Results 51 to 60 of about 106,933 (307)
750 V Breakdown in GaN Buffer on 200 mm SOI Substrates Using Reverse-Stepped Superlattice Layers
In this work, we demonstrated the epitaxial growth of a gallium nitride (GaN) buffer structure on 200 mm SOI (silicon-on-insulator) substrates. This epitaxial layer is grown using a reversed stepped superlattice buffer (RSSL), which is composed of two ...
Shuzhen You +11 more
doaj +1 more source
Combinatorial vapor deposition enables independent tuning of Cs/Pb and Br/Cl in wide‐bandgap perovskites. Automated multimodal mapping of 500+ compositions reveals a high‐energy optical transition that correlates with enhanced photoluminescence, defining a practical Cs/Pb window.
Alexander Wieczorek +6 more
wiley +1 more source
Research on Linear Energy Transfer of SiC Materials Based on Monte Carlo Method
The energy deposition process for the main components of SIC Schottky diodes is simulated based on Geant4. Particle bombardment results were simulated under different angles, target materials and doping concentrations on the same target material for ...
Jiamu Xiao +5 more
doaj +1 more source
Bandgap engineering of Cd1−xSrxO [PDF]
Structural, electronic and optical properties of Cd1-xSrxO (0 \leq x \leq 1) are calculated for the first time using density functional theory. Our results show that these properties are strongly dependent on x. The bond between Cd and O is partially covalent and the covalent nature of the bond decreases as the concentration of Sr increases from 0 to ...
Khan, I. +4 more
openaire +2 more sources
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon +9 more
wiley +1 more source
Microchannel Cooling for Performance Enhancement of GaN-on-Si HEMT With a Low Rj-a of 13.5 K/W
Gallium nitride (GaN) is a high-performance wide bandgap semiconductor material with unique physical and chemical properties such as higher breakdown electric field, higher electron density, superior electron mobility and saturation velocity.
Jiajun Zhou +11 more
doaj +1 more source
An Image Detection–Memory–Recognition Artificial Visual Unit Based on Dual‐Gate Phototransistors
Optoelectronic synapses integrating sensing–memory–processing functions have great advantages in neuromorphic computing for visual information processing and complex learning, recognition, and memory in an energy‐efficient manner. Herein, a light‐induced
Bo Wang +12 more
doaj +1 more source
Engineered Nanotopography to Modulate Growth and Signaling of Neuronal Networks
This study examines the interaction between neurons and nanoscale topographies on engineered substrates. Neurons cultured on nanowires, nanopillars and nanoneedles exhibit enhanced neurite outgrowth, form more organized neuronal circuits, and display improved synaptic connectivity, compared to flat substrates.
Hao Nguyen Tran +8 more
wiley +1 more source
Development of hollow-core photonic bandgap fibres free of surface modes
Conventional optical fibres can only guide light in a high refractive index core by total internal reflection. By using total internal reflections it is not possible to guide light in an air core.
Amezcua-Correa, Rodrigo
core +1 more source
Preparation and Characterization of GaN-on-Si HEMTs with Nanocrystalline Diamond Passivation
Thermal accumulation under high output power densities is one of the most significant challenges for GaN power devices. Diamond, with its ultra-high thermal conductivity, offers great potential for improving heat dissipation in high-power GaN devices. In
Yu Fu +12 more
doaj +1 more source

