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GaInAsP/InP Avalanche Photodiodes*
Integrated and Guided Wave Optics, 1978An avalanche photodiode with high quantum efficiency in the 1.0-1.3 μm wavelength range will be an important component of IOCs to be used in this low loss, low dispersion regime of optical fiber transmission. In this paper we report for the first time the successful fabrication of avalanche photodiodes in the quaternary alloy GaInAsP, grown epitaxially
C. E. Hurwitz, J. J. Hsieh
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Fluctuations in Avalanche Photodiode Structure
AIP Conference Proceedings, 2007The number of primary photo‐electrons and the excess noise factor of the Avalanche photodiode (APD) are important parameters for the energy resolution of the crystal‐APD system. In the present paper, the mean signal value and its fluctuations have been investigated for the well defined silicon Hamamatsu S8148 APD structure as a function of incident ...
KOÇAK, FATMA, Tapan, Ilhan
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The HgCdTe electron avalanche photodiode
SPIE Proceedings, 2004Electron injection avalanche photodiodes in short-wave infrared (SWIR) to long-wave infrared (LWIR) HgCdTe show gain and excess noise properties indicative of a single ionizing carrier gain process. The result is an electron avalanche photodiode (EAPD) with “ideal” APD characteristics including near noiseless gain.
J. Beck +7 more
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Photon‐assisted avalanche spreading in reach‐through photodiodes
Applied Physics Letters, 1993 We have investigated the spreading of the avalanche process over the area of reach‐through avalanche photodiodes operated in Geiger mode. A comparison between the measurements and the results of a computer simulation suggests that photons emitted from ...
Andrea L Lacaita +2 more
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Recent advances in avalanche photodiodes
2006 Optical Fiber Communication Conference and the National Fiber Optic Engineers Conference, 2006The paper reports on recent work on avalanche photodiodes (APDs) which focused on developing new structures and incorporating alternative materials that will yield lower excess noise and higher speed while maintaining optimal gain levels.
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Ultraviolet avalanche photodiodes
SPIE Proceedings, 2015The III-Nitride material system is rapidly maturing; having proved itself as a material for LEDs and laser, and now finding use in the area of UV photodetectors. However, many UV applications are still dominated by the use of photomultiplier tubes (PMT).
Ryan McClintock, Manijeh Razeghi
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A model of the avalanche photodiode
IEEE Transactions on Electron Devices, 1967A general model for the avalanche photodiode is presented. It is shown that the diode consists of four regions: 1) guard ring, 2) uniform avalanche region, 3) high-field absorption region and 4) zero-field absorption region. Expressions are given for the ac quantum efficiency, the dc quantum efficiency, and the transit time cutoff frequency.
J.R. Biard, W.N. Shaunfield
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Electroabsorption avalanche photodiodes
Applied Physics Letters, 1974Schottky barrier avalanche photodiodes have been fabricated on n-type high-purity epitaxial GaAs. These devices have their largest response at wavelengths beyond the usual absorption edge for high-purity materials. The absorption mechanism involves the Franz-Keldysh shift of the absorption edge, and the higher response at the longer wavelengths can be ...
G. E. Stillman +3 more
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Noise effects in avalanche photodiodes
IEEE Transactions on Education, 2000The usual formula for the excess noise produced in a simple avalanche photodiode may be introduced in a particularly simple manner by taking advantage of the fact that the ionization coefficients usually encountered in practice are often regarded as constant throughout the device for any specific applied bias voltage.
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2006 IEEE LEOS Annual Meeting Conference Proceedings, 2006
In summary, 4H- and 6HSiC avalanche photodiodes have been fabricated and characterized. These APDs exhibit low dark current, high uniform gain, low excess noise, and external quantum efficiency in excess of 50%
Joe Campbell +3 more
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In summary, 4H- and 6HSiC avalanche photodiodes have been fabricated and characterized. These APDs exhibit low dark current, high uniform gain, low excess noise, and external quantum efficiency in excess of 50%
Joe Campbell +3 more
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