Results 251 to 260 of about 127,795 (313)

Gate-induced band-to-band tunneling leakage current in LDD MOSFETs

International Technical Digest on Electron Devices Meeting, 1992
Theoretical and experimental studies are presented to model the gate-induced drain leakage(GIDL) current due to band-to-band tunneling, which is one of the major leakage components in off-state MOSFETs. The model shows a good agreement with the experimental data for more than 7 decades of current magnitudes.
null Hsing-jen Wann, null Ko, null Chenming Hu   +2 more
openaire   +2 more sources

Modeling of Band-to-Band Tunneling Mechanisms

Japanese Journal of Applied Physics, 1990
Measurements and simulations are presented, which allow a better understanding of leakage mechanisms in reverse biased gated diodes. The model for the device simulation describes two mechanisms. In the high field regime the leakage current is identified as direct band-to-band tunneling.
Wolfgang Wolfgang, Bergner Bergner, Roland Roland, Kircher Kircher   +3 more
openaire   +2 more sources

Band-to-band tunneling in 3D devices

2014 International Workshop on Computational Electronics (IWCE), 2014
This work focuses on studying band-to-band tunneling in 3D devices, while considering variations in material properties (mass, doping), applied bias, or geometry. A simulation study of cylindrical nanowires, tapered structures and doping concentration variation demonstrates the importance of 3D effects in band-to-band tunneling current computation.
Lidija Filipovic, Oskar Baumgartner, Zlatan Stanojevic, Hans Kosina   +3 more
openaire   +1 more source

Microelectronic current-sourcing device based on band-to-band tunneling current

Nanotechnology, 2022
Abstract A new stable current-sourcing transistor is developed using the band-to-band tunneling phenomenon. A heterojunction between thin film WS2 and heavily hole-doped bulk silicon converts a section of the WS2 contacting the silicon into a hole-doped WS2 inside the WS2 channel, and band-to-band tunneling occurs between the electron ...
Onejae Sul, Yeonghun Lee, Sangduk Kim, Minjin Kwon, Hyeonjeong Sun, Jiyoung Bang, Hyungbeen Ju, Eunsuk Choi, Seung-Beck Lee   +8 more
openaire   +2 more sources

Efficient quantum mechanical simulation of band-to-band tunneling

EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, 2015
In this work, we extend an already existing simulator for tunnel FETs to fully take into account nonparabolicity (NP) of the conduction band in all aspects, namely the wave-function (WF) and density of states (DOS) corrections for both charge and BTBT current calculation.
Alper, Cem, Palestri, Pierpaolo, Padilla, Jose L., GNUDI, ANTONIO, GRASSI, ROBERTO, GNANI, ELENA, Luisier, Mathieu, Ionescu, Adrian M.   +7 more
openaire   +3 more sources

Impact of Quantum Confinement on Band-to-Band Tunneling of Line-Tunneling Type L-Shaped Tunnel Field-Effect Transistor

IEEE Transactions on Electron Devices, 2019
An L-shaped tunnel field-effect transistor (LTFET) employs an overlapped gate/channel/source architecture to maximize band-to-band tunneling (BTBT) area. The overlapped channel is very thin and suffers from the geometrical quantum confinement effect (QCE)
Faraz Najam, Y. Yu
semanticscholar   +1 more source

Modeling direct band-to-band tunneling using QTBM

2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2013
This work focuses on modeling the tunneling mechanism in direct semiconductors. An effective barrier is extracted between the valence and conduction band, by defining the barrier as valence-like near the valence band and conduction bandlike near the conduction band. The transition occurs at a point obtained by momentum matching.
Lidija Filipovic, Oskar Baumgartner, Hans Kosina   +2 more
openaire   +1 more source

Band-to-band tunneling related effects in a thin MOS structure

Microelectronic Engineering, 2004
The effect of band-to-band tunneling (BBT) on the behaviour of MOS structures doped to 10^18-10^19 cm−3 with an 2-3 nm oxide is studied theoretically. The BBT is shown to supply the minority carriers toward the Si/SiO2 interface. This effect can support the inversion layer in the non-equilibrium and modify the I-V and C-V curves.
Vexler, Mikhail, Shulekin, Alexander, Grgec, Dalibor, Grekhov, Igor, Meinerzhagen, Bernd   +4 more
openaire   +3 more sources

Band-to-band tunneling in MOS-capacitors for rapid tunnel-FET characterization

72nd Device Research Conference, 2014
Band-to-band tunneling (BTBT) in bulk group IV and III-V semiconductors is well known [1-2], but BTBT to confined layers is more difficult to calibrate experimentally. The latter occurs in most tunnel-FETs (TFET) and in particular in the promising line-TFETs [3,4].
Q. Smets, A. S. Verhulst, D. H.-C. Lin, D. Verreck, C. Merckling, S. El Kazzi, K. Martens, J-P. Raskin, V.-Y. Thean, M. M. Heyns   +9 more
openaire   +1 more source

Band-to-band tunneling in vertically scaled SiGe:C HBTs

IEEE Electron Device Letters, 2006
A nonideal base current component with negative differential resistance is observed at low injection on Gummel characteristics of high-speed SiGe:C bipolar transistors. The temperature dependence of this effect and the influence of emitter-base engineering on its magnitude are described.
D. Lagarde, P. Chevalier, T. Schwartzmann, A. Chantre   +3 more
openaire   +1 more source