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2010
This chapter contains sections titled: History Structure Characteristics Applications Related Devices This chapter contains sections titled: References ]]>
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This chapter contains sections titled: History Structure Characteristics Applications Related Devices This chapter contains sections titled: References ]]>
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Single Photon Avalanche Photodiodes
Optical Fiber Communication Conference and National Fiber Optic Engineers Conference, 2009• Performance of Geiger-mode APDs is improving rapidly ↓ • New application opportunities • Infrared SPADs - Acceptable detection efficiencies - Need lower dark count rates → higher operating temperature - Need solution for afterpulsing - Initial systems demonstrations and field ...
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Avalanche Photodiode Simulations
2014Process simulations of the avalanche photodiode structure are performed using the proposed processing parameters. Processing parameters are varied to find the optimal values. Breakdown voltage of the different parts of the structure is simulated in the device simulator and the maximum breakdown voltage is determined.
Knežević, Tihomir, Suligoj, Tomislav
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AlInAsSb avalanche photodiodes on InP substrates
Applied Physics Letters, 2021Seunghyun Lee +2 more
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Excess Noise in Silicon Avalanche Photodiodes
2006The mean avalanche gain and the excess noise factor are important parameters characterizing the performance of an Avalanche Photodiode. These parameters vary with electric field strength and the position of the primary electron-hole pairs generated in the APD depletion layer. In the present paper, the mean avalanche gain and the excess noise properties
Kocak, FATMA, Tapan, I.
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Back-illuminated separate absorption and multiplication GaN avalanche photodiodes
Applied Physics Letters, 2008C Bayram, R Mcclintock, M Razeghi
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Epitaxially-grown Ge/Si avalanche photodiodes for 1.3 μm light detection
Optics Express, 2008G Sarid, Mike Morse, John E Bowers
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