Results 11 to 20 of about 5,067 (184)

RETRACTED: Research on dispersion compensation using avalanche photodiode and pin photodiode

IET Collaborative Intelligent Manufacturing, 2021
With the growing demand for usage among Internet users, inventions related to increase in the capacity and bandwidth of transmission channels are more significant nowadays.
Yanxia Ma, Qinghui Chen, Shuyan Wang, Shalini Sharma, Shaweta Khanna   +4 more
doaj   +1 more source

VLC Using 800-μm Diameter APD Receiver Integrated in Standard 0.35-μm BiCMOS Technology

IEEE Photonics Journal, 2021
The fully integrated 800 μm. diameter avalanche photodiode optical receiver is implemented in 0.35 μm BiCMOS technology without any process modifications.
D. Milovancev, T. Jukic, N. Vokic, P. Brandl, B. Steindl, H. Zimmermann   +5 more
doaj   +1 more source

Enhanced gain and detectivity of unipolar barrier solar blind avalanche photodetector via lattice and band engineering

Nature Communications, 2023
The limited breakdown electric field and the high dark current hider the application of solar blind avalanche photodiodes. Here, Zhang et al., by lattice and band engineering, construct a unipolar barrier avalanche photodiode with suppressed dark current
Qingyi Zhang, Ning Li, Tao Zhang, Dianmeng Dong, Yongtao Yang, Yuehui Wang, Zhengang Dong, Jiaying Shen, Tianhong Zhou, Yuanlin Liang, Weihua Tang, Zhenping Wu, Yang Zhang, Jianhua Hao   +13 more
doaj   +1 more source

Valence band engineering of GaAsBi for low noise avalanche photodiodes

Nature Communications, 2021
An avalanche photodiode is an opto-electronic amplifier that uses impact ionization to provide enhanced sensitivity at the expense of excess noise. In this manuscript, the authors demonstrate that a small amount of Bismuth (Bi) in Gallium Arsenide (GaAs)
Yuchen Liu, Xin Yi, Nicholas J. Bailey, Zhize Zhou, Thomas B. O. Rockett, Leh W. Lim, Chee H. Tan, Robert D. Richards, John P. R. David   +8 more
doaj   +1 more source

Inverted p-down Design for High-Speed Photodetectors

Photonics, 2021
We discuss the structural consideration of high-speed photodetectors used for optical communications, focusing on vertical illumination photodetectors suitable for device fabrication and optical coupling.
Masahiro Nada, Fumito Nakajima, Toshihide Yoshimatsu, Yasuhiko Nakanishi, Atsushi Kanda, Takahiko Shindo, Shoko Tatsumi, Hideaki Matsuzaki, Kimikazu Sano   +8 more
doaj   +1 more source

Subthreshold Operation of Photodiode-Gated Transistors Enabling High-Gain Optical Sensing and Imaging Applications

IEEE Journal of the Electron Devices Society, 2020
In optical sensors and imagers, high gain that leads to high sensitivity and high signal to noise ratio (SNR) is often desirable. One popular approach is avalanche photomultiplication initiated by impact ionization in an avalanche photodiode or similar ...
Kai Wang, Yihong Qi, Yunfeng Hu, Yangbing Xu, Yitong Xu, Jinming Liu, Xianda Zhou   +6 more
doaj   +1 more source

Automated Characterization of Single-Photon Avalanche Photodiode

International Islamic University Malaysia Engineering Journal, 2012
We report an automated characterization of a single-photon detector based on commercial silicon avalanche photodiode (PerkinElmer C30902SH). The photodiode is characterized by I-V curves at different illumination levels (darkness, 10 pW and 10 µW), dark ...
Aina Mardhiyah M. Ghazali, Audun Nystad Bugge, Sebastien Sauge, Vadim Makarov   +3 more
doaj   +1 more source

Free-Space Optical Data Receivers with Avalanche Detectors for Satellite Downlinks Regarding Background Light

Sensors, 2022
Data receiving frontends using avalanche photodiodes are used in optical free-space communications for their effective sensitivity, large detection area, and uncomplex operation.
Dirk Giggenbach
doaj   +1 more source

Interface Electric Field Confinement Effect of High-Sensitivity Lateral Ge/Si Avalanche Photodiodes

Tsinghua Science and Technology, 2019
A novel lateral Ge/Si avalanche photodiode without a charge region is investigated herein using device physical simulation. High field is provided by the band-gap barrier and build-in field at the Ge/Si interface in the vertical direction. Modulating the
Wenzhou Wu, Zhi Liu, Jun Zheng, Yuhua Zuo, Buwen Cheng   +4 more
doaj   +1 more source

Advances in near-infrared avalanche diode single-photon detectors

Chip, 2022
Avalanche-photodiode-based near-infrared single-photon detectors have seen rapid development in the last two decades because of their enormous internal gain, high sensitivity, fast response, small volume, and ease of integration.
Chen Liu, Hai-Feng Ye, Yan-Li Shi
doaj   +1 more source