Results 291 to 300 of about 2,433,276 (338)

Valence-band offsets at strained Si/Ge interfaces

Physical Review B, 1991
We perform a thorough theoretical analysis of the band-offset problem at strained Si/Ge interfaces. The difference between the two materials is small enough to warrant a linear-response treatment: Owing to this feature, chemical and elastic effects can be studied independently. Our main finding is that the band offset is a bulk property, depending only
Colombo, L., Resta, R., Baroni, S.
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Band offset of GaAs-GaInP heterojunctions

Semiconductor Science and Technology, 1993
N+ GaAs-n GaInP lattice-matched heterostructures, grown by metalorganic vapour phase epitaxy, have been studied by capacitance-voltage, current-voltage and current-temperature techniques. This allowed the determination of the conduction band offset in three different and independent ways.
S L Feng, J Krynicki, V Donchev, J C Bourgoin, M Di Forte-Poisson, C Brylinski, S Delage, H Blanck, S Alaya   +8 more
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Band offsets engineering at semiconductor heterojunctions

SPIE Proceedings, 1993
In the present paper we discuss the electronic properties of semiconductor hetero junctions, focussing on the band offset problem. We address interface-specific phenomena, where the conditions of growth-including controlled contamination and strain effects-may significantly alter the properties of the junction.
Peressi M., Colombo L., Baldereschi A., Resta R., Baroni S.   +4 more
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Band offset diagnostics of advanced dielectrics

Journal of Materials Science: Materials in Electronics, 2008
We present a non-contact electrical metrology of advanced dielectrics on silicon with an emphasis on monitoring the composition of mixed dielectrics such as oxynitrides and hafnium silicates. The approach takes advantage of significant band offset differences between individual components of the mixed dielectrics.
Piotr Edelman, Marshall Wilson, John D’Amico, Alexandre Savtchouk, Jacek Lagowski   +4 more
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Photoluminescence and band offsets of AlInAs/InP

Semiconductor Science and Technology, 1995
We report the temperature dependence of Al0.46In0.54As photoluminescence (PL) transition energies and Al0.46In0.54As/InP interface staggered line-up luminescence (SLL) energy. The S shape appearing from 4 to 90 K on the energy versus temperature curves of these PL energies is due to extrinsic recombinations. In particular, the S shape of the SLL energy
P Abraham, M A Garcia Perez, T Benyattou, G Guillot, M Sacilotti, X Letartre   +5 more
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First-principles calculations of band offsets

Journal of Physics: Condensed Matter, 1998
The band offsets are calculated for both the Ga-As and interface bonds within first-principles local density functional theory. It is found that the band offsets are independent of the type of interfacial bond, while the valence band offset, VBO, decreases linearly with x as and the inferred conduction band offset CBO (the band-gap difference minus ...
X H Zhang, S J Chua, S J Xu, W J Fan
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A review of models for heterojunction band offsets

Solid-State Electronics, 1987
Abstract A description and analysis is given of the theories governing the nature and magnitude of the conduction and valence band discontinuities in heterojunctions. These range from the original Anderson model of 1962[1] to the recently published position-dependent calculations of the present authors[2,3].
Hilmi Unlu, Allen Nussbaum
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BAND OFFSET OF AIGalnAsSb ALLOY SEMICONDUCTOR

1991
A diagram to predict the band offset, i.e. the energy gaps and band discontinuities for pentanary AIGaInAsSb alloy lattice matched to GaSb substrate is presented in the interpolation scheme. In our model all energy band parameters are assumed to be represented by the same compositional function, so as to reproduce the reliable experimental or ...
Tadaaki Kaneko, Shun-ichi Gonda, Hajime Asahi   +2 more
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A critical review of heterojunction band offsets

Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1985
Early work by Dingle and co-workers on the GaAs-(AlGa)As heterojunction established the fraction of the energy gap difference appearing in the conduction band to be 0.85. The experimental evidence and techniques which established this fraction and the subsequent evidence that has led to the questioning of its previous, almost universal, acceptance will
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Calculation of band offset in chalcopyrite system

Solid State Communications, 2004
Abstract A recently reformulated tight binding method is used to calculate valence band offset (VBO) at the CuInSe 2 /CuGaSe 2 heterojunction. The hybrid energy is calculated in the s 2 p 2 configuration and a new model for the average hybrid energy is used. The theoretical VBO value of 0.05 eV is in good agreement with recent experimental value of
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