Results 81 to 90 of about 1,599,648 (248)

Modulation of barrier height in n-type GaN Schottky structure with ultrathin oxide interlayer mediated by dipole formation [PDF]

APL Electronic Devices
The effect on the barrier height of inserting ultrathin oxide (GaOx) interlayers at n-type GaN Schottky contacts was systematically investigated. Inserting interlayers (>0.5nm) between GaN and electrode metals having relatively low electronegativities ...
Masahiro Hara, Ryo Sakai, Mikito Nozaki, Takuma Kobayashi, Heiji Watanabe   +4 more
doaj   +1 more source

Composites of Shellac and Silver Nanowires as Flexible, Biobased, and Corrosion‐Resistant Transparent Conductive Electrodes

Advanced Functional Materials, EarlyView.
Shellac, a centuries‐old natural resin, is reimagined as a green material for flexible electronics. When combined with silver nanowires, shellac films deliver transparency, conductivity, and stability against humidity. These results position shellac as a sustainable alternative to synthetic polymers for transparent conductors in next‐generation ...
Rahaf Nafez Hussein, Tiago Carneiro Gomes, Eliza Ng, Simon Rondeau‐Gagné, Tricia Breen Carmichael   +4 more
wiley   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

Chapter 13: Vulnerability of chondrichthyan fishes of the Great Barrier Reef to climate change [PDF]

, 2007
This chapter addresses the potential impact of climate change on the chondrichthyan fauna of the Great Barrier Reef, that is, the sharks, rays, skates and holocephalans that occur within the Great Barrier Reef region.
Kyne, P.M., Chin, A.
core   +1 more source

Temperature dependence of barrier height in a Ni/β-Ga2O3 Schottky barrier diode precisely determined by the analysis based on the thermionic emission-diffusion model

Applied Physics Express
Temperature dependence of the barrier height in a Ni/ β -Ga _2 O _3 Schottky barrier diode has been investigated in 303–573 K. The barrier height obtained by the capacitance–voltage ( C – V ) measurements slightly decreased with increasing temperature ...
Akihira Munakata, Kohei Sasaki, Kentaro Ema, Takuya Maeda   +3 more
doaj   +1 more source

Sonoma State History Journal: Opposing Forces Vol. 27

, 2023
The Sonoma State History Journal is the history department's student academic journal, produced by Sonoma State students since 1995. The journal provides a one-of-a-kind professional development opportunity for graduate and undergraduate students in the ...
Jared Height
core  

Embedded Ferroelectric Nanoclusters Can Drive Polarization Reversal in a Non‐Ferroelectric Polar Film via the Proximity Effect

Advanced Functional Materials, EarlyView.
Ferroelectric nanoclusters create local internal fields in a normally non‐switchable polar film because of polarization mismatch at their interfaces. That field opposes polarization in the regions with larger polarization and reinforces polarization in the regions with smaller polarization.
Anna N. Morozovska, Eugene A. Eliseev, Sergei V. Kalinin, Long‐Qing Chen, Dean R. Evans, Venkatraman Gopalan   +5 more
wiley   +1 more source

Barrier height inhomogeneity in electrical transport characteristics of InGaN/GaN heterostructure interfaces

AIP Advances, 2015
We have grown InGaN/GaN heterostructures using plasma-assisted molecular beam epitaxy and studied the temperature dependent electrical transport characteristics. The barrier height (φb) and the ideally factor (η) estimated using thermionic emission model
Basanta Roul, Shruti Mukundan, Greeshma Chandan, Lokesh Mohan, S. B. Krupanidhi   +4 more
doaj   +1 more source

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

Advanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon, Junil Kim, Geuntae Park, Minseok Kim, Woohyun Hwang, Wanki Kim, Daewon Ha, Byeongmoon Lee, Jae Eun Jang, Hyuk‐Jun Kwon   +9 more
wiley   +1 more source