Results 91 to 100 of about 16,481 (212)

Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications

Advanced Functional Materials, Volume 36, Issue 20, 9 March 2026.
Quantum emitters in hexagonal boron nitride have emerged as a promising candidate for quantum information science. This review examines the fundamentals of these quantum emitters, including their level structures, defect engineering, and their possible chemical structures.
Thi Ngoc Anh Mai, Md Shakhawath Hossain, Nhat Minh Nguyen, Yongliang Chen, Chaohao Chen, Xiaoxue Xu, Quang Thang Trinh, Toan Dinh, Toan Trong Tran   +8 more
wiley   +1 more source

Active gating as a method to inhibit the crosstalk of Single Photon Avalanche Diodes in a shared well [PDF]

, 2016
This work presents low noise readout circuits for silicon pixel detectors based on Geiger mode avalanche photodiodes. Geiger mode avalanche photodiodes offer a high intrinsic gain as well as an excellent timing accuracy.
Alonso Casanovas, Oscar, Diéguez Barrientos, Àngel, Montiel, Andreu, Vilella Figueras, Eva, Vilà i Arbonès, Anna Maria   +4 more
core   +1 more source

Photoactivation of NV Centers in Diamond via Continuous Wave Laser Illumination of Shallow As‐Implanted Nitrogen

Advanced Functional Materials, Volume 36, Issue 20, 9 March 2026.
This study demonstrates an alternative method of creating charge‐stable negatively charged nitrogen vacancy (NV−) centers close to the diamond surface without high‐temperature annealing. By illuminating nitrogen‐implanted regions with a continuous‐wave 405 nm laser, NV− centers are induced, exhibiting electron spin coherence properties suitable for ...
Jens Fuhrmann, Christoph Findler, Michael Olney‐Fraser, Lev Kazak, Fedor Jelezko   +4 more
wiley   +1 more source

Full band Monte Carlo simulation of AlInAsSb digital alloys

InfoMat, 2020
Avalanche photodiodes fabricated from AlInAsSb grown as a digital alloy exhibit low excess noise. In this article, we investigate the band structure‐related mechanisms that influence impact ionization.
Jiyuan Zheng, Sheikh Z. Ahmed, Yuan Yuan, Andrew Jones, Yaohua Tan, Ann K. Rockwell, Stephen D. March, Seth R. Bank, Avik W. Ghosh, Joe C. Campbell   +9 more
doaj   +1 more source

Shot Noise Suppression in Avalanche Photodiodes

, 2005
We identify a new shot noise suppression mechanism in a thin (~100 nm) heterostructure avalanche photodiode. In the low-gain regime the shot noise is suppressed due to temporal correlations within amplified current pulses. We demonstrate in a Monte Carlo
A. van der Ziel, Feng Ma, Joe C. Campbell, R. J. McIntyre, Shuling Wang   +4 more
core   +1 more source

An Improved Design for Solar-Blind AlGaN Avalanche Photodiodes

IEEE Photonics Journal, 2017
To enhance the impact ionization coefficient of holes, we proposed an improved solar-blind AlGaN avalanche photodiode (APD) structure by using a low-Al-composition AlGaN multiplication layer and a filter based on periodic photonic crystal together with a
Qing Cai, Mei Ge, Junjun Xue, Liqun Hu, Dunjun Chen, Hai Lu, Rong Zhang, Youdou Zheng   +7 more
doaj   +1 more source

Gigacount/second photon detection with InGaAs avalanche photodiodes

, 2012
We demonstrate high count rate single photon detection at telecom wavelengths using a thermoelectrically-cooled semiconductor diode. Our device consists of a single InGaAs avalanche photodiode driven by a 2 GHz gating frequency signal and coupled to a ...
Dynes, J. F., Patel, K. A., Penty, R. V., Sharpe, A. W., Shields, A. J., Yuan, Z. L.   +5 more
core   +1 more source

High-temperature mid-wavelength infrared avalanche photodiode with modified fully-depleted absorption and multiplication region

Communications Materials
Mid-wavelength infrared (MWIR) avalanche photodiodes (APD) are extensively employed in high-precision detection and thermal imaging in complex context.
Liqi Zhu, Zihao Wang, Jiamu Lin, Jian Huang, Linxuan He, Xi Wang, Songmin Zhou, Zhikai Gan, Xun Li, Qingxin Li, Li He, Changqing Lin, Chun Lin, Baile Chen   +13 more
doaj   +1 more source

An InGaAs/AlAsSb Avalanche Photodiode With a Small Temperature Coefficient of Breakdown

IEEE Photonics Journal, 2013
Dark current and avalanche gain M on AlAs0.56Sb0.44 (hereafter referred to as AlAsSb) separate absorption multiplication (SAM) avalanche photodiodes (APDs) were measured at temperatures ranging from 77 K to 300 K. To avoid possible ambiguity in breakdown
Jingjing Xie, Jo Shien Ng, Chee Hing Tan
doaj   +1 more source

Photon counting for quantum key distribution with Peltier cooled InGaAs/InP APD's

, 2001
The performance of three types of InGaAs/InP avalanche photodiodes is investigated for photon counting at 1550 nm in the temperature range of thermoelectric cooling.
AndrÉ Stefanov, Damien Stucki, Gisin N., GrÉGoire Ribordy, Hughes R., Hugo Zbinden, John G. Rarity, Ribordy G., Tom Wall   +8 more
core   +2 more sources