Results 201 to 210 of about 13,608 (259)

Internal field tailoring enables low noise high speed colloidal quantum dot photodetectors beyond 1500 nm. [PDF]

Nat Commun
Park Y, Park S, Jeong H, Shin D, Jang E, Kim H, Jeong S.   +6 more
europepmc   +1 more source

Dynamically Reconfigurable XNOR/IMP Logic Based on Dual-Mechanism Operation in an Electrically Tunable Two-Dimensional Heterojunction. [PDF]

Nanomaterials (Basel)
He Y, Jiang J, Xiong F, Zhu Z.
europepmc   +1 more source

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Effect of Band-to-Band Tunneling on Junctionless Transistors

IEEE Transactions on Electron Devices, 2012
We evaluate the impact of band-to-band tunneling (BTBT) on the characteristics of n-channel junctionless transistors (JLTs). A JLT that has a heavily doped channel, which is fully depleted in the off state, results in a significant band overlap between the channel and drain regions.
Anil Kottantharayil, Swaroop Ganguly, Mohit Bajaj   +2 more
exaly   +3 more sources

Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs

IEEE Transactions on Electron Devices, 2012
Germanium is a widely used material for tunnel FETs because of its small band gap and compatibility with silicon. Typically, only the indirect band gap of Ge at 0.66 eV is considered. However, direct band-to-band tunneling (BTBT) in Ge should be included in tunnel FET modeling and simulations since the energy difference between the Ge conduction band ...
, Bart Soree, William Vandenberghe
exaly   +3 more sources

Band-to-band tunneling related effects in a thin MOS structure

Microelectronic Engineering, 2004
The effect of band-to-band tunneling (BBT) on the behaviour of MOS structures doped to 10^18-10^19 cm−3 with an 2-3 nm oxide is studied theoretically. The BBT is shown to supply the minority carriers toward the Si/SiO2 interface. This effect can support the inversion layer in the non-equilibrium and modify the I-V and C-V curves.
I V Grekhov, A F Shulekin, B Meinerzhagen   +2 more
exaly   +4 more sources

Modeling of Band-to-Band Tunneling Mechanisms

Japanese Journal of Applied Physics, 1990
Measurements and simulations are presented, which allow a better understanding of leakage mechanisms in reverse biased gated diodes. The model for the device simulation describes two mechanisms. In the high field regime the leakage current is identified as direct band-to-band tunneling.
Wolfgang Wolfgang, Bergner Bergner, Roland Roland, Kircher Kircher   +3 more
openaire   +2 more sources

Band-to-band tunneling in 3D devices

2014 International Workshop on Computational Electronics (IWCE), 2014
This work focuses on studying band-to-band tunneling in 3D devices, while considering variations in material properties (mass, doping), applied bias, or geometry. A simulation study of cylindrical nanowires, tapered structures and doping concentration variation demonstrates the importance of 3D effects in band-to-band tunneling current computation.
Lidija Filipovic, Oskar Baumgartner, Zlatan Stanojevic, Hans Kosina   +3 more
openaire   +1 more source

Efficient quantum mechanical simulation of band-to-band tunneling

EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, 2015
In this work, we extend an already existing simulator for tunnel FETs to fully take into account nonparabolicity (NP) of the conduction band in all aspects, namely the wave-function (WF) and density of states (DOS) corrections for both charge and BTBT current calculation.
Alper, Cem, Palestri, Pierpaolo, Padilla, Jose L., GNUDI, ANTONIO, GRASSI, ROBERTO, GNANI, ELENA, Luisier, Mathieu, Ionescu, Adrian M.   +7 more
openaire   +3 more sources

Band-to-band tunneling in MOS-capacitors for rapid tunnel-FET characterization

72nd Device Research Conference, 2014
Band-to-band tunneling (BTBT) in bulk group IV and III-V semiconductors is well known [1-2], but BTBT to confined layers is more difficult to calibrate experimentally. The latter occurs in most tunnel-FETs (TFET) and in particular in the promising line-TFETs [3,4].
Q. Smets, A. S. Verhulst, D. H.-C. Lin, D. Verreck, C. Merckling, S. El Kazzi, K. Martens, J-P. Raskin, V.-Y. Thean, M. M. Heyns   +9 more
openaire   +1 more source

Monte Carlo Simulation of Band-to-Band Tunneling in Silicon Devices

Japanese Journal of Applied Physics, 2007
A band-to-band tunneling model including trap-assisted tunneling has been implemented in our ensemble full band Monte Carlo simulator. Four kinds of band-to-band tunneling mechanisms are taken into account. All the parameters in the band-to-band tunneling model are verified by comparing the pn junction reverse current with the experimental data.
Z. L. Xia, G. Du, Y. C. Song, J. Wang, X. Y. Liu, J. F. Kang, R. Q. Han   +6 more
openaire   +1 more source