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Wide Bandgap Nanowires: Synthesis, Properties, and Applications
, 2022 This book presents first-hand knowledge on wide bandgap nanowires for sensor and energy applications. Taking a multidisciplinary approach, it brings together the materials science, physics and engineering aspects of wide bandgap nanowires, an area in ...
Nguyen, Nam-Trung +3 more
core +1 more source
IEEE Journal of the Electron Devices SocietyIn this work, normally-off p-GaN monolithic bidirectional switch (MBDS) with common-drain configuration on 6-inch sapphire has been successfully fabricated using CMOS-compatible process in our pilot line.
Junbo Wang +9 more
doaj +1 more source
BANDGAP NARROWING IN NANO-WIRES [PDF]
International Journal of Modern Physics C, 2006 In this paper we consider two different geometry of quasi one-dimensional semiconductors and calculate their exchange-correlation induced bandgap renormalization (BGR) as a function of the electron-hole plasma density and quantum wire width. Based on different fabrication scheme, we define suitable external confinement potential and then leading-order
Nozari, Kourosh, Madadi, Mahyar
openaire +2 more sources
Symmetry‐Guided Multifunctional Acoustic System Based on Mechanically Actuated Sonic Crystals
Advanced Engineering Materials, EarlyView.This study presents the design, simulation, and experimental validation of amultifunctional acoustic metamaterial based on rotationally engineered sonic crystals.By tuning cylinder orientations, controllable band gaps and six distinct functionalities—including switching, topological insulation, beam splitting, and logic operations—areachieved ...
Yuanyan Zhao +2 more
wiley +1 more source
Optimization of Low-Voltage p-GaN Gate HEMTs for High-Efficiency Secondary Power Conversion
MicromachinesThe explosive demand for high-performance secondary power sources in artificial intelligence (AI) has brought significant opportunities for low-voltage GaN devices.
Lili Zhai +13 more
doaj +1 more source
Advanced Engineering Materials, EarlyView.Deep‐UV (258 nm) femtosecond pulses enable uniform amorphous silicon writing on Si(100)/(111) with a six‐fold larger fluence amorphization window than NIR methods. Optimized fluence and overlap yield 20–45 nm uniform and continuous amorphous layers. Microscopy shows sharp interfaces, and real‐time reflectivity reveals nanosecond melt–resolidification ...
Wissal Benali +5 more
wiley +1 more source
Van der Waals β-Ga2O3 thin films on polycrystalline diamond substrates
Nature CommunicationsThe self-heating effect in wide bandgap semiconductor devices makes epitaxial Ga2O3 on diamond substrates crucial for thermal management. However, the lack of wafer-scale single-crystal diamond and severe lattice mismatch limit its industrial application.
Jing Ning +9 more
doaj +1 more source
Results in Physics, 2017 In this manuscript, the effects of intrinsic defects on the electronic and optical properties of aluminum-doped β-Ga2O3 are investigated with first-principles calculations.
Xiaofan Ma +3 more
doaj +1 more source
Topological Impact of Delocalization on the Stability and Bandgap of Partially Oxidized Graphene [PDF]
, 2022 Strategic perturbations on graphene framework to inflict a tunable energy bandgap promises intelligent electronics that are smaller, faster, flexible, and much more efficient than silicon.
Pattath D., Pancharatna +2 more
core +2 more sources
Advanced Engineering Materials, EarlyView.Enhancing ultrasound transmission through an aberration layer exhibiting mismatched impedance with the surrounding medium possesses great implications in imaging and treatment. In this study, we show that a space‐coiling acoustic metamaterial with judiciously tailored structural profile can help improve impedance matching.
Maral Ghanami +4 more
wiley +1 more source