Results 51 to 60 of about 145,393 (311)
The analysis of carrier transport mechanism at the interface of BZOPET-GR Schottky contact
Materials Research ExpressThrough the hydrothermal technique, we successfully deposited boron (B)-doped zinc oxide nanorods (ZnO NRs) onto a polyethylene terephthalate (PET)/graphene (GR) flexible substrate, creating a B-ZnO/PET/GR Schottky contact.
Jianhua Zhang +3 more
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Schottky barrier height at the Au/porous silicon interface
, 1998 The Schottky barrier height at the Au/porous silicon interface has been studied with ballistic electron emission microscopy (BEEM). The porous silicon thin films were prepared by laser ablation.
Ke, M. +3 more
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Arthritis Care &Research, EarlyView.Objective Although the definition of a gout flare is well established, the state of gout flare resolution has not yet been defined. This study aimed to explore patients’ experiences and perceptions of gout flare resolution. Methods Semistructured interviews were conducted with 24 people with gout, guided by open‐ended questions exploring their ...
Sarah Stewart +5 more
wiley +1 more source
IEEE AccessThis study explores that additional Fluorine implantation following $BF_{2}$ increases the barrier height ( $\Phi _{\mathrm {B}}$ ) and reduces the electron effective mass (m ${}^{\ast }$ ) in PMOS structures.
Lee Sai Link +2 more
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, 1999 Copper Schottky diodes on n-type GaN grown by metal-organic chemical vapor deposition were achieved and investigated. Ti/Al was used as the ohmic contact. The copper metal is deposited by the Sputter system.
C. Y. Chang +6 more
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Advanced Engineering Materials, EarlyView.The tribological behavior of 100Cr6 steel spheres textured via Vickers microindentation is evaluated under lubricated sliding by varying both dimple size and density. Fine and dense textures significantly reduce friction across all lubrication regimes, while large dimples increase it.
Farideh Davoodi +3 more
wiley +1 more source
A method to calculate the voltage-current characteristics of [PDF]
Maejo International Journal of Science and Technology, 2009 The voltage-current characteristics of the Schottky barrier diode defined by the diode equation can be obtained by using iteration method and a C++ program.
Rajneesh Talwar
doaj
SCHOTTKY-BARRIER HEIGHT OF CRSI2-SI JUNCTIONS
, 1993 The Schottky barrier height of Cr-Si and CrSi2-Si junctions for both n-and p-type samples has been measured by using I-V, C-V and activation energy techniques in a temperature range of 170-300 K.
AKMAN, N, TURAN, R, Turan, Raşit
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Advanced Engineering Materials, EarlyView.A unified research data management framework for heterogeneous materials data is presented. The system integrates multimodal datasets using ontologies and knowledge graphs, enabling interoperability and FAIR (findable, accessible, interoperable, reusable) data principles. By linking data across scales and workflows, it supports reproducible, Artifitial
Doaa Mohamed +6 more
wiley +1 more source
Analysis of barrier height inhomogeneities in Al-pSnSe Schottky diode
, 2012 The fabrication of Al-pSnSe Schottky diodes and the temperature dependence of I-V characteristics in the temperature range 60
K.D. Patel, C.K. Sumesh
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