Results 261 to 270 of about 2,433,276 (338)

Variation in the Properties of Superlattices with Band Offsets

MRS Proceedings, 1986
ABSTRACTThe implications for recent reports of large valence band offsets the HgTe-CdTe heterojunction are examined. The variation of the band gap and effective mass for transport normal to the layers in the superlattice is examined in detail.
T. C. McGill, R. H. Miles, G. Y. Wu, T. J. Watson   +3 more
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Band offsets and heterostructures of two-dimensional semiconductors

Applied Physics Letters, 2013
Jun Kang, Sefaattin Tongay, Jian Zhou
exaly   +2 more sources

The effect of band offsets in quantum dots [PDF]

Solar Energy Materials and Solar Cells, 2016
The insertion of quantum dots in a host material produces band offsets which are greatly dependent on the field of strains brought about by this insertion.
A Luque, A S Vlasov, A Marti
exaly   +2 more sources

Band offset in semiconductor heterojunctions

Journal of Physics: Condensed Matter, 2021
Abstract Semiconductor heterojunctions are widely applied in solid-state device applications, including semiconductor lasers, solar cells, and transistors. In photocatalysis they are of interest due to their capability to hinder charge carriers’ recombination.
Di Liberto G., Pacchioni G.
openaire   +2 more sources

Band offsets at metalorganic chemical vapor deposited β-(AlxGa1−x)2O3/β-Ga2O3 interfaces—Crystalline orientation dependence

Journal of Vacuum Science and Technology, 2021
The β-(AlxGa1−x)2O3 alloy represents an emerging ultrawide bandgap semiconductor material for applications in high-power electronics and deep ultraviolet optoelectronics. The recent demonstrations of orientation-dependent epitaxial growth of high quality
A. Bhuiyan, Zixuan Feng, Hsien-Lien Huang, Lingyu Meng, Jinwoo Hwang, Hongping Zhao   +5 more
semanticscholar   +1 more source

Theoretical analysis on effect of band offsets in perovskite solar cells

Solar Energy Materials and Solar Cells, 2015
T. Minemoto, M. Murata
exaly   +2 more sources

Band offsets, Schottky barrier heights, and their effects on electronic devices

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 2013
J Robertson, John Robertson A, Robertson John   +2 more
exaly   +2 more sources

Coupled ultrathin InAs layers in GaAs as a tool for the determination of band offsets

Superlattices and Microstructures, 1997
We have determined the band offsets at the highly strained InAs/GaAs heterointerface by photoluminescence excitation (PLE) measurements of the symmetric and antisymmetric states in two coupled ultrathin InAs layers embedded in a GaAs matrix.
J E M Haverkort, W Van Der Vleuten, J H Wolter   +2 more
exaly   +2 more sources

Composition dependence of the band offsets in wurtzite nitride-based heterojunctions

Materials Science in Semiconductor Processing, 2016
International audienceWe theoretically calculate the composition dependence of the valence- and conduction- band discontinuities at the interfaces between selected III-nitride ternary materials with wurtzite structure, e.g. AlxGa1-xN/AlxGa1-xN, InxGa1-xN/
J -L Lazzari
exaly   +2 more sources

Heterojunction band offset engineering

Surface Science Reports, 1996
Abstract Control of band discontinuities in semiconductor heterostructures may introduce a new important degree of freedom in the design of heterojunction devices and allow independent optimization of carrier injection, carrier confinement and ionization thresholds in high speed and optoelectronic devices.
FRANCIOSI, ALFONSO, VAN DE WALLE C. G.
openaire   +3 more sources