Results 61 to 70 of about 145,393 (311)

Performance Analysis of Abradable Coating Systems for Aircraft Gas Turbines

open access: yesAdvanced Engineering Materials, EarlyView.
Three CoNiCrAlY/YSZ/MgAl2O4 abradable liner configurations on a nickel‐superalloy are evaluated by thermal‐gradient cycling and incursion tests. Laser ablation of the bondcoat and/or Y2O3‐stabilized ZrO2 (YSZ) intermediate layer increases mechanical interlocking and bonding for thick topcoats.
Hanna Heyl   +4 more
wiley   +1 more source

Defect Analysis of Barrier Height Inhomogeneity in Titanium 4H-SiC Schottky Barrier Diodes

open access: yes, 2009
Over 350 4H-SiC Schottky barrier diodes (SBDs) of varying size are characterized using current-voltage (I-V) measurements, with some also measured as a function of temperature.
Bolen, M L, Capano, Michael A
core   +1 more source

Affecting the Properties of Copper–Graphene Electroconductive Composite by Severe Plastic Deformation

open access: yesAdvanced Engineering Materials, EarlyView.
Copper‐based composites enhanced with carbon feature convenient mechanical properties and favorable electric conductivity. Processing via deformation and thermomechanical treatments can introduce advantageous microstructures further enhancing their performance. Herein, copper–graphene powder‐based composites are directly consolidated via rotary swaging
Radim Kocich   +3 more
wiley   +1 more source

n+/p+ GaN and n+/p+ Al0.10Ga0.90N tunnel junctions: a promising alternative for hole injection in deep ultraviolet light-emitting diodes

open access: yesJournal of Information Display
This research replaced the traditional hole source layers in a conventional LED with a tunnel junction. In conventional light-emitting diodes (LEDs) two hole injecting layers (p-GaN and p-AlxGa1-xN) have been used, in which holes have to surpass greater ...
Jamshad Bashir   +3 more
doaj   +1 more source

Effect of titanium-dioxide nanoparticle on Richardson constant and barrier height of tartrazine dye based Schottky device

open access: yesDiscover Materials, 2023
Recently Fruit Dyes have achieved a significant interest as organic devices because of they are widely available, customizable and biodegradable. But low conductivity is one of the major limitations.
Arnab Kanti Karan   +4 more
doaj   +1 more source

Optimum Barrier Height for SiC Schottky Barrier Diode

open access: yesISRN Electronics, 2013
The study of barrier height control and optimization for Schottky barrier diode (SBD) from its physical parameters have been introduced using particle swarm optimization (PSO) algorithm. SBD is the rectifying barrier for electrical conduction across the metal semiconductor (MS) junction and, therefore, is of vital importance to the successful operation
Alaa El-Din Sayed Hafez   +1 more
openaire   +1 more source

PASTA‐ELN: Simplifying Research Data Management for Experimental Materials Science

open access: yesAdvanced Engineering Materials, EarlyView.
Research data management faces ongoing hurdles as many ELNs remain complex and restrictive. PASTA‐ELN offers an open‐source, cross‐platform solution that prioritizes simplicity, offline access, and user control. Its in tuitive folder structure, modular Python add‐ons, and open formats enable seamless documentation, FAIR data practices, and easy ...
S. Brinckmann, G. Winkens, R. Schwaiger
wiley   +1 more source

Gaussian distribution of inhomogeneous barrier height in Ag/p-Si (100) Schottky barrier diodes

open access: yes, 2004
The current-voltage (I-V) measurements on Ag/p-Si Schottky barrier diodes in the temperature range 125-300 K were carried out. The I-V analysis based on the thermionic emission (TE) theory has revealed an abnormal decrease of apparent barrier height and ...
Selcuk, AB   +4 more
core   +1 more source

Recycling of NiTi Shape Memory Alloys: Fundamental and Technological Aspects of a Vacuum Induction Melting Processing Route

open access: yesAdvanced Engineering Materials, EarlyView.
The present study investigates recycling of NiTi shape memory alloys via vacuum induction melting. An ingot was synthesized from elemental Ni and Ti and subjected to three subsequent remelting cycles. Remelting increases process durations and impurity levels and adversely affects microstructures and functional properties.
Sakia Sophia Noorzayee   +7 more
wiley   +1 more source

Determination of the laterally homogeneous barrier height of metal/p-InP Schottky barrier diodes

open access: yes, 2009
We have reported a study of a number of metal/p-type InP (Cu, Au, Al, Sn, Pb, Ti, Zn) Schottky barrier diodes (SBDs). Each one diode has been identically prepared on p-InP under vacuum conditions with metal deposition.
Turut, A., Asubay, S., Gullu, O.
core   +1 more source

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