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Band-to-band Tunneling Related Effects in a Thin MOS Structure
Microelectronic engineering, 2003The effect of band-to-band tunneling (BBT) on the behaviour of MOS structures doped to 10^18-10^19 cm−3 with an 2-3 nm oxide is studied theoretically. The BBT is shown to supply the minority carriers toward the Si/SiO2 interface. This effect can support the inversion layer in the non-equilibrium and modify the I-V and C-V curves.
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Device Degradation Due to Band-to-Band Tunneling
Extended Abstracts of the 1988 International Conference on Solid State Devices and Materials, 1988Hideyuki Matsuoka +2 more
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Band bending induced resonant tunneling in ferroelectric tunnel junctions
Applied Physics Letters, 2022, Xingwen Zheng
exaly
Atomic-Monolayer MoS2Band-to-Band Tunneling Field-Effect Transistor
Small, 2016Ming-Yang Li, Lain-Jong Li, Kang Wang
exaly
Band-to-Band Tunneling Transistor for Application to Bio Sensor
Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials, 2011T. Tabei, K. Shibahara, S. Yokoyama
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Reducing band-to-band tunneling in semiconductor devices
2022CHU-KUNG BENJAMIN +9 more
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Band Mapping Across a pn-Junction in a Nanorod by Scanning Tunneling Microscopy
Nano Letters, 2014Amlan J Pal, Abhijit Bera, Sukumar Dey
exaly