Results 81 to 90 of about 145,393 (311)
The Investigation of Hybrid PEDOT:PSS/β-Ga2O3 Deep Ultraviolet Schottky Barrier Photodetectors
Nanoscale Research Letters, 2020 In this paper, the hybrid β-Ga2O3 Schottky diodes were fabricated with PEDOT:PSS as the anode. The electrical characteristics were investigated when the temperature changes from 298 K to 423 K.
Tao Zhang +16 more
doaj +1 more source
The Schottky barrier height at the CoSi2/Si(111) interface
, 1988 The Schottky barrier height for the CoSi2/Si(111) interface is calculated using a tight-binding theory. It is found that the barrier height is 0.55 eV for the model with fivefold-coordinated Co atoms at the interface and 0.13 eV for the model with ...
Matthai, Clarence Cherian, Rees, N. V.
core +1 more source
Advanced Functional Materials, EarlyView.Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source
Prediction of lateral barrier height in identically prepared Ni/n-type GaAs Schottky barrier diodes
, 2007 We have identically prepared Ni/n-GaAs/In Schottky barrier diodes (SBDs) with doping density of 7.3 x 10(15) cm(-3). The barrier height for the Ni/n-GaAs/In SBDs from the current-voltage characteristics have varied from 0.835 to 0.856 eV, and ideality ...
Yildirim, N. +3 more
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Advanced Functional Materials, EarlyView.This paper presents a digital microfluidics‐based technique for transferring and reconfiguring soft nanomembranes. Laser‐machined nanothin membranes are picked up, transported, and aligned via tailored surface tension and the actuation of water droplets, enabling the development of flexible electronics, the integration of functional materials on 3D ...
Quang Anh Nguyen +15 more
wiley +1 more source
Entry of firms into a market is an important economic mechanism that influences industry dynamics and contributes to allocative and dynamic efficiency.
Ron Kemp +3 more
core
Impact of doping on the performance of p-type Be-doped Al0.29 Ga0.71As Schottky diodes [PDF]
The effects of changing the acceptors concentration on the electrical characteristics of Au/Ti on Be-doped Al0.29Ga0.71As Schottky contact have been investigated in the temperature range of 100–400 K.
Henini, M.
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Barrier height change in very thin SiO2 films caused by charge injection [PDF]
, 2002 In this paper, we report an investigation of barrier height change in gate oxide caused by charge injection. By analyzing the small change in the post-stress Fowler-Nordheim (FN) tunneling current through the oxide layer, the change of the oxide barrier ...
Liu, Y, Sun, CQ, Chen, TP, Fung, S
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Advanced Functional Materials, EarlyView.Field‐free spin‐orbit torque domain‐wall synapses integrated with stochastic MTJ neurons enable compact hardware Boltzmann machines. Leveraging intrinsic stochasticity and multi‐level conductance, the system achieves efficient probabilistic learning with high accuracy, demonstrating a scalable spintronic platform for energy‐efficient edge AI.
Aijaz H. Lone +8 more
wiley +1 more source
Modeling of MoS2/Si heterostructure to study charge transfer dynamics
Nano ExpressHere, we synthesized a MoS _2 /Si heterojunction device using a scalable approach involving DC sputtering coupled with sulfurization. The observed current–voltage characteristics unequivocally indicate a rectifying behavior at MoS _2 /Si heterointerface.
Vartika Tiwari +2 more
doaj +1 more source