Results 151 to 160 of about 573 (171)

Band-to-band tunnelling (BTBT) in HgCdTe-based nBn detectors for LWIR applications

2014 Conference on Optoelectronic and Microelectronic Materials & Devices, 2014
In this paper we present a theoretical study on the influence of band-to-band-tunnelling (BTBT) in HgCdTe-based nBn detectors for longwave infrared (LWIR) applications. Numerical modelling shows that BTBT strongly depends on the barrier parameters and degrades the detectivity of LWIR nBn detectors.
N. D. Akhavan, G. Jolley, G. Umana Membreno, J. Antoszewski, L. Faraone   +4 more
openaire   +3 more sources

Effect of Band-to-Band Tunneling on Junctionless Transistors

IEEE Transactions on Electron Devices, 2012
We evaluate the impact of band-to-band tunneling (BTBT) on the characteristics of n-channel junctionless transistors (JLTs). A JLT that has a heavily doped channel, which is fully depleted in the OFF state, results in a significant band overlap between ...
Mohit Bajaj, Kota V R M Murali, Swaroop Ganguly   +2 more
exaly   +2 more sources

Large Variation in Temperature Dependence of Band-to-Band Tunneling Current in Tunnel Devices

IEEE Electron Device Letters, 2019
: The observation of a significant temperature-dependent variation in the ${I}$ - ${V}$ characteristics of tunneling devices is often interpreted as a signature of a trap-assisted-tunneling dominated current. In this letter, we use a ballistic 2D quantum-
Jasper Bizindavyi, Anne S Verhulst, Devin Verreck   +2 more
exaly   +1 more source

First integration of MOSFET band-to-band-tunneling current in BSIM4

Microelectronics Journal, 2013
Static leakage currents represent a major issue in nano-scale CMOS. In digital VLSI circuits, the most relevant contributions to the overall leakage current are subthreshold conduction, gate current and band-to-band-tunneling (BTBT) current, which flows ...
Paolo Nenzi, Mauro Olivieri
exaly   +2 more sources

Atomistic Full-Band Design Study of InAs Band-to-Band Tunneling Field-Effect Transistors

IEEE Electron Device Letters, 2009
Band-to-band tunneling field-effect transistors (BTBT FETs) are expected to exhibit a subthreshold swing (SS) better than the 60-mV/dec limit of conventional metal-oxide-semiconductor FETs at room temperature.
Mathieu Luisier, Gerhard Klimeck
exaly   +2 more sources

Low defect ultra-thin fully strained-Ge MOSFET on relaxed Si with high mobility and low band-to-band-tunneling (BTBT)

Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 2005
For the first time, the tradeoffs between higher mobility (smaller bandgap) channel and lower band-to-band-tunneling (BTBT) leakage have been investigated through detailed experiments and simulations. The resulting optimal structure obtained was an ultra-thin, low defect, 2nm fully strained Ge epi channel on relaxed Si, with a 4nm Si cap layer.
T. Krishnamohan, Z. Krivokapic, K. Uchida, Y. Nishi, K.C. Saraswat   +4 more
openaire   +1 more source

Process-Voltage-Temperature Variability Estimation of Tunneling Current for Band-to-Band-Tunneling-Based Neuron

IEEE Transactions on Electron Devices
Compact and energy-efficient synapse and neurons are essential to realize the full potential of neuromorphic computing. In addition, a low variability is indeed needed for neurons in deep neural networks for higher accuracy. Further, process (P), voltage
Shubham Patil, Anand Sharma, Abhishek A Kadam   +2 more
exaly   +2 more sources

Energy Band Adjustment in a Reliable Novel Charge Plasma SiGe Source TFET to Intensify the BTBT Rate

IEEE Transactions on Electron Devices, 2021
Mohammad K Anvarifard, Ali A Orouji
exaly  

Room‐Temperature Negative Differential Resistance and High Tunneling Current Density in GeSn Esaki Diodes

Advanced Materials, 2022
Po-Yuan Chiu, Yu-Jui Wu, Yen Chuang
exaly