Results 211 to 220 of about 13,608 (259)
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First integration of MOSFET band-to-band-tunneling current in BSIM4
Microelectronics Journal, 2013Static leakage currents represent a major issue in nano-scale CMOS. In digital VLSI circuits, the most relevant contributions to the overall leakage current are subthreshold conduction, gate current and band-to-band-tunneling (BTBT) current, which flows from drain/source to bulk through the reverse biased diffusion junctions.
Fabrizio Ramundo +2 more
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Drain-structure design for reduced band-to-band and band-to-defect tunneling leakage
Digest of Technical Papers.1990 Symposium on VLSI Technology, 1990The author investigates and models gate-induced drain leakage (GIDL) effects over a wide variety of drain structures, including n +-As/ n --P combinations, n - implant doses ( N n-), and spacer lengths (Ls). An analytical model taking account of nm-order As doping modulation is proposed to explain the enhanced GIDL for n +-As FETs and the ...
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Microelectronic current-sourcing device based on band-to-band tunneling current
Nanotechnology, 2022Abstract A new stable current-sourcing transistor is developed using the band-to-band tunneling phenomenon. A heterojunction between thin film WS2 and heavily hole-doped bulk silicon converts a section of the WS2 contacting the silicon into a hole-doped WS2 inside the WS2 channel, and band-to-band tunneling occurs between the electron ...
Onejae Sul +8 more
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Assessment of confinement-induced band-to-band tunneling leakage in the FinEHBTFET
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 2016In conventional planar EHBTFETs, the interband tunneling phenomena responsible for the drive current takes place vertically in the section of the channel where top and bottom gates overlap. As a result, the horizontal extent of this overlapping between gates is the limiting factor for both the available band-to-band tunneling area and the occupied ...
Padilla, J. L. +3 more
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Accuracy of equivalent model in band-to-band tunneling simulation of semiconductor nanowires
Japanese Journal of Applied Physics, 2022Abstract The accuracy of the equivalent model (EM) in the band-to-band tunneling simulation of semiconductor nanowires is investigated by constructing EMs for various semiconductor nanowires and calculating the tunneling characteristics with the non-equilibrium Green’s function method.
Jo Okada, Nobuya Mori, Gennady Mil'nikov
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Band-to-Band Tunneling in Carbon Nanotube Field-Effect Transistors
Physical Review Letters, 2004A detailed study on the mechanism of band-to-band tunneling in carbon nanotube field-effect transistors (CNFETs) is presented. Through a dual-gated CNFET structure tunneling currents from the valence into the conduction band and vice versa can be enabled or disabled by changing the gate potential.
J, Appenzeller +3 more
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Analytical Model of Band-to-Band Tunneling in ATLAS-TFET
2020 IEEE Region 10 Symposium (TENSYMP), 2020The Atomically Thin and Layered Semiconducting-channel Tunnel Field Effect Transistor (ATLAS-TFET) is a recent development from the conventional TFET that shows a sharp transition from off to on and has an exceedingly low subthreshold swing (SS) with minimum recorded value of 3.9 millivolts per decade. In this paper, a semiclassical analytical model of
Ahasan Ahamed +2 more
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Band-to-Band Tunneling in Ge-Rich SiGe Devices
IEEE Electron Device Letters, 2014Germanium is one of the promising materials for future CMOS technologies, due to its high carrier mobility and low Schottky barrier height (for PMOS). However, the presence of a small direct gap (in addition to the main indirect gap at the L-point) can result in significant band-to-band tunneling (BTBT), even at low voltages.
Borna Obradovic +2 more
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Band-to-band tunneling in vertically scaled SiGe:C HBTs
IEEE Electron Device Letters, 2006A nonideal base current component with negative differential resistance is observed at low injection on Gummel characteristics of high-speed SiGe:C bipolar transistors. The temperature dependence of this effect and the influence of emitter-base engineering on its magnitude are described.
D. Lagarde +3 more
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Modeling direct band-to-band tunneling using QTBM
2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2013This work focuses on modeling the tunneling mechanism in direct semiconductors. An effective barrier is extracted between the valence and conduction band, by defining the barrier as valence-like near the valence band and conduction bandlike near the conduction band. The transition occurs at a point obtained by momentum matching.
Lidija Filipovic +2 more
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