Results 151 to 160 of about 16,481 (212)

GaN avalanche photodiodes

Applied Physics Letters, 2000
We report the electrical and optical characteristics of avalanche photodiodes fabricated in GaN grown by metalorganic chemical vapor deposition. The current–voltage characteristics indicate a multiplication of >25. Experiment indicates and simulation verifies that the magnitude of the electric field at the onset of avalanche gain is ⩾3 MV/cm ...
J. C. Carrano, D. J. H. Lambert, C. J. Eiting, C. J. Collins, T. Li, S. Wang, B. Yang, A. L. Beck, R. D. Dupuis, J. C. Campbell   +9 more
openaire   +1 more source

Ultraviolet avalanche photodiodes

SPIE Proceedings, 2015
The III-Nitride material system is rapidly maturing; having proved itself as a material for LEDs and laser, and now finding use in the area of UV photodetectors. However, many UV applications are still dominated by the use of photomultiplier tubes (PMT).
Ryan McClintock, Manijeh Razeghi
openaire   +1 more source

SiC avalanche photodiodes

2007 International Semiconductor Device Research Symposium, 2007
Ultraviolet detectors are becoming increasingly important in medical, military, and environmental applications, including biological agent detection and non-line-of-sight (NLOS) communications. SiC avalanche photodiodes (APDs) are an attractive candidate for those applications that place a premium on detectors that are compact, rugged, and inexpensive.
Joe C. Campbell, null Han-Din Liu, Dion McIntosh, null Xiaogang Bai   +3 more
openaire   +1 more source

Electroabsorption avalanche photodiodes

Applied Physics Letters, 1974
Schottky barrier avalanche photodiodes have been fabricated on n-type high-purity epitaxial GaAs. These devices have their largest response at wavelengths beyond the usual absorption edge for high-purity materials. The absorption mechanism involves the Franz-Keldysh shift of the absorption edge, and the higher response at the longer wavelengths can be ...
G. E. Stillman, C. M. Wolfe, J. A. Rossi, J. P. Donnelly   +3 more
openaire   +1 more source

SiC Avalanche Photodiodes

2006 IEEE LEOS Annual Meeting Conference Proceedings, 2006
In summary, 4H- and 6HSiC avalanche photodiodes have been fabricated and characterized. These APDs exhibit low dark current, high uniform gain, low excess noise, and external quantum efficiency in excess of 50%
Joe Campbell, Xiangyi Guo, Han-din Liu, Dion McIntosh   +3 more
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Fluctuations in Avalanche Photodiode Structure

AIP Conference Proceedings, 2007
The number of primary photo‐electrons and the excess noise factor of the Avalanche photodiode (APD) are important parameters for the energy resolution of the crystal‐APD system. In the present paper, the mean signal value and its fluctuations have been investigated for the well defined silicon Hamamatsu S8148 APD structure as a function of incident ...
KOÇAK, FATMA, Tapan, Ilhan
openaire   +2 more sources

Delta-Doped Sagm-Avalanche Photodiodes

[1991] 49th Annual Device Research Conference Digest, 1991
Summary form only given. The fabrication of a delta-doped SAGM-APD is reported. The multiplication region is only 0.3 mu m thick. A gain-bandwidth product of 75 GHz has been achieved. Using a top-surface reflector, quantum efficiencies of over 70% have been obtained even though the absorption layer is only 1.1 mu m thick. >
R. Kuchibhotla, J.C. Campbell, C. Tsai, W.T. Tsang   +3 more
openaire   +1 more source

The HgCdTe electron avalanche photodiode

SPIE Proceedings, 2004
Electron injection avalanche photodiodes in short-wave infrared (SWIR) to long-wave infrared (LWIR) HgCdTe show gain and excess noise properties indicative of a single ionizing carrier gain process. The result is an electron avalanche photodiode (EAPD) with “ideal” APD characteristics including near noiseless gain.
J. Beck, C. Wan, M. Kinch, J. Robinson, P. Mitra, R. Scritchfield, F. Ma, J. Campbell   +7 more
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Superlattice avalanche photodiodes

Conference Proceedings. LEOS '97. 10th Annual Meeting IEEE Lasers and Electro-Optics Society 1997 Annual Meeting, 1997
Summary form only given. InGaAsP-InAlAs superlattice avalanche photodiode (SL-APD) is applied to the receiver of the analog video transmission as well as to the high-bit-rate digital transmission. The low noise, wide bandwidth, low distortion, and wide dynamic range characteristics of the SL-APD are fully exploited in the video transmission system. All
openaire   +1 more source

Avalanche speed in thin avalanche photodiodes

Journal of Applied Physics, 2003
The duration of the avalanche multiplication process in thin GaAs avalanche photodiodes is investigated using a full band Monte Carlo (FBMC) model. The results are compared with those of a simple random path length (RPL) model which makes the conventional assumptions of a displaced exponential for the ionization path length probability distribution ...
Ong, D. S., Rees, G. J., David, J. P. R.
openaire   +2 more sources