Results 271 to 280 of about 2,433,276 (338)

Timing offset and frequency offsets in muti-band receiver system

2012 International Conference on ICT Convergence (ICTC), 2012
In downlink orthogonal frequency division multiple access (OFDMA) systems, available subcarriers are divided into groups and assigned to multiple uses for simultaneous transmissions. The ideal universal receiver sampling the incoming signals just after a RF stage is very seducing but not realistic at this time due to limitations in sampling ...
Xin Wang, Heung-Gyoon Ryu
openaire   +1 more source

Band offsets in heterostructures with thin interlayers

Physical Review B, 1988
The valence-band offsets in lattice-matched semiconductor heterostructures are calculated from first principles by means of the self-consistent, relativistic linear-muffin-tin-orbital method applied in supercell geometries. The influence of the interface structure on the offset value is examined by performing calculations for systems with ultrathin ...
, Christensen, , Brey
openaire   +2 more sources

Band Gaps, Band‐Offsets, Disorder, Stability Region, and Point Defects in II‐IV‐N2 Semiconductors

Physica Status Solidi (a), 2019
Recent work on heterovalent ternary nitrides, II‐IV‐N2, is reviewed. The authors first provide an overview of the relevant literature, then briefly discuss band gaps, band offsets and the effects and nature of disorder.
S. Lyu, Dmitry Skachkov, K. Kash, Eric W. Blanton, W. Lambrecht   +4 more
semanticscholar   +1 more source

Copper Thiocyanate and Copper Selenocyanate Hole Transport Layers: Determination of Band Offsets with Silicon and Hybrid Perovskites from First Principles

Physica Status Solidi (a), 2019
Copper thiocyanate (CuSCN) and copper selenocyanate (CuSeCN) combine a high work function with a high optical transparency. To elucidate their potential as transparent hole selective materials, herein, first‐principles calculations of the structural and ...
M. Sajjad, Nirpendra Singh, Michele De Bastiani, S. De Wolf, U. Schwingenschlögl   +4 more
semanticscholar   +1 more source

Band offsets in tetrahedral semiconductors

Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1988
Experimental and theoretical determinations of the valence band offsets at heterojunctions between tetragonal semiconductors are reviewed. The physical mechanisms underlying the offset are illustrated on the basis of midgap level theories, in particular the dielectric midgap energy version (DME).
Manuel Cardona, Niels E. Christensen
openaire   +1 more source

Band offsets and strain in CdTe-GaAs heterostructures

Physical Review B, 1993
CdTe(111)-GaAs(001) and CdTe(001)-GaAs(001) heterostructures were synthesized through molecular-beam epitaxy. In situ monochromatic x-ray photoemission spectroscopy and reflection high-energy electron diffraction, together with ex situ cross-sectional transmission electron microscopy, were exploited to probe the relation between overlayer orientation ...
G Bratina, L Sorba, A Antonini, G Ceccone, R Nicolini, G Biasiol, A Franciosi, J E Angelo, W W Gerberich   +8 more
openaire   +3 more sources

Modification of the band offset in boronitrene

Physical Review B, 2011
Using density functional methods within the generalized gradient approximation implemented in the Quantum Espresso codes, we modify the band offset in a single layer of boronitrene by substituting a double line of carbon atoms. This effectively introduces a line of dipoles at the interface.
Obodo, K.O. (Kingsley Onyebuchi), Andrew, Richard Charles, Chetty, Nithaya   +2 more
openaire   +2 more sources

Band offsets in heterostructures

2007
The various experimental techniques of band-offset determinations in semiconductor heterojunctions are discussed. Special reference is made to their application to (Ga, Al)As/GaAs. We then review heuristic procedures for the band-offset prediction: i) band-edge alignment according to energy-level position of transition metal deep impurities and ii ...
Helmut Heinrich, Jerzy M. Langer
openaire   +1 more source

Valence band offset at the CdS/CdTe interface

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2002
Wurtzite CdS was grown by molecular beam epitaxy on CdTe(1̄1̄1̄)B and CdTe(111)A substrates. CdTe was grown on top of the CdS layers. X-ray photoelectron spectroscopy (XPS) indicates the existence of a thin reacted layer at the interface when CdTe(1̄1̄1̄)B is used as a substrate. No reaction is seen during growth of CdTe on CdS/CdTe(111)A.
Boieriu, P., Sporken, Robert, Sivananthan, S.   +2 more
openaire   +1 more source

Optimization of Sample Adaptive Band Offset in HEVC

2017 Data Compression Conference (DCC), 2017
This paper presents two sets of modifications to band offset type of the Sample Adaptive Offset technique in HEVC. First, some constraints on the SAO semantics are added to solve sub-optimal syntax issue and to exploit the actual range information of reconstructed samples. Next, the classification process is adapted to the particular samples statistics.
Ya Chen, Philippe Bordes, Tangi Poirier, Fabien Racapé   +3 more
openaire   +1 more source