Results 41 to 50 of about 106,933 (307)

Designing Efficient Inverted Perovskite Solar Cells with Self-Assembled Monolayer Hole Transport Layers

open access: yesNano-Micro Letters
Highlights This review summarizes the development of self-assembled monolayers (SAMs), with a special focus on their applications in inverted (p-i-n) perovskite solar cells.
Xinyuan Feng   +9 more
doaj   +1 more source

Impact of Surface Treatments and Post-Deposition Annealing Upon Interfacial Property of ALD-Al₂O₃ on a-Plane GaN

open access: yesIEEE Journal of the Electron Devices Society, 2020
Optimization of interface characteristics between dielectric and non-polar GaN surface is very important and urgent for vertical GaN MOS device whose channel is perpendicular to the conventional cplane.
Yanni Zhang   +8 more
doaj   +1 more source

Advances in quantum dot intermediate band solar cells [PDF]

open access: yes, 2010
Several groups have reported on intermediate band solar cells (IBSC) fabricated with InAs/GaAs quantum dots (QD) which exhibit quantum efficiencies (QE) for sub-bandgap photon energies.
Antolín Fernández, Elisa   +23 more
core   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

Research on the epitaxial direction control and mechanism of polycrystalline diamond grains

open access: yesFunctional Diamond
The control of diamond film growth is crucial for the application of diamond films. In this article, different diamond film samples were prepared by adding nitrogen and oxygen in different proportions during the growth process.
Li Junpeng   +10 more
doaj   +1 more source

Improving the Manufacturability of Low-Temperature GaN Ohmic Contact by Blocking the Fluorine Ion Injection

open access: yesIEEE Journal of the Electron Devices Society
Stabilizing the CMOS-compatible low-temperature Au-free GaN Ohmic contact is a critical work that determines the performance and yield of GaN power HEMTs in mass production.
Tong Liu   +11 more
doaj   +1 more source

Novel P-type wide bandgap manganese oxide quantum dots for self-powered solar-blind deep UV devices

open access: yes, 2023
Obtaining p-type wide bandgap semiconductors operating in the deep UV (DUV) range (λ < 300 nm) is still challenging. However, as a part of this work, we developed novel p-type solution-processed wide bandgap semiconductors based on solution-processed ...
Mitra, Somak   +15 more
core   +1 more source

X‐Functionality–Driven Photocatalytic Hydrogen Evolution in 2D 4‐X‐PEA2SnI4 Perovskites

open access: yesAdvanced Functional Materials, EarlyView.
We report a water‐based synthesis of 2D 4‐X‐PEA2SnI4 perovskite microcrystals with prominent photocatalytic (PC) activity for H2 production. The synergy between organic functionalization and HI‐derived iodide scavenges holes suppress octahedral distortion, and favor electron accumulation, enabling a PC H2 evolution ∼20 µmol·g−1 and long‐term stability ...
Taeyeon Kim   +21 more
wiley   +1 more source

Photonic bandgap plasmonic waveguides [PDF]

open access: yesOptics Letters, 2011
A novel type of a plasmonic waveguide has been proposed featuring an "open" design that is easy to manufacture, simple to excite and that offers a convenient access to a plasmonic mode. Optical properties of photonic bandgap (PBG) plasmonic waveguides are investigated experimentally by leakage radiation microscopy and numerically using the finite ...
Markov, Andrey   +6 more
openaire   +3 more sources

Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition

open access: yesAdvanced Functional Materials, EarlyView.
An in situ PLD fabricated AlOx${\rm AlO}_x$/CuI/AlOx${\rm AlO}_x$ sandwich structure enables stable CuI TFTs with a field‐effect mobility of 2.3 ±$\pm$ 0.7 cm2${\rm cm}^{2}$ V−1${\rm V}^{-1}$ s−1${\rm s}^{-1}$ and excellent ambient stability. Complementary inverters based on CuI:Rb and ZnO:Al exhibit rail‐to‐rail voltage transfer characteristics and an
Yang Chen   +5 more
wiley   +1 more source

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