Results 151 to 160 of about 5,513 (216)

Sensitivity and Performance of Uncooled Avalanche Photodiode for Thermoluminescent Dosimetry Applications. [PDF]

Sensors (Basel)
Sobotka P, Bolek K, Pawłowska Z, Kliś B, Przychodzki M, Fornalski KW, Rutkowska KA.   +6 more
europepmc   +1 more source

Photoconductive Gain Behavior of Ni/β-Ga₂O₃ Schottky Barrier Diode-Based UV Detectors. [PDF]

Micromachines (Basel)
Kopyev VV, Yakovlev NN, Tsymbalov AV, Almaev DA, Kosmachev PV.   +4 more
europepmc   +1 more source

Local avalanche photodetectors driven by lightning-rod effect and surface plasmon excitations. [PDF]

Nat Commun
Fu Z, Liu J, Yuan M, Cai J, Hong R, Chen X, Lin D, Wu S, Zhang Y, Wu Z, Shen Z, Wang Z, Wang J, Zhang M, Yang Z, Fu D, Zhang F, Zhang R.   +17 more
europepmc   +1 more source

Reduction of Band-to-band Tunneling in Deep-submicron CMOS Single Photon Avalanche Photodiodes

, 2009
Henderson, Robert; id_orcid, Grant, L. A.   +1 more
core  

Avalanche speed in thin avalanche photodiodes

Journal of Applied Physics, 2003
The duration of the avalanche multiplication process in thin GaAs avalanche photodiodes is investigated using a full band Monte Carlo (FBMC) model. The results are compared with those of a simple random path length (RPL) model which makes the conventional assumptions of a displaced exponential for the ionization path length probability distribution ...
D S Ong, G J Rees, John P R David
exaly   +4 more sources

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GaN avalanche photodiodes

Applied Physics Letters, 2000
We report the electrical and optical characteristics of avalanche photodiodes fabricated in GaN grown by metalorganic chemical vapor deposition. The current–voltage characteristics indicate a multiplication of >25. Experiment indicates and simulation verifies that the magnitude of the electric field at the onset of avalanche gain is ⩾3 MV/cm ...
D J H Lambert, C J Eiting, A Beck
exaly   +2 more sources

Avalanche characteristics in thin GaN avalanche photodiodes

Japanese Journal of Applied Physics, 2019
Abstract A Monte Carlo model using random ionization path lengths describing the carriers quantum transport in thin gallium nitride (GaN) avalanche photodiodes (APDs) for ultraviolet detection in industry is developed.
Cheang, Pei Ling, Wong, Eng Kiong, Teo, Lay Lian   +2 more
openaire   +2 more sources