Results 111 to 120 of about 127,795 (313)
Molecular Cross‐Linking of MXenes: Tunable Interfaces and Chemiresistive Sensing
Advanced Functional Materials, EarlyView.In this study, Ti3C2Tx MXenes are initially functionalized using oleylamine ligands to form stable dispersions in an organic solvent. Subsequently ligand exchange with α,ω‐diaminoalkanes enables cross‐linking, along with precise tuning of interfaces. This structural control translates into tunable charge transport and responsive VOC sensing, showing ...
Yudhajit Bhattacharjee +12 more
wiley +1 more source
Quasi‐Resonant Tunneling Transport in Magnetic CrBr3
Advanced Physics ResearchTunneling techniques are pivotal for probing 2D magnetic materials. While the Fowler‐Nordheim model describes tunneling in bulk materials through bias‐induced triangular potentials, van der Waals layered systems require special consideration of ...
Gen Long +8 more
doaj +1 more source
Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics
Advanced Functional Materials, EarlyView.Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha +18 more
wiley +1 more source
Tunneling between Dilute GaAs Hole Layers
, 2007 We report interlayer tunneling measurements between very dilute two-dimensional GaAs hole layers. Surprisingly, the shape and temperature-dependence of the tunneling spectrum can be explained with a Fermi liquid-based tunneling model, but the peak ...
E. Tutuc +5 more
core +1 more source
Advanced Functional Materials, EarlyView.Topological van der Waals contacts represent a new class of electrodes for 2D semiconductors, enabling precise control of the Schottky barrier height (SBH) and contact resistance (RC) through interlayer distance and orbital hybridization engineering. In Se‐based transition metal dichalcogenides, these contacts achieve an ultralow SBH of 7 meV, RC of 0.
Soheil Ghods +15 more
wiley +1 more source
Mesoporous Carbon Thin Films with Large Mesopores as Model Material for Electrochemical Applications
Advanced Functional Materials, EarlyView.Mesoporous carbon thin films possessing 70 nm mesopores are prepared on titanium substrates by soft templating of resol resins with a self‐synthesized poly(ethylene oxide)‐block‐poly(hexyl acrylate) block copolymer. A strategy to avoid corrosion of the metal substrate is presented, and the films are extensively characterized in terms of morphology ...
Lysander Q. Wagner +9 more
wiley +1 more source
Micromachines, 2019 L-shaped tunnel field-effect transistor (TFET) provides higher on-current than a conventional TFET through band-to-band tunneling in the vertical direction of the channel.
Junsu Yu +7 more
doaj +1 more source
, 2008 A leading contender for the pairing symmetry in the Fe-pnictide high temperature superconductors is extended s-wave $s_\pm$, a nodeless state in which the pairing changes sign between Fermi surfaces.
A. M. Zagoskin +3 more
core +1 more source
Selection Strategies for Flexible Pressure Sensor Electrode Materials Toward Ultrafast Response
Advanced Functional Materials, EarlyView.This study reveals, for the first time, how the electrode–organic interface governs the temporal performance of flexible pressure sensors. By pairing high‐conductivity CVD PEDOT with commonly used metal electrodes, the authors demonstrate that interfacial energy alignment dictates microsecond‐scale response, providing a straightforward design strategy ...
Jinwook Baek +11 more
wiley +1 more source
Graphene nanoribbon field-effect transistors on wafer-scale epitaxial graphene on SiC substrates
APL Materials, 2015 We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ∼10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap of ∼0.14 eV.
Wan Sik Hwang +12 more
doaj +1 more source