Results 91 to 100 of about 127,795 (313)

Two‐Dimensional Materials as a Multiproperty Sensing Platform

Advanced Functional Materials, EarlyView.
Various sensing modalities enabled and/or enhanced by two‐dimensional (2D) materials are reviewed. The domains considered for sensing include: 1) optoelectronics, 2) quantum defects, 3) scanning probe microscopy, 4) nanomechanics, and 5) bio‐ and chemosensing.
Dipankar Jana, Shubhrasish Mukherjee, Dmitrii Litvinov, Magdalena Grzeszczyk, Sergey Grebenchuk, Makars Šiškins, Virgil Gavriliuc, Yihang Ouyang, Changyi Chen, Yuxuan Ye, Meng Yiming, Maciej Koperski   +11 more
wiley   +1 more source

Magnetic Scanning Tunneling Microscopy with a Two-Terminal Non-Magnetic Tip: Quantitative Results

, 2000
We report numerical simulation result of a recently proposed \{P. Bruno, Phys. Rev. Lett {\bf 79}, 4593, (1997)\} approach to perform magnetic scanning tunneling microscopy with a two terminal non-magnetic tip.
H.U. Baranger, J.C. Slonczewski, L. P. Kadanoff, L.V. Keldysh, M. Bode, M. Büttiker, M. Büttiker, M. Juliere, N.F. Mott, O. Pietzsch, P. Bruno, Patrick Bruno, R. Wiesendanger, R. Wiesendanger, S. Datta, S. Heinze, S. Maekawa, T. P. Pareek, W. Wulfhekel   +18 more
core   +1 more source

Unprecedented Spin‐Lifetime of Itinerant Electrons in Natural Graphite Crystals

Advanced Functional Materials, EarlyView.
Graphite exhibits extraordinary spintronic potential, with electron spin lifetimes reaching 1,000 ns at room temperature ‐ over 100 times longer than graphene‐based devices. Magnetic resonance spectroscopy reveals strong anisotropy: out‐of‐plane spins live 50 times longer than their in‐plane counterparts.
Bence G. Márkus, Dávid Beke, Lili Vajtai, András Jánossy, László Forró, Ferenc Simon   +5 more
wiley   +1 more source

Electroluminescence from pure resonant states in hBN-based vertical tunneling junctions

Light: Science & Applications
Defect centers in wide-band-gap crystals have garnered interest for their potential in applications among optoelectronic and sensor technologies. However, defects embedded in highly insulating crystals, like diamond, silicon carbide, or aluminum oxide ...
Magdalena Grzeszczyk, Kristina Vaklinova, Kenji Watanabe, Takashi Taniguchi, Konstantin S. Novoselov, Maciej Koperski   +5 more
doaj   +1 more source

Photo-Induced Unpinning of Fermi Level in WO3

Sensors, 2005
Atomic force and high resolution scanning tunneling analyses were carried out onnanostructured WO3 films. It turned out that the band gap measured by scanning tunnelingspectroscopy at surface is lower than the band gap reported in the literature.
Steve P. Wilks, Giorgio Sberveglieri, Giuliano Martinelli, Thierry G.G. Maffeis, Vincenzo Guidi, Alessio Giberti, Guido Faglia, Elisabetta Comini, Maria C. Carotta, Cesare Malagù   +9 more
doaj   +1 more source

Theoretical study on magnetic tunneling junctions with semiconductor barriers CuInSe$_2$ and CuGaSe$_2$ including a detailed analysis of band-resolved transmittances

, 2018
We study spin-dependent transport properties in magnetic tunneling junctions (MTJs) with semiconductor barriers, Fe/CuInSe$_2$/Fe(001) and Fe/CuGaSe$_2$/Fe(001).
Masuda, Keisuke, Miura, Yoshio
core   +1 more source

Process-Voltage-Temperature Variability Estimation of Tunneling Current for Band-to-Band-Tunneling-Based Neuron

IEEE Transactions on Electron Devices
Compact and energy-efficient Synapse and Neurons are essential to realize the full potential of neuromorphic computing. In addition, a low variability is indeed needed for neurons in Deep neural networks for higher accuracy. Further, process (P), voltage (V), and temperature (T) variation (PVT) are essential considerations for low-power circuits as ...
Shubham Patil, Anand Sharma, R. Gaurav, Abhishek Kadam, Ajay Kumar Singh, Sandip Lashkare, Nihar Ranjan Mohapatra, Udayan Ganguly   +7 more
openaire   +2 more sources

Strained-$\hbox{Si}_{1 - x}\hbox{Ge}_{x}/\hbox{Si}$ Band-to-Band Tunneling Transistors: Impact of Tunnel-Junction Germanium Composition and Doping Concentration on Switching Behavior

IEEE Transactions on Electron Devices, 2009
Strained pseudomorphic Si/Si1-xGex/Si gate-controlled band-to-band tunneling (BTBT) devices have been analyzed with varying Ge composition up to 57% and p+ tunnel-junction (source) doping concentration in the 1019-1020 cm-3 range.
O. Nayfeh, J. Hoyt, D. Antoniadis
semanticscholar   +1 more source

Magnetic and Structural Response Tuned by Coexisting Mn Concentration‐Dependent Phases in MnBi2Te4 Thin Film Grown on GaAs(001) by Molecular Beam Epitaxy

Advanced Functional Materials, EarlyView.
The study explores structural and magnetic properties of one of the most recent topological quantum materials (MnBi2Te4). The Mn‐poor structure leads to stacking faults (quintuple layer ‐ QL of Bi2Te3 formation instead of a septuple layer ‐ SL of MnBi2Te4), resulting in a coexistence between weak antiferromagnetism and ferromagnetism.
Wesley F. Inoch, Sergio L. A. Mello, Gilberto Rodrigues‐Junior, Sukarno O. Ferreira, Marcelo M. Sant'Anna, Benjamin R. Salles, Mateus T. Souza, Sérgio L. Morelhão, Maybi F. Sampaio, Bráulio S. Archanjo, Leonarde N. Rodrigues   +10 more
wiley   +1 more source