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A 400nW CMOS bandgap voltage reference
2013 International Conference on Electrical, Electronics and System Engineering (ICEESE), 2013 Abstract — A resistorless 400 nano-Watts bandgap voltage reference in standard 0.25µ digital CMOS process is presented. Parasitic vertical bipolar transistors (BJT) are used to generate a series of cascaded thermal voltages (VT), which is summed with a base-emitter voltage (VBE) to produce a ~1.25V bandgap voltage (VBG).
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A Low-Power CMOS Bandgap Voltage Reference for Supply Voltages Down to 0.5 V
Electronics (Switzerland), 2021Alessandro Catania +2 more
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A Sub-200nW All-in-One Bandgap Voltage and Current Reference Without Amplifiers
IEEE Transactions on Circuits and Systems II: Express Briefs, 2021Zhangming Zhu, Lianxi Liu
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A Sub-1-V 8.5-ppm/°C Sampled Bandgap Voltage Reference
IEEE Transactions on Circuits and Systems II: Express Briefs, 2022Rakesh Kumar Palani
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A 1.2-V 0.959-ppm/°C multi-section curvature-compensated bandgap voltage reference with trimming
Microelectronics Journal, 2023Zhicong Luo, Rongshan Wei, Jinghu Li
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A nano-power sub-bandgap voltage and current reference topology with no amplifier
AEU - International Journal of Electronics and Communications, 2022Hamed Aminzadeh +1 more
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An Automotive Low-Power EMC Robust Brokaw Bandgap Voltage Reference
IEEE Transactions on Electromagnetic Compatibility, 2020Jan Plojhar +2 more
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A 1.8 V 0.918 ppm/°C CMOS bandgap voltage reference with curvature-compensated
IEICE Electronics Express, 2019Bo Zhang, Qing Hua
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A 2-V 23-μA 5.3-ppm/°C curvature-compensated CMOS bandgap voltage reference
IEEE Journal of Solid-State Circuits, 2003Liu Xun, P K T Mok
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