Results 261 to 270 of about 61,860 (310)

Band Offsets in YSZ/InGaZnO4 Heterostructure System

Journal of Nanoscience and Nanotechnology, 2014
The energy discontinuity in the valence band (deltaE(v)) of Y2O3-stabilized ZrO2 (YSZ)/InGaZnO4 (IGZO) heterostructures was obtained from X-ray photoelectron spectroscopy (XPS) measurements. The YSZ exhibited a bandgap of 4.4 eV from absorption measurements.
J K, Kim, K W, Kim, E A, Douglas, B P, Gila, V, Craciun, E S, Lambers, D P, Norton, F, Ren, S J, Pearton, Hyun, Cho   +9 more
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Band-offset transitivity in strained (001) heterointerfaces

Physical Review B, 1992
Energy-band lineups at several [100] heterojunctions of III-V semiconductors are calculated using a self-consistent tight-binding treatment. The calculations exhibit transitivity to within 0.2 eV for ${\mathrm{In}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Ga}}_{\mathit{x}}$As/${\mathrm{In}}_{1\mathrm{\ensuremath{-}}\mathit{y}}$${\mathrm{Al}}_ ...
, Foulon, , Priester
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Band Offsets in Semiconductor Heterojunctions

1992
Publisher Summary This chapter presents an overview of several theoretical approaches and experimental measurement techniques for determining band offset values and discuss the experimental and theoretical data reported for a number of specific heterojunction systems. It also evaluates the credibility and accuracy of the experimental measurements and
Edward T. Yu, James O. McCaldin, Thomas C. McGill   +2 more
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Theoretical study of band offsets at semiconductor interfaces

Physical Review B, 1987
We present a first-principles approach to deriving the relative energies of valence and conduction bands at semiconductor interfaces, along with a model which permits a simple interpretation of these band offsets. Self-consistent density-functional calculations, using ab initio nonlocal pseudo-potentials, allow us to derive the minimum-energy structure
, Van de Walle CG, , Martin
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Band offsets and band bending at heterovalent semiconductor interfaces

Physical Review B, 2010
We present a comprehensive study of band offsets and band bending at heterovalent semiconductor heterointerfaces. A perfectly abrupt heterovalent interface is usually thermodynamically unstable, and atomic intermixing of materials with different numbers of valence electrons causes large variations in band offsets and local doping density, depending on ...
A. Frey, U. Bass, S. Mahapatra, C. Schumacher, J. Geurts, K. Brunner   +5 more
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Heterojunction band offsets and scaling

Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1987
It is shown that accurate x-ray photoemission spectroscopy values of the valence band offsets ΔEv for Ge/GaAs(110), GaAs/ZnSe(110), and Ge/ZnSe(110) vary linearly with the minimum band-gap difference and obey the simple scaling relation, ΔEv/ΔEg(min)=3/4.
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Valence-band offsets and band tailoring in compound strained-layer superlattices

Physical Review B, 1994
A numerical method, in which the average bond energy is considered as a reference level for determining the valence-band offset (VBO) in strained-layer superlattices (SLS's), is suggested and tested by performing ab initio electronic-structure calculations for the SLS's (InP${)}_{\mathit{n}}$/(InAs${)}_{\mathit{n}}$(001), (n=1,3,5), (GaP${)}_{1}$/(GaAs$
Ke, S. H., Wang, R. Z., Huang, M. C.
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SiGeC: Band gaps, band offsets, optical properties, and potential applications

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1998
Studying the structural and photoluminescence properties of pseudomorphic Si1−yCy and Si1−x−yGexCy multiple quantum well (QW) structures on (001) Si substrates offer a quantitative characterization of the band gap and band offset shifts caused by C alloying for y<3%. The main features of Si1−yCy alloys, which are a reduced lattice constant and a
Brunner, K., Schmidt, O., Winter, W., Eberl, K., Gluck, M., König, U.   +5 more
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Dipole effects and band offsets at semiconductor interfaces

Physical Review B, 1988
The valence-band offsets in 15 lattice-matched semiconductor heterostructures are calculated from first principles by means of the self-consistent, relativistic linear-muffin-tin-orbital (LMTO) method applied in the supercell geometry. The outermost cation d-like states hybridize with the valence-band maximum, and they influence therefore the offset ...
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Valence-band offsets at strained Si/Ge interfaces

Physical Review B, 1991
We perform a thorough theoretical analysis of the band-offset problem at strained Si/Ge interfaces. The difference between the two materials is small enough to warrant a linear-response treatment: Owing to this feature, chemical and elastic effects can be studied independently. Our main finding is that the band offset is a bulk property, depending only
Colombo, L., Resta, R., Baroni, S.
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