Results 271 to 280 of about 61,860 (310)

Band offset of GaAs-GaInP heterojunctions

Semiconductor Science and Technology, 1993
N+ GaAs-n GaInP lattice-matched heterostructures, grown by metalorganic vapour phase epitaxy, have been studied by capacitance-voltage, current-voltage and current-temperature techniques. This allowed the determination of the conduction band offset in three different and independent ways.
S L Feng, J Krynicki, V Donchev, J C Bourgoin, M Di Forte-Poisson, C Brylinski, S Delage, H Blanck, S Alaya   +8 more
openaire   +1 more source

Variation in the Properties of Superlattices with Band Offsets

MRS Proceedings, 1986
ABSTRACTThe implications for recent reports of large valence band offsets the HgTe-CdTe heterojunction are examined. The variation of the band gap and effective mass for transport normal to the layers in the superlattice is examined in detail.
T. C. McGill, R. H. Miles, G. Y. Wu, T. J. Watson   +3 more
openaire   +1 more source

Band offsets engineering at semiconductor heterojunctions

SPIE Proceedings, 1993
In the present paper we discuss the electronic properties of semiconductor hetero junctions, focussing on the band offset problem. We address interface-specific phenomena, where the conditions of growth-including controlled contamination and strain effects-may significantly alter the properties of the junction.
Peressi M., Colombo L., Baldereschi A., Resta R., Baroni S.   +4 more
openaire   +3 more sources

Band offset diagnostics of advanced dielectrics

Journal of Materials Science: Materials in Electronics, 2008
We present a non-contact electrical metrology of advanced dielectrics on silicon with an emphasis on monitoring the composition of mixed dielectrics such as oxynitrides and hafnium silicates. The approach takes advantage of significant band offset differences between individual components of the mixed dielectrics.
Piotr Edelman, Marshall Wilson, John D’Amico, Alexandre Savtchouk, Jacek Lagowski   +4 more
openaire   +1 more source

Photoluminescence and band offsets of AlInAs/InP

Semiconductor Science and Technology, 1995
We report the temperature dependence of Al0.46In0.54As photoluminescence (PL) transition energies and Al0.46In0.54As/InP interface staggered line-up luminescence (SLL) energy. The S shape appearing from 4 to 90 K on the energy versus temperature curves of these PL energies is due to extrinsic recombinations. In particular, the S shape of the SLL energy
P Abraham, M A Garcia Perez, T Benyattou, G Guillot, M Sacilotti, X Letartre   +5 more
openaire   +1 more source

First-principles calculations of band offsets

Journal of Physics: Condensed Matter, 1998
The band offsets are calculated for both the Ga-As and interface bonds within first-principles local density functional theory. It is found that the band offsets are independent of the type of interfacial bond, while the valence band offset, VBO, decreases linearly with x as and the inferred conduction band offset CBO (the band-gap difference minus ...
X H Zhang, S J Chua, S J Xu, W J Fan
openaire   +1 more source

BAND OFFSET OF AIGalnAsSb ALLOY SEMICONDUCTOR

1991
A diagram to predict the band offset, i.e. the energy gaps and band discontinuities for pentanary AIGaInAsSb alloy lattice matched to GaSb substrate is presented in the interpolation scheme. In our model all energy band parameters are assumed to be represented by the same compositional function, so as to reproduce the reliable experimental or ...
Tadaaki Kaneko, Shun-ichi Gonda, Hajime Asahi   +2 more
openaire   +1 more source

A critical review of heterojunction band offsets

Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1985
Early work by Dingle and co-workers on the GaAs-(AlGa)As heterojunction established the fraction of the energy gap difference appearing in the conduction band to be 0.85. The experimental evidence and techniques which established this fraction and the subsequent evidence that has led to the questioning of its previous, almost universal, acceptance will
openaire   +1 more source

Calculation of band offset in chalcopyrite system

Solid State Communications, 2004
Abstract A recently reformulated tight binding method is used to calculate valence band offset (VBO) at the CuInSe 2 /CuGaSe 2 heterojunction. The hybrid energy is calculated in the s 2 p 2 configuration and a new model for the average hybrid energy is used. The theoretical VBO value of 0.05 eV is in good agreement with recent experimental value of
openaire   +1 more source

Band structure and band offsets in quantum wells

Journal of Crystal Growth, 1996
M. Livingstone, I. Galbraith
openaire   +1 more source