Barrier Height Prediction by Machine Learning Correction of Semiempirical Calculations. [PDF]
J Phys Chem A, 2023 García-Andrade X +3 more
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How Do Self-Interaction Errors Associated with Stretched Bonds Affect Barrier Height Predictions? [PDF]
J Phys Chem A, 2023 Shukla PB +5 more
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An extended grain boundary barrier height model including the impact of internal electric field
AIP Advances, 2018 An extended phenomenological model is proposed to rationalize the potential barriers of the varistor like boundaries of piezoelectric semiconductors.
Bai-Xiang Xu +3 more
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Schottky barrier height engineering on MoS2 field-effect transistors using a polymer surface modifier on a contact electrode. [PDF]
Discov Nano, 2023 Choi D, Jeon J, Park TE, Ju BK, Lee KY.
europepmc +1 more source
EnergiesHydraulic fracturing stands as a pivotal technological approach for enhanced tight gas recovery. This paper investigates the influences of geological and engineering parameters on the vertical extension mechanism of hydraulic fractures.
Jianshu Wu +9 more
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Correction: Controlling barrier height and spectral responsivity of p-i-n based GeSn photodetectors via arsenic incorporation. [PDF]
RSC Adv, 2023 Nawwar MA +7 more
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Effect of barrier height on friction behavior of the semiconductors silicon and gallium arsenide in contact with pure metals [PDF]
Friction experiments were conducted for the semiconductors silicon and gallium arsenide in contact with pure metals. Polycrystalline titanium, tantalum, nickel, palladium, and platinum were made to contact a single crystal silicon (111) surface.
Buckley, D. H., Mishina, H.
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Controlling barrier height and spectral responsivity of p-i-n based GeSn photodetectors via arsenic incorporation. [PDF]
RSC Adv, 2023 Nawwar MA +7 more
europepmc +1 more source
Observations and Parameterization of the Effects of Barrier Height and Source-to-Barrier Distance on Concentrations Downwind of a Roadway. [PDF]
Atmos Pollut Res, 2022 Francisco DM +4 more
europepmc +1 more source
Barrier inhomogeneities of Al/p-In2Te3 thin film Schottky diodes [PDF]
, 2011 The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of p-In2Te3/Al thin films Schottky diodes papered by Flash Evaporation technique were measured in the temperature range 303-335 K have been interpreted on the basis of the assumption
Desai, M.S. +6 more
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