Results 21 to 30 of about 5,067 (184)
Surface passivation of random alloy AlGaAsSb avalanche photodiode
Electronics Letters, 2023 AlGaAsSb attracts significant interest for near‐infrared avalanche photodiodes (APD). The authors report a two‐order reduction in the dark current and a six‐time enhancement of gain in random alloy (RA) AlGaAsSb APD that is surface passivated by ...
Peng Cao +7 more
doaj +1 more source
Micromachines, 2023 Free-running InGaAs/InP single-photon avalanche photodiodes (SPADs) typically operate in the active-quenching mode, facing the problems of long dead time and large timing jitter.
Wen Wu +7 more
doaj +1 more source
IEEE Open Journal of Circuits and Systems, 2022 We present a long range (~250 m) time-of flight (TOF) system with suppressed (nearly-free) mutual-interference. The system is based on a $1296\times960$ pixels vertical avalanche photodiodes (VAPD) CMOS image sensor (CIS).
Shota Yamada +25 more
doaj +1 more source
Thin Al1−xGaxAs0.56Sb0.44 diodes with extremely weak temperature dependence of avalanche breakdown [PDF]
Royal Society Open Science, 2017 When using avalanche photodiodes (APDs) in applications, temperature dependence of avalanche breakdown voltage is one of the performance parameters to be considered. Hence, novel materials developed for APDs require dedicated experimental studies.
Xinxin Zhou +6 more
doaj +1 more source
3D Simple Monte Carlo Statistical Model for GaAs Nanowire Single Photon Avalanche Diode
IEEE Photonics Journal, 2020 GaAs based nanowire single photon avalanche diode (SPAD) has been demonstrated with extremely small afterpulsing probability and low dark count rate, and hence it has attracted wide attention for the near infrared applications.
Shiyu Xie +3 more
doaj +1 more source
AlGaAsSb Avalanche Photodiodes
2018 IEEE Photonics Conference (IPC), 2018 Avalanche photodiodes are widely used in optical receivers for high-speed communication systems. We have been studying the material AlGaAsSb (lattice-matched to InP substrates) experimentally in recent years, evaluating its potential as an alternative avalanche material for these avalanche photodiodes. Our experimental studies cover key characteristics
Ng, J.S., Tan, C.H.
openaire +2 more sources
Photodetector device for fiber optical telecommunication systems
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2019 The properties of a photodetector device with a balanced photodetector, which includes an avalanche silicon photodiode with the Schottky barrier, have been analyzed in this work. Considered here are advantages of the analyzed semiconductor photodetectors
N.O. Andreyeva
doaj +1 more source
HgCdTe e-avalanche photodiode detector arrays
AIP Advances, 2015 Initial results on the MWIR e-APD detector arrays with 30 μm pitch fabricated on LPE grown compositionally graded p-HgCdTe epilayers are presented. High dynamic resistance times active area (R0A) product 2 × 106 Ω-cm2, low dark current density 4 nA/cm2 ...
Anand Singh, A. K. Shukla, Ravinder Pal
doaj +1 more source
Research on the Metasurface for Single-Photon Avalanche Photodiode
Frontiers in Physics, 2020 As the core device of the quantum information field, the single photon avalanche photodiode (SPAD) is a solid-state single photon detector with a pico-second level time-resolution, low bias voltage, high signal-to-noise ratio, and a low cost.
Linyao Chen +8 more
doaj +1 more source
Giant Electrostriction in Halide Perovskites Revisited With Double‐Modulation Interferometry
Advanced Functional Materials, EarlyView.A giant electrostrictive effect in lead halide perovskites had been reported previously. This work uses sensitive interferometry to measure the electromechanical response of various halide perovskite samples. The results reveal no intrinsic electrostrictive compression. Instead, the materials expand primarily under an applied electric field as a result
Philipp Ramming +4 more
wiley +1 more source