Results 71 to 80 of about 22,526 (196)

Modelling of High Quantum Efficiency Avalanche Photodiode

open access: yesIranian Journal of Electrical and Electronic Engineering, 2019
A model of a low noise high quantum efficiency n+np Germanium Photodiode utilizing ion implantation technique and subsequent drive-in diffusion in the n layer is presented.
T. Baldawi, A. Abuelhaija
doaj  

4H-SiC SACM Avalanche Photodiode With Low Breakdown Voltage and High UV Detection Efficiency

open access: yesIEEE Photonics Journal, 2016
In this paper, a high-performance 4H-SiC separated absorption charge multiplication ultraviolet avalanche photodiode (APD) with low breakdown voltage is designed and fabricated. The room temperature dark current of the APD remains at ∼0.1 pA level
Xiaolong Cai   +7 more
doaj   +1 more source

A novel active quenching circuit for single photon detection with Geiger mode avalanche photodiodes

open access: yes, 2008
In this paper we present a novel construction of an active quenching circuit intended for single photon detection. For purpose of evaluation, we have combined this circuit with a standard avalanche photodiode C30902S to form a single photon detector.
Brown   +16 more
core   +1 more source

Crosstalk Analysis of SiC Ultraviolet Single Photon Avalanche Photodiode Arrays

open access: yesIEEE Photonics Journal, 2019
Optical crosstalk is one of major problems limiting the performance of focal plane arrays based on single photon avalanche diodes (SPADs). In this work, for the first time the crosstalk characteristics of a 4H-SiC SPAD linear array are studied, which is ...
Heng Zhang   +8 more
doaj   +1 more source

Micromegas operation in high pressure xenon: charge and scintillation readout

open access: yes, 2010
The operational characteristics of a Micromegas operating in pure xenon at the pressure range of 1 to 10 bar are investigated. The maximum charge gain achieved in each pressure is approximately constant, around 4x10^2, for xenon pressures up to 5 bar and
  +18 more
core   +1 more source

Illumination Induced Negative Differential Resistance in InGaAs Avalanche Photodiode

open access: yesIEEE Access
This work presents a novel InGaAs/InP avalanche photodiode, fabricated in the separate absorption, grading, charge, and multiplication configuration operated at non-cryogenic conditions under low-frequency ramp gating.
Afshan Khaliq   +9 more
doaj   +1 more source

Area and Bandwidth Enhancement of an n+/p-Well Dot Avalanche Photodiode in 0.35 μm CMOS Technology. [PDF]

open access: yesSensors (Basel), 2023
Kohneh Poushi SS   +4 more
europepmc   +1 more source

Microchannel avalanche photodiode with wide linearity range

open access: yes, 2010
Design and physical operation principles of new microchannel avalanche photodiode (MC APD) with gain up to 10^5 and linearity range improved an order of magnitude compared to known similar devices.
A. Dovlatov   +16 more
core   +1 more source

InGaAs Communication Photodiodes: From Low- to High-Power-Level Designs

open access: yesIEEE Photonics Journal, 2010
While InGaAs absorption material has been used for various applications up to 1.6-μm wavelength, specific designs for low-level detection have become of main interest using high responsivity and low-dark-current detectors.
M. Achouche   +5 more
doaj   +1 more source

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