Results 1 to 10 of about 4,670,173 (290)
A high precision bandgap voltage reference [PDF]
In order to meet the market demand for wide temperature range and high precision bandgap voltage reference, this paper designs a bandgap reference with wide temperature range and low temperature coefficient.
Tian XingGuo, Xin XiaoNing, Han DongYang
doaj +3 more sources
A curvature-corrected low-voltage bandgap reference
A curvature-corrected bandgap reference that can function at supply voltages as low as 1 V, at a supply current of only 100 mu A, is presented. After trimming, this bandgap reference has a temperature coefficient (TC) of +or-4 p.p.m./ degrees C. The reference voltage is about 200 mV and it can easily be adjusted to higher values.
J H Huijsing, G C M Meijer
exaly +4 more sources
Wide-Supply-Voltage-Range CMOS Bandgap Reference for In Vivo Wireless Power Telemetry
The robustness of the reference circuit in a wide range of supply voltages is crucial in implanted devices. Conventional reference circuits have demonstrated a weak performance over wide supply ranges.
Ruhaifi Bin Abdullah Zawawi +4 more
doaj +3 more sources
Design of a Bandgap Reference with a High PSRR and Strong Load-Driving Capability [PDF]
This paper introduces an enhanced bandgap reference (BGR) design, addressing the shortcomings of traditional circuits, such as significant temperature drift, limited power-supply rejection, and inadequate load-driving capacity.
Meng Li +6 more
doaj +2 more sources
Design of a Bandgap Reference Circuit for MEMS Integrated Accelerometers [PDF]
To meet the requirements of integrated accelerometers for a high-precision reference voltage under wide supply voltage range, high current drive capability, and low power consumption, this paper presents a bandgap reference operational amplifier (op-amp)
Wenbo Zhang +5 more
doaj +2 more sources
A 3.0-V, High-Precision, High-PSRR BGR with High-Order Compensation and Improved FVF Pre-Regulation [PDF]
A 3.0 V bandgap reference (BGR) for battery management integrated circuit (BMIC) is presented, achieving a low temperature coefficient (TC) and a high power supply rejection ratio (PSRR).
Yongkang Shen +7 more
doaj +2 more sources
A Curvature Compensation Technique for Low-Voltage Bandgap Reference
Based on the standard 40 nm Complementary Metal Oxide Semiconductor (CMOS) process, a curvature compensation technique is proposed. Two low-voltage, low-power, high-precision bandgap voltage reference circuits are designed at a 1.2 V power supply.
Jie Shen +3 more
doaj +1 more source
A nW-level BJT-based bandgap reference with fine grained voltage and temperature coefficient trimming is presented. The bandgap reference utilizes switched capacitors (SC) as impedance elements instead of resistors in a current mode configuration.
Ori Bass, Asaf Feldman, Joseph Shor
doaj +1 more source
A high or low temperature compensation bandgap reference voltage with pre-regulated voltage circuit
分析了带隙基准电压分段补偿技术与基本原理, 提出一种具有预稳压功能的高低温补偿带隙基准电路。应用高低温补偿电路优化了温度系数, 设置预稳压电路提高了带隙基准电路的电源抑制比。基于0.35 μm标准CMOS工艺设计并绘制了电路及版图。仿真结果表明, 在-55~125℃范围内, 温漂系数仅为1.8×10-6/℃; 电源抑制比为-84.6 dB(在1 kHz下); 在2.6~5 V的电源幅度范围下, 电源抑制性能为19.6 μV/V。该电路可应用于高精度系统设计中。
LIU Xiaoxuan +3 more
doaj +1 more source
A Design of 10-Bit Asynchronous SAR ADC with an On-Chip Bandgap Reference Voltage Generator
A proposed prototype of a 10-bit 1 MS/s single-ended asynchronous Successive Approximation Register (SAR) Analog-to-Digital Converter (ADC) with an on-chip bandgap reference voltage generator is fabricated with 130 nm technology.
Deeksha Verma +7 more
doaj +1 more source

