Results 221 to 230 of about 13,608 (259)

Band-to-Band Tunneling Diode for Ultralow-Voltage Applications

IEEE Transactions on Electron Devices, 2017
This paper presents a band-to-band tunneling (BTBT) diode for use in ultralow-voltage (ULV) applications. The BTBT diode is shown to have nearly zero turn-on voltage, because it does not operate using diffusion current like a typical p-n junction diode. A simple analytical model was developed to better understand the BTBT diode and to help optimize the
Thomas A. Jokinen, Shamus McNamara
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Band-to-Band Tunneling in SiGe: Influence of Alloy Scattering

IEEE Electron Device Letters, 2017
An improved band-to-band tunneling (BTBT) model for SiGe random alloy is presented. The model takes into account the coherent transition through the direct band gap as well as the phonon and alloy scattering induced transitions to the indirect conduction band valleys.
Seonghoon Jin, Hong-Hyun Park, Mathieu Luisier, Woosung Choi, Jongchol Kim, Keun-Ho Lee   +5 more
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A new model of trap assisted band-to-band tunnelling

The Eighth International Conference on Advanced Semiconductor Devices and Microsystems, 2010
The paper describes a new approach to calculate currents in a PN diode based on the extension of the Shockley-Read-Hall recombination-generation model. Presented model is an alternative to Hurkx model of trap assisted tunnelling.
Miroslav Mikolasek, Juraj Racko, Ladislav Harmatha, Ondrej Gallo, Jan Reznak, Frank Schwierz, Ralf Granzner   +6 more
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First demonstration of band-to-band tunneling in black phosphorus

2017 75th Annual Device Research Conference (DRC), 2017
Black phosphorus (BP) has recently attracted wide interest for various applications and is particularly appealing for low power tunneling devices due to several unique properties such as a small bandgap and small carrier effective masses. Here, we report the first experimental demonstration of band-to-band tunneling (BTBT) in BP.
Peng Wu, Abhijith Prakash, Joerg Appenzeller   +2 more
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Band-to-band tunneling in III-V semiconductor heterostructures

Eurocon 2013, 2013
To investigate the expected improvement in oncurrent and sub-threshold slope in III-V heterostructure tunnel field-effect transistors, we assess the band-to-band tunneling probability using a one-dimensional model based on the envelope function approximation.
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A compact model for tunnel field-effect transistors incorporating nonlocal band-to-band tunneling

Journal of Applied Physics, 2013
To enable circuit design using tunnel field-effect transistors (TFETs), a physics-based model based on nonlocal band-to-band tunneling is developed. To maintain accuracy, the tunneling lengths are estimated assuming that both vertical and horizontal tunneling paths exist in the device.
K. Fukuda, T. Mori, W. Mizubayashi, Y. Morita, A. Tanabe, M. Masahara, T. Yasuda, S. Migita, H. Ota   +8 more
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Atomistic nature in band-to-band tunneling in two-dimensional silicon pn tunnel diodes

Applied Physics Letters, 2016
We study low-temperature transport properties of two-dimensional (2D) Si tunnel diodes, or Si Esaki diodes, with a lateral layout. In ordinary Si Esaki diodes, interband tunneling current is severely limited because of the law of momentum conservation, while nanoscale Esaki diodes may behave differently due to the dopants in the narrow depletion region,
Michiharu Tabe, Hoang Nhat Tan, Takeshi Mizuno, Manoharan Muruganathan, Le The Anh, Hiroshi Mizuta, Ratno Nuryadi, Daniel Moraru   +7 more
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Ballistic Band-to-Band Tunneling in the OFF State in InGaAs MOSFETs

IEEE Transactions on Electron Devices, 2014
We present quantum transport simulation results for InAs and In 0.7 Ga 0.3 As double-gate MOSFETs by using an atomistic full-band basis to evaluate the tunneling currents in the OFF state. While InAs has the advantage of lower mass and higher injection velocity, it also has lower bandgap.
Dipanjan Basu, Roza Kotlyar, Cory E. Weber, Mark A. Stettler   +3 more
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Band-to-band tunneling in silicon diodes and tunnel transistors

2010
This work studies the effect of mechanically applied uniaxial strain on reverse-bias band-to-band tunneling current in n+/p+ vertical silicon diodes fabricated on {100} and {110} substrate orientations. The Band Structure Lab and nextnano are used to analyze the change in band structure with uniaxial stress applied perpendicular to the tunneling ...
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Nanoscale InGaAs FinFETs: Band-to-Band Tunneling and Ballistic Transport

ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), 2021
Jesús A. del Alamo, Xiaowei Cai, Xin Zhao, Alon Vardi, Jesús Grajal   +4 more
openaire   +1 more source