Results 251 to 260 of about 61,860 (310)
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Heterojunction band offset engineering
Surface Science Reports, 1996Abstract Control of band discontinuities in semiconductor heterostructures may introduce a new important degree of freedom in the design of heterojunction devices and allow independent optimization of carrier injection, carrier confinement and ionization thresholds in high speed and optoelectronic devices.
FRANCIOSI, ALFONSO, VAN DE WALLE C. G.
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Timing offset and frequency offsets in muti-band receiver system
2012 International Conference on ICT Convergence (ICTC), 2012In downlink orthogonal frequency division multiple access (OFDMA) systems, available subcarriers are divided into groups and assigned to multiple uses for simultaneous transmissions. The ideal universal receiver sampling the incoming signals just after a RF stage is very seducing but not realistic at this time due to limitations in sampling ...
Xin Wang, Heung-Gyoon Ryu
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Band offsets in heterostructures with thin interlayers
Physical Review B, 1988The valence-band offsets in lattice-matched semiconductor heterostructures are calculated from first principles by means of the self-consistent, relativistic linear-muffin-tin-orbital method applied in supercell geometries. The influence of the interface structure on the offset value is examined by performing calculations for systems with ultrathin ...
, Christensen, , Brey
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Band offsets in tetrahedral semiconductors
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1988Experimental and theoretical determinations of the valence band offsets at heterojunctions between tetragonal semiconductors are reviewed. The physical mechanisms underlying the offset are illustrated on the basis of midgap level theories, in particular the dielectric midgap energy version (DME).
Manuel Cardona, Niels E. Christensen
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Band offsets and strain in CdTe-GaAs heterostructures
Physical Review B, 1993CdTe(111)-GaAs(001) and CdTe(001)-GaAs(001) heterostructures were synthesized through molecular-beam epitaxy. In situ monochromatic x-ray photoemission spectroscopy and reflection high-energy electron diffraction, together with ex situ cross-sectional transmission electron microscopy, were exploited to probe the relation between overlayer orientation ...
G Bratina +8 more
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Modification of the band offset in boronitrene
Physical Review B, 2011Using density functional methods within the generalized gradient approximation implemented in the Quantum Espresso codes, we modify the band offset in a single layer of boronitrene by substituting a double line of carbon atoms. This effectively introduces a line of dipoles at the interface.
Obodo, K.O. (Kingsley Onyebuchi) +2 more
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Band offsets in heterostructures
2007The various experimental techniques of band-offset determinations in semiconductor heterojunctions are discussed. Special reference is made to their application to (Ga, Al)As/GaAs. We then review heuristic procedures for the band-offset prediction: i) band-edge alignment according to energy-level position of transition metal deep impurities and ii ...
Helmut Heinrich, Jerzy M. Langer
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Valence band offset at the CdS/CdTe interface
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2002Wurtzite CdS was grown by molecular beam epitaxy on CdTe(1̄1̄1̄)B and CdTe(111)A substrates. CdTe was grown on top of the CdS layers. X-ray photoelectron spectroscopy (XPS) indicates the existence of a thin reacted layer at the interface when CdTe(1̄1̄1̄)B is used as a substrate. No reaction is seen during growth of CdTe on CdS/CdTe(111)A.
Boieriu, P. +2 more
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Optimization of Sample Adaptive Band Offset in HEVC
2017 Data Compression Conference (DCC), 2017This paper presents two sets of modifications to band offset type of the Sample Adaptive Offset technique in HEVC. First, some constraints on the SAO semantics are added to solve sub-optimal syntax issue and to exploit the actual range information of reconstructed samples. Next, the classification process is adapted to the particular samples statistics.
Ya Chen +3 more
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Defect-assisted apparent lowering of band offsets
Physical Review B, 1994We present a study of the emission of electrons from a well into the conduction band of the associated barrier. The process involved is not the usual thermionic one but a defect-assisted tunneling process, occurring from the quantum states of the well to the energy levels of the conduction band of the associated barrier, and via the energy level ...
, Stievenard +4 more
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