Results 171 to 180 of about 5,513 (216)

SiC avalanche photodiodes

2007 International Semiconductor Device Research Symposium, 2007
Ultraviolet detectors are becoming increasingly important in medical, military, and environmental applications, including biological agent detection and non-line-of-sight (NLOS) communications. SiC avalanche photodiodes (APDs) are an attractive candidate for those applications that place a premium on detectors that are compact, rugged, and inexpensive.
Joe C. Campbell, null Han-Din Liu, Dion McIntosh, null Xiaogang Bai   +3 more
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SCREENING OF AVALANCHE PHOTODIODES FOR THE CMS ECAL

Astroparticle, Particle and Space Physics, Detectors and Medical Physics Applications, 2004
The Compact Muon Solenoid is one of two general purpose detectors currently being constructed for the Large Hadron Collider at CERN foreseen to begin data taking in 2007. Avalanche Photo Diodes (APDs) have been chosen to detect the scintillation light of the 61 200 lead tungstate crystals in the barrel part of the electromagnetic calorimeter of CMS ...
ANTUNOVIC, Z., BRITVITCH, I., KUZNETSOV, A., MUSIENKO, Y., REUCROFT, S., SWAIN, J., DEITERS, K., INGRAM, Q., RENKER, D., SAKHELASHVILI, T., GODINOVIC, N., PULJAK, I., SORIC, I., RUSACK, R., SINGOVSKI, A.   +14 more
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Avalanche-Photodiode Frequency Response

Journal of Applied Physics, 1967
The short-circuit photocurrent from an avalanche photodiode is calculated using an exact solution of the differential transport equations for the multiplication region. The dc electric field and the hole and electron velocities are assumed constant in the avalanche region into which photoelectrons are injected.
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Avalanche buildup time of silicon avalanche photodiodes

Applied Physics Letters, 1975
The avalanche buildup time in silicon n+-p avalanche photodiodes is studied by a shot noise investigation. The avalanche buildup time t is given by t∼5×10−13M sec, where M is the multiplication factor.
T. Kaneda, H. Takanashi
openaire   +1 more source

Robust avalanche in GaN leading to record performance in avalanche photodiode

2020 IEEE International Reliability Physics Symposium (IRPS), 2020
This abstract presents a study on the avalanche capability of GaN p-i-n diode leading to the achievement of 60A/W, 278V GaN avalanche photodiode. The GaN p-i-n diode fabricated on a free-standing GaN substrate was avalanche capable due to optimal edge termination.
Dong Ji, Burcu Ercan, Garret Benson, A. K. M. Newaz, Srabanti Chowdhury   +4 more
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An optimized avalanche photodiode

IEEE Transactions on Electron Devices, 1967
The feasibility of a fast, high-gain photodetector based on the phenomenon of avalanche multiplication in semiconductors has been investigated. Based on the process of carrier multiplication in a high electric field, criteria for the design of an optimized avalanche photodiode and for the choice of the best semiconductor material are developed.
openaire   +1 more source

Avalanche characteristics of single heterojunction avalanche photodiodes

The European Physical Journal Applied Physics, 2009
A simple Monte Carlo (MC) model is proposed to study the avalanche characteristics of heterojunction avalanche photodiode (HAPD). This model is capable to simulate the avalanche multiplication and excess noise factor in HAPDs by including the dead-space effect, hole to electron ionization ratio and heterointerface probability.
L. C. Low, A. H. You, L. L. Y. Andy, S. L. Tan   +3 more
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Delta-Doped Sagm-Avalanche Photodiodes

[1991] 49th Annual Device Research Conference Digest, 1991
Summary form only given. The fabrication of a delta-doped SAGM-APD is reported. The multiplication region is only 0.3 mu m thick. A gain-bandwidth product of 75 GHz has been achieved. Using a top-surface reflector, quantum efficiencies of over 70% have been obtained even though the absorption layer is only 1.1 mu m thick. >
R. Kuchibhotla, J.C. Campbell, C. Tsai, W.T. Tsang   +3 more
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LSO/photodiode and LSO avalanche photodiode detectors

IEEE Conference on Nuclear Science Symposium and Medical Imaging, 2003
The performance of Lu/sub 2(1-x)/Ce/sub 2x/(SiO/sub 4/)O (LSO) detectors was assessed under laboratory conditions. The PMT (photomultiplier tube) and the APD (avalanche photodiode) gave the same energy resolution when used with LSO, although the APD displayed a thermal noise threshold of 30 keV compared to >
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III-nitride avalanche photodiodes

SPIE Proceedings, 2009
Wide bandgap III-Nitride semiconductors are a promising material system for the development of ultraviolet avalanche photodiodes (APDs) that could be a viable alternative to photomultiplier tubes. In this paper, we report the epitaxial growth and physical properties of device quality GaN layers on high quality AlN templates for the first ...
Ryan McClintock, Jose L. Pau, Can Bayram, Bruno Fain, Paul Giedraitis, Manijeh Razeghi, Melville P. Ulmer   +6 more
openaire   +1 more source