODE CONSTRUCTION WITH GUARD AREAS

Приборы и методы измерений, 2015
Construction and breakdown voltage of avalanche photodiode with Read diode structure was simulated by computer. It was shown that the guard area construction composed of the metal electrode and guard rings influences on the electrical quantities of n+-p ...
N. N. Koritko, V. B. Zalesskij, V. S. Malishev, V. V. Khatko   +3 more
doaj   +2 more sources

LOW NOISE ELECTRONICS MODULE FOR AVALANCHE PHOTODIODE SIGNAL READOUT

Приборы и методы измерений, 2015
Schematic and design of electronics module for avalanche photodiode signal′s readout based on the pair of specialized analog ICs, are considered. Main specifications including input noise charge vs signal source capacity are presented.
O. V. Dvornikov, V. A. Tchekhovski, V. L. Diatlov, N. N. Prokopenko   +3 more
doaj   +1 more source

Progress in Avalanche Photodiodes for Laser Ranging. [PDF]

Sensors (Basel)
Laser ranging is a high-precision geodetic technique that plays an indispensable role in the field of geodynamics. Avalanche photodiodes (APDs) offer a series of advantages over other photodetector technologies, including photomultiplier tubes (PMTs) and superconducting single-photon detectors (SNSPDs).
Liu Z, An N, Han X, Nuñez NE, Jin L, Liu C.   +5 more
europepmc   +4 more sources

Avalanche Photodiodes with Dual Multiplication Layers for High-Speed and Wide Dynamic Range Performances

Photonics, 2021
In this work, we demonstrate In0.52Al0.48As top/backside-illuminated avalanche photodiodes (APD) with dual multiplication layers for high-speed and wide dynamic range performances. Our fabricated top-illuminated APDs, with a partially depleted p-type In0.
Naseem, Zohauddin Ahmad, Yan-Min Liao, Rui-Lin Chao, Po-Shun Wang, Yi-Shan Lee, Sean Yang, Sheng-Yun Wang, Hsiang-Szu Chang, Hung-Shiang Chen, Jack Jia-Sheng Huang, Emin Chou, Yu-Heng Jan, Jin-Wei Shi   +13 more
doaj   +1 more source

VLC Using 800-μm Diameter APD Receiver Integrated in Standard 0.35-μm BiCMOS Technology

IEEE Photonics Journal, 2021
The fully integrated 800 μm. diameter avalanche photodiode optical receiver is implemented in 0.35 μm BiCMOS technology without any process modifications.
D. Milovancev, T. Jukic, N. Vokic, P. Brandl, B. Steindl, H. Zimmermann   +5 more
doaj   +1 more source

Enhanced gain and detectivity of unipolar barrier solar blind avalanche photodetector via lattice and band engineering

Nature Communications, 2023
The limited breakdown electric field and the high dark current hider the application of solar blind avalanche photodiodes. Here, Zhang et al., by lattice and band engineering, construct a unipolar barrier avalanche photodiode with suppressed dark current
Qingyi Zhang, Ning Li, Tao Zhang, Dianmeng Dong, Yongtao Yang, Yuehui Wang, Zhengang Dong, Jiaying Shen, Tianhong Zhou, Yuanlin Liang, Weihua Tang, Zhenping Wu, Yang Zhang, Jianhua Hao   +13 more
doaj   +1 more source

Valence band engineering of GaAsBi for low noise avalanche photodiodes

Nature Communications, 2021
An avalanche photodiode is an opto-electronic amplifier that uses impact ionization to provide enhanced sensitivity at the expense of excess noise. In this manuscript, the authors demonstrate that a small amount of Bismuth (Bi) in Gallium Arsenide (GaAs)
Yuchen Liu, Xin Yi, Nicholas J. Bailey, Zhize Zhou, Thomas B. O. Rockett, Leh W. Lim, Chee H. Tan, Robert D. Richards, John P. R. David   +8 more
doaj   +1 more source

Inverted p-down Design for High-Speed Photodetectors

Photonics, 2021
We discuss the structural consideration of high-speed photodetectors used for optical communications, focusing on vertical illumination photodetectors suitable for device fabrication and optical coupling.
Masahiro Nada, Fumito Nakajima, Toshihide Yoshimatsu, Yasuhiko Nakanishi, Atsushi Kanda, Takahiko Shindo, Shoko Tatsumi, Hideaki Matsuzaki, Kimikazu Sano   +8 more
doaj   +1 more source

Subthreshold Operation of Photodiode-Gated Transistors Enabling High-Gain Optical Sensing and Imaging Applications

IEEE Journal of the Electron Devices Society, 2020
In optical sensors and imagers, high gain that leads to high sensitivity and high signal to noise ratio (SNR) is often desirable. One popular approach is avalanche photomultiplication initiated by impact ionization in an avalanche photodiode or similar ...
Kai Wang, Yihong Qi, Yunfeng Hu, Yangbing Xu, Yitong Xu, Jinming Liu, Xianda Zhou   +6 more
doaj   +1 more source