Results 101 to 110 of about 127,795 (313)

Geometric effect in a vertical stack-up metal-insulator-metal tunnel diode

AIP Advances, 2017
The geometric effect was investigated in a vertically designed metal-insulator-metal (MIM) tunnel diode for which a narrow tunneling distance can be controlled easily and reliably, with the goal of enhancing rectifying efficiency, based on the angle of a
Jeong Hee Shin, Jae Hoon Yang, Su Jin Heo, Jae Eun Jang   +3 more
doaj   +1 more source

On the possibility of tunable-gap bilayer graphene FET

, 2008
We explore the device potential of tunable-gap bilayer graphene FET exploiting the possibility of opening a bandgap in bilayer graphene by applying a vertical electric field via independent gate operation.
Fiori, G., Iannaccone, G.
core   +1 more source

In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device

Advanced Functional Materials, EarlyView.
In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang, Rohan Dhall, Matthew M. Schneider, Cun Li, Chengyu Song, Sundar Kunwar, Hongyi Dou, Natanii R. Yazzie, Henry Tran, Daniel Appuing, Jim Ciston, Nicholas G. Cucciniello, Pinku Roy, Michael T. Pettes, John Watt, Winson Kuo, Haiyan Wang, Ye Cao, Rodney J. McCabe, Aiping Chen   +19 more
wiley   +1 more source

Ternary CMOS Compact Model for Low Power On-Chip Memory Applications

IEEE Journal of the Electron Devices Society
In this work, we present a tunneling based ternary CMOS (T-CMOS) compact model for low power ternary-SRAM (T-SRAM) design using CMOS technology. By designing compact model parameters of band-to-band tunneling current $(I_{\mathrm { BTBT}})$ according ...
Young-Eun Choi, Woo-Seok Kim, Myoung Kim, Junyoung Park, Min Woo Ryu, Kyung Rok Kim   +5 more
doaj   +1 more source

A Novel Reconfigurable Sub-0.25-V Digital Logic Family Using the Electron-Hole Bilayer TFET

IEEE Journal of the Electron Devices Society, 2018
We propose and validate a novel design methodology for logic circuits that exploits the conduction mechanism and the presence of two independently biased gates (“n-gate” and “p-gate”) of the electron-hole bilayer tunnel field ...
Cem Alper, Jose Luis Padilla, Pierpaolo Palestri, Adrian M. Ionescu   +3 more
doaj   +1 more source

Differential Conductance and Quantum Interference in Kondo Systems

, 2010
We present a large-N theory for the differential conductance, dI/dV, in Kondo systems measured via scanning tunneling spectroscopy. We demonstrate that quantum interference between tunneling processes into the conduction band and into the magnetic f ...
Figgins, Jeremy, Morr, Dirk K.
core   +1 more source

Reducing Open‐Circuit Voltage Losses in Wide‐Bandgap FAPbBr3 Perovskite Solar Cells for Continuous Unassisted Light‐Driven Water Splitting

Advanced Functional Materials, EarlyView.
The combination of formamidinium thiocyanate and 1,3‐propane diammonium iodide for bulk and top‐surface passivation, and a ternary fullerene blend to improve energy band alignment, suppresses energy losses in wide‐bandgap FAPbBr3 perovskite solar cells.
Laura Bellini, Daniël Grosfeld, Bruno Branco, Guus J. W. Aalbers, Lana M. Kessels, Willemijn H. M. Remmerswaal, Nicolas Daub, Kunal Datta, Martijn M. Wienk, René A. J. Janssen   +9 more
wiley   +1 more source

Relationship between band-offset, gate leakage current, and interface states density at SiO2/4H-SiC (000-1) interface

AIP Advances, 2019
We investigated the relationship between the band-offset, the gate leakage current, and the interface states density on SiO2/4H-SiC (000-1) structures via hard x-ray photoelectron spectroscopy and electrical measurements.
Efi Dwi Indari, Yoshiyuki Yamashita, Ryu Hasunuma, Takahiro Nagata, Shigenori Ueda, Kikuo Yamabe   +5 more
doaj   +1 more source

The Dynamics of Interfacial Trap States in High‐Detectivity Near‐Infrared Photomultiplication Organic Photodetectors

Advanced Functional Materials, EarlyView.
Photomultiplication organic photodetectors (PM OPDs) are an attractive strategy for health‐monitoring. Here, PM‐OPDs are reported with a specific detectivity of 5.7 × 1012 Jones and external quantum efficiency values of 3500% under −10 V. The dynamics of carrier trapping in these devices are elucidated through trap selective spectroscopical techniques.
Marie Houot, Zhuoran Qiao, Beier Hu, Davide Nodari, Francesco Furlan, Filip Aniés, Yicheng Yang, Martin Heeney, Artem A. Bakulin, Nicola Gasparini   +9 more
wiley   +1 more source

Peroral endoscopic tunneling stricturotomy for diverticulum treatment: novel procedure for pediatric esophageal anastomotic diverticula

VideoGIE
Background and Aims: This case details an 8-year-old female patient with a type C tracheoesophageal fistula and esophageal atresia who developed a symptomatic diverticulum proximal to an anastomotic scar band.
Taylor J. Kratochvil, MD, MS, Denis Chang, MD, MS, Jessica L. Yasuda, MD, Benjamin Zendejas, MD, MSc, Peter D. Ngo, MD   +4 more
doaj   +1 more source